Net to Net Technologies
Abstract: ip dslam GR-1089-CORE GR-63-CORE RJ21
Text: ADSL MiniDSLAM AMD8000-12 AMD8000-12 ADSL MiniDSLAM Deliver Full Rate and G.lite ADSL from the Remote Terminal Overview Features Net to Net Technologies’ ADSL MiniDSLAM is the industry’s first Utilizes Net to Net’s IPacket Architecture IP-based remote access DSLAM that provides both Full Rate and
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AMD8000-12
AMD8000-12
GR-63-CORE
GR-1089-CORE
CSA/C108
EN55022
EN55024
UL1950
Net to Net Technologies
ip dslam
GR-1089-CORE
RJ21
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IC 7489 DATASHEET
Abstract: Diode B93 zener 7489 truth table pin diagram of ic 7489
Text: September 3rd, 2012 Automotive Grade AUIRS2332J 3-PHASE BRIDGE DRIVER IC Features • • • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage – dV/dt immune
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AUIRS2332J
250mA
500mA
IC 7489 DATASHEET
Diode B93 zener
7489 truth table
pin diagram of ic 7489
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BSV52L
Abstract: No abstract text available
Text: 1EE D M A X IM U M RATINGS * Value U nit VCEO 12 Vdc VCBO 20 Vdc ic 100 mAdc Symbol Rating Coliector-Emitter Voltage Collector-Base Voltage Collector Current — Continuous h I b3fc.7Z5M 0 0 f l 5 ^ M 5 MOTOROLA SC XSTRS/R BSV52L Characteristic Symbol Max
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BSV52L
BSV52L
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PDF
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MMBR2060
Abstract: No abstract text available
Text: 1EE D § b3b?254 □□07200 1 | MQTQRCLA SC MOTOROLA XSTRS/R F T - Z H -l _ SEMICONDUCTOR TECHNICAL DATA MMBR2060 The RF Line N P N Silicon High Frequency Transistor . designed primarily for use in high-gain, low-noise amplifier, oscillator and mixer applications. Packaged for thick or thin-film circuits using surface
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MMBR2060
MMBR2060
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Untitled
Abstract: No abstract text available
Text: 1EE D I M A X I M U M R A T IN G S Sym bol Value Unit Collector-Emitter Voltage VCEO 20 Vdc Collector-Base Voltage VCBO 30 Vdc Vebo 5.0 Vdc Rating Emitter-Base Voltage ic Collector Current — Continuous MOTOROLA SC mAdc . 100 Sym bol M ax PD 225 mW 1.8 m w rc
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BCW31L
BCW33L
OT-23
O-236AB)
BCW33L
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2n5179 motorola
Abstract: MMBR5179
Text: 1EE D I I MOTOROLA SC XSTRS/R T - 3 i- n F MOTOROLA S E M IC O N D U C T O R h h h b TECHNICAL DATA The RF Line MMBR5179 Die Source S am e as 2N5179 NPN Silicon High Frequency Transistor . . . designed for small-signal amplification at frequencies to 500 MHz. Specif
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MMBR5179
2N5179
2n5179 motorola
MMBR5179
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2sb1303
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR ' CORP 1EE II | 7 1 1 7 0 71 1 O M S im T -il' £>l S S 2 S B 1 2 3 1 / 2 S D 1 841 S S 2 S B 1 3 2 5 /2 S D 1 999 Complementary Pair Silicon Transistors Complementary Pair Silicon Transistors Low Saturation Voltage Amp Applications Motor Driver Applications
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2SB1231,
2SB1232,
2SB1303,
2SB1323,
2SB1325,
2SB1346,
2SC4002,
2SC4003,
2SD1841,
2SD1842,
2sb1303
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2SD1401
Abstract: 2042A 5033K
Text: SANYO SEMI CONDUCTOR CORP ÍSE D I 7 cH 7 a 7 b UDOSQflL, T' 33' 3 2SD1401 NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications 1268B Features: • High breakdown voltage and high reliability • High switching speed
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2SD1401
1268B
1S-126A
IS-20MA
IS-313
IS-313A
2SD1401
2042A
5033K
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b1181
Abstract: sj 2025 2SA1210 JIS B1181 sj 2038 2SC2912
