1DW 65 Search Results

3KL53

Abstract: 513KL 5KR11
Contextual Info: ΰp                                                                           3'7$:8 3'7&78 3'7$78 3'7&:8 3066 3066 6&

diode 1gw

Abstract: marking DX DIODE dx 400 C1206 1KW marking
Contextual Info: 1.0A Sintered Glass Passivated Ultra Fast Low Profile Rectifier TCDU1DW – TCDU1WW 1.0A Sintered Glass Passivated Ultra Fast Low Profile Rectifier Features • • • • Low power loss, High efficiency For surface mounted applications High current capability

Contextual Info: Sintered Glass Passivated Ultra Fast Recovery Rectifier TCDU1DW – TCDU1WW 1.0A Sintered Glass Passivated Ultra Fast Recovery Rectifier Features • • • • Low power loss, High efficiency For surface mounted applications High current capability High surge capacity

C1206

Abstract: 1DW 65 marking 1gw
Contextual Info: 1.0A Sintered Glass Passivated Standard Rectifier TCDT1DW – TCDT1MW 1.0A Sintered Glass Passivated Standard Rectifier Features • • • • • • • • • • Leadless chip form, no lead damage Lead-free solder joint, no wire bond & lead frame Low profile package

diode 1gw

Abstract: C1206
Contextual Info: 1.0A Sintered Glass Passivated Fast Recovery Rectifier TCDR1DW – TCDR1MW 1.0A Sintered Glass Passivated Fast Recovery Rectifier Features • • • • Low power loss, High efficiency For surface mounted applications High current capability High surge capacity

Contextual Info: Sintered Glass Passivated FAST RECOVERY RECTIFIER TCDR1DW – TCDR1WW 1.0A Sintered Glass Passivated Fast Recovery Rectifier Features • • • • • • Low power loss, High efficiency For surface mounted applications C1206 High current capability High surge capacity

2SA1110

Abstract: 2SC2590
Contextual Info: AOK AOK Semiconductor P rod uct S p ecificatio n 2SA1110 Silicon PNP P o w er Transistors D E S C R IP T IO N • W ith T O - 1 2 6 p a c k a g e • C o m p le m e n t to typ e 2 S C 2 5 9 0 • E x c e lle n t cu rren t lc ch ara c te ris tic s o f fo rw ard

at38w

Contextual Info: MI-JOO Product Highlights The Ml-jOO Family of m iniaturized D C-D C converters is designed fo r M ilitary applications utilizing distributed power architectures. Based on Vicor's second generation fam ily of "zero-current-switching," component-level, D C-D C converters, the

ic 4013 data

Contextual Info: Integrated Device Technology, Inc. SUBSYSTEMS "FLEXI-PAK" FAMILY 32K X 32 128K x 32 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4003 IDT7M4013 FEATURES: DESCRIPTION: • T h e ID T 7 M 4 0 0 3 /4 0 1 3 are high-speed, high-density I m egabit/4 megabit C M O S static RAM modules constructed

lcd wrist watch ic

Abstract: 5V piezo buzzer "buzzer" 5v 100 khz crystal 5V buzzer "Piezo Buzzer" 5v dc operated buzzer 5v Quartz wrist watch ic C1935 20PF an 7591 1.5v watch chip transistor 2F I 36935
Contextual Info: Preliminary Specification_ RCL Semiconductors Ltd. Six Digits Multiplexed LCD Watch CMOS 1C C 1935 With Alarm and Chronograph_ GENERAL DESCRIPTION C1935 is a 6 digits and 6 function watch CMOS LSI circuit with an alarm and chronograph function. It

Contextual Info: PRELIMINARY SYNERGY TTL BICMOS STATIC RAM 6 4 K 1 6 K X 4-BIT S E M IC O N D U C T O R ' ' DESCRIPTION FEATURES • Address access time, tAA: 7/10/12ns max. ■ Chip select access time, tAcs: 4/6/7nsmax. ■ Popular 16K x 4 with common I/O organization

IDT7M135

Abstract: IDT7M134 IDT7M145 IDT7M135S IDT7M144 7M135 R270LC
Contextual Info: Integrated Device Technology, Inc. 8K x 8 16K x 8 CMOS CMOS DUAL-PORT STATIC RAM MODULE MASTER FEATURES: • • ■ • • • • • • • • High-density 64K /128K C M O S Dual-Port RAM modules 16K x 8 (ID T 7 M 1 3 5 ) or 8K x 8 (ID T7M 134)option

Contextual Info: JdfJ 2M X 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7MB4084 In teg rated Dev1ce Technology, Inc. FEATURES: DESCRIPTION: • • • • High density 16 megabit 2M x 8 static RAM module Equivalent to the JEDEC standard for future monolithic Fast access time: 55ns (max.)

