Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1E5 TRANSISTOR Search Results

    1E5 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1E5 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    if9220

    Abstract: TC227 irfu9220 IRFR9220 TB334
    Text: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching


    Original     		PDF IRFR9220, IRFU9220 TA17502. if9220 TC227 irfu9220 IRFR9220 TB334

    HRF3205 equivalent

    Abstract: HRF3205 equivalent mosfet number hrf3205 data sheet mosfet HRF3205 hrf3205 data hrf3205 datasheet HRF3205S HRF3205ST TB334 mosfet HRF3205
    Text: HRF3205, HRF3205S Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF HRF3205, HRF3205S HRF3205S HRF3205 53e-5 38e-3 00e-3 HRF3205 equivalent HRF3205 equivalent mosfet number hrf3205 data sheet mosfet HRF3205 hrf3205 data hrf3205 datasheet HRF3205ST TB334 mosfet HRF3205

    tt 4458

    Abstract: mosfet 4456 TB334 AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 N-CHANNEL 45A TO-247 POWER MOSFET
    Text: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs 3574.4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF RFG45N06, RFP45N06, RF1S45N06SM TA49028. tt 4458 mosfet 4456 TB334 AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 N-CHANNEL 45A TO-247 POWER MOSFET

    tt 4458

    Abstract: AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 TB334 mosfet 4456
    Text: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs 3574.4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF RFG45N06, RFP45N06, RF1S45N06SM TA49028. tt 4458 AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 TB334 mosfet 4456

    fd3055

    Abstract: No abstract text available
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF RFD3055, RFD3055SM, RFP3055 TA49082. fd3055

    TC227

    Abstract: irfu9220 IF9220 IRFR9220 TB334
    Text: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching


    Original     		PDF IRFR9220, IRFU9220 TA17502. TC227 irfu9220 IF9220 IRFR9220 TB334

    HRF3205 equivalent

    Abstract: data sheet mosfet HRF3205 HRF3205 equivalent mosfet number HRF3205 HRF3205S HRF3205ST TB334 mosfet HRF3205
    Text: HRF3205, HRF3205S Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF HRF3205, HRF3205S HRF3205 equivalent data sheet mosfet HRF3205 HRF3205 equivalent mosfet number HRF3205 HRF3205S HRF3205ST TB334 mosfet HRF3205

    AN9321

    Abstract: AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 TB334 F1S45N06
    Text: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet January 2002 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF RFG45N06, RFP45N06, RF1S45N06SM TA49028. AN9321 AN9322 RF1S45N06SM RF1S45N06SM9A RFG45N06 RFP45N06 TB334 F1S45N06

    Untitled

    Abstract: No abstract text available
    Text: KSC5502D / KSC5502DT NPN Triple Diffused Planar Silicon Transistor • • • • • • 4 D-PAK Features Equivalent Circuit High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application


    Original     		PDF KSC5502D KSC5502DT O-220 KSC5502DTM C5502D O-252 KSC5502DTTU O-220

    FD3055

    Abstract: IS433 Fp3055 RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF RFD3055, RFD3055SM, RFP3055 TA49082. FD3055 IS433 Fp3055 RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A

    Untitled

    Abstract: No abstract text available
    Text: RFG45N06, RFP45N06, RF1S45N06SM Data Sheet Title FG4 06, P45 6, 1S4 06S bt A, V, 28 m, anwer OSTs utho July 1999 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF RFG45N06, RFP45N06, RF1S45N06SM

    TC227

    Abstract: No abstract text available
    Text: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching


    Original     		PDF IRFR9220, IRFU9220 TA17502. TC227

    FD3055

    Abstract: Fp3055
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet Title FD3 5, D30 SM, P30 bt A, V, 50 m, anwer OSTs utho eyrds terrpoon, July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF RFD3055, RFD3055SM, RFP3055 FD3055 Fp3055

    AN9321

    Abstract: AN9322 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334
    Text: RFD3N08L, RFD3N08LSM Data Sheet 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features • 3A, 80V The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving


    Original     		PDF RFD3N08L, RFD3N08LSM RFD3N08L RFD3N08LSM AN9321 AN9322 RFD3N08LSM9A TB334

    AN9322

    Abstract: AN9321 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334
    Text: RFD3N08L, RFD3N08LSM Data Sheet Title FD3 8L, D3 8LS bt A, V, 00 m, gic vel, Cha el wer OSTs utho July 1999 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors


    Original     		PDF RFD3N08L, RFD3N08LSM 175oC TB334 TA09922. RFD3N08L O-251AA O-252AA F3N08L AN9322 AN9321 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334