Text: SANYO SEMICONDUCTOR CORP 12E D I T - Q 1 - 3 7 * ^ 7 Q7b Q003775 0 l \ " 2SA1210 Epitaxial P la n a r S ilic o n T ra n sisto rs P N P/npn 2009A High Voltage S w itch in g , A F 1 5 0 W Predriver A p p lications 2SC2912 780C Features • A d o p tio n o f F B E T process
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2SA1210
B1181
B1252
sj 2025
2SA1210
JIS B1181
sj 2038
2SC2912
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 571 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R ^ lk f l, R2=1kfl Ordering Code Pin Configuration XXs UPON INQUIRY 1= B Package II CO O Marking BCR 571 LU II
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OT-23
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2SA1210
Abstract: 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor
Text: SA N YO SEMICONDUCTOR CORP 12 E D I T 2SA1210 1 - 3 l \ PN P / npn Epitaxial P la n a r S ilic o n Transistors 2009A 2SC2912 - Q 7 * ^ 7 Q7b Q003775 0 High Voltage Switching, A F 150W Predriver Applications 780C Features • Adoption of F B E T process • High breakdown voltage
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2SA1210
0DGB752
2SA1210
2SC2912
FP 1018
JIS G3141
DDD3710
BC PNP Transistor
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2SC3173
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 12E » I 7 CH 7 0 7 L , 0004311 7 T ' 53-11 2SC3173 NPN Epitaxial Planar Silicon Transistor 201OA C R T Display Horizontal Deflection Output Applications 1309B Features: ’ High switching speed • Especially suited for use in high-definition CRT display Vcc=6 to 12V
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H707L,
2SC3173
201OA
1309B
IS-20MA
IS-313
IS-313A
2SC3173
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TRANSISTOR FS 2025
Abstract: SILICON TRANSISTOR FS 2025 2SK775 JIS G3141 DDD3710 2052A DS-17 SANYO AKO 450
Text: SANYO SEMICONDUCTOR ISE D I CORP ? c]cì?Q7t. □aDSHS'ì □ | “~ r - 3 f - u 2SK775 Ñ -Channel M O S Silicon Field-Effect Transistor Very High Speed Switching Applications 2559 Features . Low ON resistance, very high-speed switching Absolute M a x i m Ratings at Ta=25°C
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2SK775
0DGB752
TRANSISTOR FS 2025
SILICON TRANSISTOR FS 2025
2SK775
JIS G3141
DDD3710
2052A
DS-17 SANYO
AKO 450
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR ÍS E CORP ^ BU508D r j 7m 07\n r ' 3 S NPN Triple Diffused Planar Silicon Transistor 2022 Horizontal Output Applications Absolute Maxlaua Batinga at Ta=25°C Collector to Base Voltage vCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage
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BU508D
IS-20MA
IS-313
IS-313A
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Untitled
Abstract: No abstract text available
Text: sanyo s e m ic o n d u c t o r corp ~ 1 2 E D | 7 cH 7 Q 7 L i OOOSOb'J r ' 3 3 - I S NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications with Damper Diode 1222C Features: • High Breakdown Voltage and High Reliability.
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1222C
1S-126A
IS-20MA
IS-313
IS-313A
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b1181
Abstract: JIS B1181 2SK283 TO-220AD MARKING 313B JIS G3141 DDD3710 w19 transistor ss 7941 .2t transistor
Text: SANYO SEMICONDUCTOR CORP IS E D I 7 cH 7 []7 t, □ 0DS3t.2 7 | “ T - 3 S ' - } 2SK283 # N-Channel Junction Silicon Field-Effect Transistor High Voltage Driver Applications 794E FEA TU RES * Because it is encapsulated in an ultra compact package, compact and low-profile sets can be designed.
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-100/xA
B1181
B1252
JIS B1181
2SK283
TO-220AD
MARKING 313B
JIS G3141
DDD3710
w19 transistor
ss 7941
.2t transistor
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2SK283
Abstract: STK282-170-E sanyo DDD3710 ss 7941 1501T
Text: S ANYO SEMICONDUCTOR CORP IS E D I 7 cH 7 []7 t, T - 3 S ' - } 2SK283 # N -C h a n n e l J u n c tio n S ilico n F ie ld -E ffe c t T ran sistor High Voltage Driver Applications 794E FEA TU RES * Because it is encapsulated in an ultra compact package, compact and low-profile sets can be designed.