Contextual Info: Paradigm PDM4M4120 1M x 32 CMOS Static RAM Module Features 1 High-density 4 megabyte Static RAM module I 1 Low profile 72-pin ZIP Zig-zag In-line vertical Package or 72-pin SIMM (Single In-line Memory Module) ( Fast access time: 20 ns (max.) i J Surface mounted plastic components on an epoxy

100 kilo OHM potentiometer

Abstract: 1 kilo ohm variable resistor RESISTOR 10 KILO OHM AB Electronics potentiometer 1 kilo ohm resistor specifications 20 kilo OHM potentiometer Schematic of 100K digital potentiometer 100 KILO OHM RESISTOR Variable resistor 50K ohm 3 pins Variable resistor 5K ohm
Contextual Info: PRELIMINARY TECHNICAL DATA 2-Channel, 256 Position Digital Potentiometer a AD5207 FEATURES 256 Position, 2-Channel Potentiometer Replacement 10K, 50K, 100KΩ Power Shut Down-Less than 5µA Midscale Preset +2.7 to +5.5 Single-Supply ±2.7V Dual-Supply 3-Wire SPI Compatible Serial Data Input

Z38B

Abstract: 0D51 D27ID ITD014
Contextual Info: ’H Y U N D A I HY52V255B Series _ 3 2 K w B - b l t CM 0 5 5 RAM PRELIMINARY DESCRIPTION The HYB2V256B is ahigh-spsed, low power and 32,758 x B-bits CMOS static RAM fabricated using Hyundai's high pBrformancB twin lub CMOS prnCBss technology. The HY52V256B has a data retention modB that guarantees

Contextual Info: M O SEL VTTEUC MS62256CLL 3 2K x 8 CMOS STATIC RAM Features Descriptions • High-speed - 70/100 ns ■ Low Power dissipation: — 385mW Max Operating — 16.5mW (Max) Standby — 0.55mW (Max) Power-down — 5pA (Max) Iqcdr ■ Fully static operation ■ All inputs and outputs directly TTL compatible

t71B6

Contextual Info: BiCMOS STATIC RAM 64K 8K x 8-BIT IDT71B64 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 8K x 8 organization • JEDEC standard 28-pin DIP and SOJ • Fast access time and cycle time — Commercial: 8/10/12 (max.) • Produced with advanced BiCMOS high-performance

Contextual Info: Preliminary KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Tim e 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 m A (Max.) (C M O S ): 10 mA (Max.) Operating KM616V4002A -12 : 240 mA (Max.)

Contextual Info: Integrated Device T echnology, Inc. SUBSYSTEMS FLEXI-PAK FAMILY 32K x 32 128K x 32 CMOS STATIC RAM MODULES IDT7M4003 IDT7M4013 FEATURES: DESCRIPTION: • The IDT7M 4003/4013 are high-speed, high-density 1 megabit/4 megabit CMOS static RAM modules constructed

Contextual Info: In teg rated Device Technology, Inc. 128K x 16 64K x 16 32K x 16 CMOS DUAL-PORT RAM SHARED MEMORY MODULE IDT7MB6036 IDT7MB6046 IDT7MB6056 DESCRIPTION: FEATURES: • High density 2 m egabit/1 m e g a b it/5 1 2 K -b it C M O S D u a l- T h e S h a re d M e m o ry M o d u le provid es tw o ports with s e p a ­

Contextual Info: HY62V256-0 Series «HYUNDAI 32Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V256 is a high-speed, low power and 32,768 x 8-bits CMOS Static Random Access Memory fabricated using Hyundai's high performance twin tub CMOS process technology. The HY62V256 has a data retention mode that

Contextual Info: KM616V4002B/BL, KM616V4002B/BLI CMOS SRAM 256Kx 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION ~ Fast Access Time 10,12,15* (Max.) - Low Power Dissipation The KM616V4002B/BL is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16

71282

Abstract: MIL-STD-8831
Contextual Info: CMOS STATIC RAMS 256K 64K x 4-BIT Separate Data Inputs and O utputs Integrated Device Technology, Inc. ADVANCE INFORMATION IDT71281S/L IDT71282S/L FEATURES: DESCRIPTION: • • • • The IDT71281/IDT71282 are 262,144-bit high-speed static RAMs organized as 64K x 4. They are fabricated using IDT’s