    RFP70N06

    Abstract: TA49007 RFG70N06 fp70n06 70n06 4772 DIODE TC1501
    Text: ill H R F G 70N 06 F P 7 0 N O fi a r r is S E M I C O N D U C T O R ^ N-Channel Enhancement-Mode Power Field-Effect Transistors August 1992 Features • Packages TO-22QAB TOP VIEW 70A,60V • r DS on = 0.014£2 • UIS Rating Curve (Single Pulse) DRAIN (FLANGE)


    OCR Scan     		PDF O-22QAB O-247 RFG70N06 RFP70N06 11e-12 91e-3 26e-3 07e-6 12e-9 18e-8) TA49007 fp70n06 70n06 4772 DIODE TC1501

    AN7254

    Abstract: RF650N06 RFP50N05 RFP50N06 AN-7254 RFG50N05 mosfat 24v mosfat RFP70N06 34069
    Text: 3 } H a r r is May 1992 R FP 50N 05 R FG 50N 05 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package TO-220AB TOP VIEW • 50 A , 5 0 V • rDS(on) = 0 .0 2 2 0 DRAIN (FLANGE) • UIS SO A Rating Curve (Single Pulse) u • SO A is P ow er-D issipation Lim ited


    OCR Scan     		PDF RFP50N05 RFG50N05 0-022O 11e-12 91e-3TRS1 26e-3 07e-6 12e-9 AN7254 RF650N06 RFP50N06 AN-7254 mosfat 24v mosfat RFP70N06 34069

    RFA100N05E

    Abstract: GC200 100N05E ff048
    Text: ffl h a r r is J a n u a ry 1 9 9 3 RFA 100N05E N-Channel Enhancem ent-M ode Power Field-Effect Transistor MegaFET Package Features • 100A, 50V • rDS(on) = 0 -0 0 8 fi D R A IN • Electrostatic Discharge Rated • UIS SOA Rating Curve (Single Pulse)


    OCR Scan     		PDF 100N05E RFA100N05E 23e-12 55e-9 1e-030 14e-9) 37e-5) GC200 100N05E ff048

    Untitled

    Abstract: No abstract text available
    Text: Hormis S RFD3N08L, RFD3N08LSM Semiconductor y 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs juiy 1998 Features Description • 3A, 80V • UIS Rating Curve The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors


    OCR Scan     		PDF RFD3N08L, RFD3N08LSM RFD3N08L RFD3N08LSM 19e-4 55e-2 58e-5) 19e-3 12e-6)

    Untitled

    Abstract: No abstract text available
    Text: HRF3205, HRF3205S Semiconductor June 1999 Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		PDF HRF3205, HRF3205S HRF3205 53e-5 38e-3 00e-3 50e-2 33e-1

    T0202

    Abstract: 160 e7 D41E1 D41E7
    Text: 1989963 CENTRAL SEMICONDUCTOR c entral 9 2D 00380 D ~T'3 3~ DE j n f m b g semiconductor — i~7 □ □ □ □ BflO 3 D'Il El DA1E5 D^I E7 H PNP SILICON POWER TRANS I STOR • JEDEC T0-202 CASE (EBC DESCRIPTION The CENTRAL SEMICONDUCTOR D*»1E series types are silicon PNP transistors manufactured


    OCR Scan     		PDF T0-202 D41E7 T0202 160 e7 D41E1 D41E7

    RFG75N05E

    Abstract: No abstract text available
    Text: RFG75N05E Semiconductor April 1999 Data Sheet 75A, 50 V, 0.008 Ohm, N-Channel Power MOSFET File Number 2275.4 Features • 75A, 50V These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		PDF RFG75N05E 008i2 23e-12 249e-3 55e-9 1e-30 14e-9) 17e-6) 37e-5) 78e-3 RFG75N05E

    160 e7

    Abstract: D41E1 D41E7
    Text: 1989963 CENTRAL SEMICONDUCTOR c entral 9 2D 00380 D ~T'3 3~ DE j n f m b g semiconductor — i~7 □ □ □ □ BflO 3 D'Il El DA1E5 D^I E7 H PNP SILICON POWER TRANS I STOR • JEDEC T0-202 CASE (EBC DESCRIPTION The CENTRAL SEMICONDUCTOR D*»1E series types are silicon PNP transistors manufactured


    OCR Scan     		PDF T0-202 D41E1 D41E7 l00mA 160 e7 D41E7

    16N05L

    Abstract: RFD16N05L 16N05
    Text: m H a rris uj s e m ic o n d u c to r June 19 9 2 R F D 16N 05 L R F D 16 N 0 5 L S M N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package TO-251 AA TOP VIEW • 1 6 A .5 0 V • r DS(ON) = 0.047Q • UIS SOA Rating Curves (Single Pulse)


    OCR Scan     		PDF O-251 O-252AA 22E-10 1e-30 11E-9 38E-9 0E-12 16N05L RFD16N05L 16N05