dla toshiba
Abstract: 1DL42A TOSHIBA RECTIFIER TOSHIBA DLA
Text: 1DL42A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1DL42A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V • Average Forward Current: IF (AV) = 1.0 A • Very Fast Reverse-Recovery Time: trr = 35 ns (max)
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1DL42A
dla toshiba
1DL42A
TOSHIBA RECTIFIER
TOSHIBA DLA
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dla 001
Abstract: 1DL42A
Text: 1DL42A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1DL42A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V • Average Forward Current: IF (AV) = 1.0 A • Very Fast Reverse-Recovery Time: trr = 35 ns (max)
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1DL42A
dla 001
1DL42A
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1dl42a
Abstract: toshiba marking code transistor TOSHIBA DLA dla toshiba
Text: 1DL42A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1DL42A Switching Mode Power Supply Applications • Repetitive Peak Reverse Voltage: VRRM = 200 V • Average Forward Current: IF (AV) = 1.0 A • Very Fast Reverse-Recovery Time: trr = 35 ns (max)
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1DL42A
1dl42a
toshiba marking code transistor
TOSHIBA DLA
dla toshiba
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Untitled
Abstract: No abstract text available
Text: 1DL42A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1DL42A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V · Average Forward Current: IF (AV) = 1.0 A · Very Fast Reverse-Recovery Time: trr = 35 ns (max)
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1DL42A
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Untitled
Abstract: No abstract text available
Text: 1DL42A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1DL42A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V • Average Forward Current: IF (AV) = 1.0 A • Very Fast Reverse-Recovery Time: trr = 35 ns (max)
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1DL42A
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Untitled
Abstract: No abstract text available
Text: 1DL42A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1DL42A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V • Average Forward Current: IF (AV) = 1.0 A • Very Fast Reverse-Recovery Time: trr = 35 ns (max)
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1DL42A
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Untitled
Abstract: No abstract text available
Text: 1DL42A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1DL42A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V • Average Forward Current: IF (AV) = 1.0 A • Very Fast Reverse-Recovery Time: trr = 35 ns (max)
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1DL42A
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TVR 221
Abstract: PDCR 317 pdcr 318 TNR271K008B TNR102K015B TNR471K010B tnr391k010b TNR181K005B tnr102k015 CPU 314 IFM
Text: [6] 解 説 [6] 解 説 1. 形名付与法 1.1 ツェナーダイオード 例 U 1 Z B 270 −X ① ② ③ ④ ⑤ ⑥ ①…表面実装対応の素子に限り “U” を付ける ②…許容損失値: P ③…定電圧ダイオードを表す 双方向性素子は “ZM”
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S5688
O-220SM
TVR 221
PDCR 317
pdcr 318
TNR271K008B
TNR102K015B
TNR471K010B
tnr391k010b
TNR181K005B
tnr102k015
CPU 314 IFM
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10DL2CZ47A
Abstract: 1DL42A 1GH46 1GWJ43 1NU41 1ZB24 5GWJ2CZ47C S5688G
Text: [ 3 ] ダイオード系統図 [ 3 ] ダイオード系統図 ダイオード 単 代表品種 体 センタタップ パワーツェナー 一般整流ダイオード . S5688G
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1GH46
1NU41
1DL42A
1GWJ43
10DL2CZ47A
S5688G
5GWJ2CZ47C
10DL2CZ47A
1DL42A
1GH46
1GWJ43
1NU41
1ZB24
5GWJ2CZ47C
S5688G
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zener diode 1NU 9F
Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Text: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:
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BCE0001A
BCE0001B
zener diode 1NU 9F
diode 1NU
DLA DIODE TOSHIBA
diode 1NU 7.1
NH5 Diode
Schottky diode TO220 15A 1000V
diode 1NU 5.1
diode 1NU 6F
10lc48
GU 1R5
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induction cooker fault finding diagrams
Abstract: MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200
Text: [5] Handling Precautions 1 Using Toshiba Semiconductors Safely TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when
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Z8115
MIL-HDBK-217E
S57-1
induction cooker fault finding diagrams
MG100J2YS1
nikkei S-200 grease
TOSHIBA IGBT MG50J2YS1
MG50J2YS1
induction cooker st
induction cooker MOSFET IGBT DRIVERS THEORY
nikkei jointal
grease nikkei S-200
NIKKEI JOINTAL 200
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S6A35
Abstract: SF3G42 SF10JZ47 S6785G SF3J42 1R5GU41 S6A37 SCR S6A37 GT8G132 SM3GZ47
Text: [ 9 ] 応用回路例 [ 9 ] 応用回路例 1. スイッチング電源 1 自励式シングルフライバック方式 (RCC) 応用回路例 交 交流入力 二次整流 ダイオード 流 フィルタ + 直流出力 − 差動増幅 回 路 駆動用
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AC100
1JU42
AC200
05NU42
CMS04,
CMS05
5FWJ2CZ47M
5FWJ2C48M
10FWJ2CZ47M
10FWJ2C48M
S6A35
SF3G42
SF10JZ47
S6785G
SF3J42
1R5GU41
S6A37
SCR S6A37
GT8G132
SM3GZ47
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1ZB36
Abstract: 0R1QYZ41 4D4B44 6b4b41 4D4B41 s5502n 0R1NYZ41 30jh11 10L6P44 30L6P43A
Text: [ 10 ] 保守廃止品種一覧表 [ 10 ] 保守廃止品種一覧表 次の品種が保守品種および廃止品種となっております。新規採用は代替推奨品種にてご検討くださいま すようお願いいたします。 2003-3-1 現在
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05D4B48
1G4B42
0R5G4B42
1GH62
0R8DU41
0R8GU41
1J4B42
10BL2C41
10DL2C41A
1JH62
1ZB36
0R1QYZ41
4D4B44
6b4b41
4D4B41
s5502n
0R1NYZ41
30jh11
10L6P44
30L6P43A
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 1DL42 TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 DL42 SWITCHING TYPE POWER SUPPLY APPLICATIONS Vr rm = 200V Repetitive Peak Reverse Voltage Average Forward Current i F(AV) = 1-Oa Very Fast Reverse-Reeovery Time trr = 60ns (Max.)