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-100/xA
0DGB752
2SK283
STK282-170-E sanyo
DDD3710
ss 7941
1501T
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3SK167
Abstract: transistor Bc 313 NF 28
Text: SANYO SEMICONDUCTOR 1SE CORP D I 7 cn ? 0 7 b 0 D D S 47 2 r-3 1- 3SK167 2046 G a A s Dual Gate M E S Silico n Field-Effect Transistor UHF Amp, Mixer Applications 1908A features . High power gain and small noise resistance . Small input/output capacitance, reverse transfer capacitance
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3SK167
IS-126
IS-20MA
IS-313
IS-313A
3SK167
transistor Bc 313 NF 28
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2SK376
Abstract: DDD3710 VLN 2003a
Text: SANYO SEMICONDUCTOR CORP 1B E » 1 i m U l h 0D0S3Û0 2SK376 N-Channel Junction Silicon Field-Effect Transistor 2037 1432A Capacitor Microphone Impedance Conversion Applications Features . Especially suited for use in audio, telephone capacitor microphones.
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0D053Ã
2SK376
2SK376
0DGB752
DDD3710
VLN 2003a
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Sanyo D313
Abstract: transistor D313 TRANSISTOR B507 2SD313 D314 transistor d313 transistor SD313 D313 for amplifier TRANSISTOR NPN D313 D313 amplifier
Text: SANYO SEMICONDUCTOR CORP 12 E D | 7Ti7D7Li 0004ÛÛ7 S | T-3 2SD313, NPN/pnp Triple Diffused Planar • 3 1 4 201 oA 2SB507, 508 3 - Silicon Transistors 2012 Low Frequency Power Amp Applications 396E .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively.
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2SB507,
2SB507
2SB508
2SD313
2SD314
2SB508,
2SD314,
Sanyo D313
transistor D313
TRANSISTOR B507
D314 transistor
d313 transistor
SD313
D313 for amplifier
TRANSISTOR NPN D313
D313 amplifier
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Untitled
Abstract: No abstract text available
Text: M O TO RO LA Order this document by MBR20200CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Dual Schottky Rectifier MBR20200CT . . . using Schottky Barrier technology with a platinum barrier metal. This state-of-the-art device is designed for use in high frequency switching power
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MBR20200CT/D
MBR20200CT
3b7255
-220AB)
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Untitled
Abstract: No abstract text available
Text: Metallized Polypropylene Capacitor for Motor Running & Lighting Ballast ECWFJfc ECWF Series LTt&ft;? A compact, light-weight capacitor designed for use in motor running and in electrical equipment such as lighting, etc. Non-inductive type using metallized polyplopylene
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29705JA
29805JA
29905JA(
29106JA(
F33105JA
330VAC,
33205JA
33305JA
33405JA
33505JA
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Untitled
Abstract: No abstract text available
Text: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7W240FU Inverted, 3-State Outputs The TC7W240FU is a high speed C2MOS Dual Bus Buffer fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation.
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TC7W240FU
TC7W240FU
0027Sb0
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NEC D765
Abstract: 8272 floppy disk controller block diagram of 8272 floppy disk controller 82C226 8272A floppy disk controller block diagram NEC uPA 63 H floppy disk controller 8272 CHIPS TECHNOLOGIES MR 250-2.-5 NS16550
Text: CH I P S . im a £ TE C H N O L O G I E S INC 12E D | SO'ìflllb 0 0 0 1501 b | u u u m .,u iu C H I ir ^ S -T -5 2 -3 3 -D 5 82C607 M ultifunction Controller Single Chip UART and Analog Data Separator
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T-52-33-D5
82C607
NS16550
precompens82C607
NEC D765
8272 floppy disk controller
block diagram of 8272 floppy disk controller
82C226
8272A floppy disk controller block diagram
NEC uPA 63 H
floppy disk controller 8272
CHIPS TECHNOLOGIES
MR 250-2.-5
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