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1DL42
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DL42
Abstract: 1DL42
Text: TOSHIBA 1DL42 TO SHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 DL42 Unit in mm SW ITCHING TYPE POWER SUPPLY APPLICATIONS V = 200V Repetitive Peak Reverse Voltage Average Forward Current ÏF (AV) = !-Oa Very Fast Reverse-Reeovery Time trr = 60ns (Max.)
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1DL42
DL42
1DL42
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1DL42A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 DL42A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage : V rrm = 200V Average Forward Current : Ijr (AV) = 1-0A Very Fast Reverse-Recovery Time : trr = 35ns (Max.)
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1DL42A
DL42A
961001EAA2'
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL JUNCTION TYPE HIGH EFFICIENCY RECTIFIER HED 1DL42A SWITCHING TYPE POWER SUPPLY APPLICATIONS, • Repetitive Peak Reverse Voltage: . Average Forward Current Unit in m m V r r m =200V : I f (AV)=1.0A • $)- • Very Fast Reverse-Recovery Time: 35ns (max.)
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1DL42A
-30A/ys
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A98V
Abstract: 1DL42A
Text: TOSHIBA 1DL42A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 DL42A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage : Vrrm = 200V Average Forward Current : Ijr (AV)= 1-0A Very Fast Reverse-Reeovery Time : trr = 35ns (Max.)
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1DL42A
961001EAA2'
A98V
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TOSHIBA RECTIFIER
Abstract: No abstract text available
Text: TO SH IBA 1DL42 TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 DL42 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage V rrm = 200 V Average Forward Current IF (A V ) = 1 .0 A Very Fast Reverse-Reeovery Time trr = 60 ns (Max.)
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1DL42
TOSHIBA RECTIFIER
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smd 1gw
Abstract: diode Z47 1ZB36 1ZB20 zener U1DL49 1ZB20 6B4B41 FAST RECOVERY DIODE 200ns 2a 1B4B41 J2C42
Text: a SELECTOR GUIDE The following products are recommended for use in any new circuitry designs. General Purpose Rectifiers —> Peak Repetitive Reverse Voltage 600V 1000V 1S 1887 1S 1888 1S 1830 S5277B S5277G S5277J S5277N D O -41S S5566B S5566G S5566J S5566N
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DO-15
DO-41
DO-201AD
S5277B
S5566B
S5688B
U1BC44
1S1885A
1R5BZ41
smd 1gw
diode Z47
1ZB36
1ZB20 zener
U1DL49
1ZB20
6B4B41
FAST RECOVERY DIODE 200ns 2a
1B4B41
J2C42
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1gw transistor
Abstract: 1j4b41 Toshiba thyristors smd 1gw transistor smd 1zc diode s5688G PFR 215 N equivalent 1J4B41 equivalent
Text: 2. RATINGS AND USAGE 2.1 Maximum Ratings 2.1.3 Current Ratings. 1 Steady state operation current rating. TcMax (or Ta Max)- If(AV) (or Io) , curves show current which can be supplied at steady state. These curves are set so as to make the junction temperature o f elements
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1ZB36
Abstract: 2z47 1J4B41 1B4B42 100L6P43 1Z16 6G4B41 3Z150 30L6P45 10GL2CZ
Text: 1 PART NUMBER INDEX P art No. 05B4B48 05G4B48 05GU4B48 05J4B48 05NH45 05NH46 05NU41 05NU42 0R8GU41 100G6P43 100L6P43 100Q6P43 100U6P43 10B4B41 10DL2C41A 10DL2C48A 10DL2CZ47A 10FL2C48A 10FL2CZ47A 10G4B41 10GL2CZ47A 10GWJ2C48C 10GWJ2CZ47C 10J4B41 10JL2CZ47 10JWJ2CZ47
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15J4B42
160G2G43
160L2G43
160Q2G43
160U2G43
160DL2C41A
16FL2C41A
16DL2CZ47A
16FL2CZ47A
1B4B41
1ZB36
2z47
1J4B41
1B4B42
100L6P43
1Z16
6G4B41
3Z150
30L6P45
10GL2CZ
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DL42A
Abstract: No abstract text available
Text: 1D L 42A TOSHIBA TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 DL42A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage : V r r m = 200 V Average Forward Current : If (AV) = 1.0A Very Fast Reverse-Reeovery Time : trr = 35 ns (Max.)
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DL42A
DL42A
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1gw transistor
Abstract: TSA1000 1J4B41 1G4B41 1B4B41 magnetron power control scr driver ic for rectifier 3 phase scr drive circuit diagram 4G4B41 1B4B42
Text: mAPPLICATION CIRCUIT 1. Igniter . 448 2. Strobe . 449
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SM12JZ47
TLP666G/TLP666J
TIP561G/TLP561J
SM16GZ47/SM16J47
SM16GZ51
/SM16JZ51
SM25GZ51/SM25JZ51
TSS8G48S/TSS8J48S
TSS12G48S/TSS12J48S
TSS16G48S/TSS16J46S
1gw transistor
TSA1000
1J4B41
1G4B41
1B4B41
magnetron power control
scr driver ic for rectifier 3 phase
scr drive circuit diagram
4G4B41
1B4B42
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