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    Toshiba America Electronic Components 2SK3760M

    Power Field-Effect Transistor, 3.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SK3760M 1,245
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    Toshiba America Electronic Components 2SK3767Q

    Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SK3767Q 800
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    2SK376 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK376 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK376 Unknown FET Data Book Scan PDF
    2SK376 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SK376 Sanyo Semiconductor N-Channel Junction Silicon FET, Capacitance Microphone Impedance Conversion Apps Scan PDF
    2SK3760 Toshiba MOSFET 2SK/2SJ Series Original PDF
    2SK3761 Toshiba MOSFET 2SK/2SJ Series Original PDF
    2SK3762 Toshiba MOSFET 2SK/2SJ Series Original PDF
    2SK3763 Toshiba Field Effect Transistor Silicon N Channel MOS Type ( pi -MOSIV) Original PDF
    2SK3766 Toshiba Field Effect Transistor Silicon N-Channel MOS Type Original PDF
    2SK3767 Toshiba Silicon N Channel MOS Type Switching Regulator Applications Original PDF
    2SK3767 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3767(Q,M) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 2A TO-220SIS Original PDF
    2SK3769-01MR Fuji Electric N-Channel Silicon Power MOSFET Original PDF
    2SK376J Sanyo Semiconductor N-Channel Junction Silicon FET, Capacitance Microphone Impedance Conversion Apps Scan PDF
    2SK376K Sanyo Semiconductor N-Channel Junction Silicon FET, Capacitance Microphone Impedance Conversion Apps Scan PDF
    2SK376L Sanyo Semiconductor N-Channel Junction Silicon FET, Capacitance Microphone Impedance Conversion Apps Scan PDF
    2SK376M Sanyo Semiconductor N-Channel Junction Silicon FET, Capacitance Microphone Impedance Conversion Apps Scan PDF

    2SK376 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3766

    Abstract: No abstract text available
    Text: 2SK3766 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK3766 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 0.65 S (標準)


    Original     		PDF 2SK3766 SC-67 2-10U1B 2SK3766

    Untitled

    Abstract: No abstract text available
    Text: 2SK3769-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Digital Audio Amp. DC-DC converters


    Original     		PDF 2SK3769-01MR O-220F

    K3761

    Abstract: 2SK3761 DS1015
    Text: 2SK3761 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSⅥ 2SK3761 unit：ｍｍ Switching Regulator Applications 4.7max 4.7 max 10.5 10.5 max max 3.84±0.2 1.3 15.6 max 15.6 max. 13.4 min 13.4 min. Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SK3761 K3761 2SK3761 DS1015

    Untitled

    Abstract: No abstract text available
    Text: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3 (typ.) High forward transfer admittance: |Yfs| = 1.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3767

    K3763

    Abstract: 2SK3763 MARKING toshiba 133 2SK37
    Text: 2SK3763 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3763 unit：ｍｍ Switching Regulator Applications 4.7max 4.7 max 10.5 10.5max max 3.84±0.2 1.3 3.84±0.2 Drain-source voltage 6.6 max. 15.6 max 15.6 max. Symbol Rating Unit


    Original     		PDF 2SK3763 K3763 2SK3763 MARKING toshiba 133 2SK37

    transistor k3767

    Abstract: K3767 2sk3767 equivalent k3767 2SK3767 equivalent
    Text: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3767 transistor k3767 K3767 2sk3767 equivalent k3767 2SK3767 equivalent

    2SK3762

    Abstract: K3762 MARKING toshiba 133
    Text: 2SK3762 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSⅣ 2SK3762 unit：ｍｍ Switching Regulator Applications 4.7max 4.7 max 10.5 10.5 max max 3.84±0.2 1.3 15.6 max 15.6 max. 1.5 max 1.5 max 3.93.9max max. 13.4 13.4 min min. Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK3762 2SK3762 K3762 MARKING toshiba 133

    transistor k3767

    Abstract: K3767 2SK3767
    Text: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3767 transistor k3767 K3767 2SK3767

    2SK3760

    Abstract: No abstract text available
    Text: 2SK3760 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSⅥ 2SK3760 unit：ｍｍ Switching Regulator Applications 4.7max 4.7 max 10.5 10.5max max 3.84±0.2 1.3 3.84±0.2 6.6 max. 15.6 max 15.6 max. 1.5 1.5 max max 3.9 max. 13.4 13.4min min.


    Original     		PDF 2SK3760 2SK3760

    k3767

    Abstract: No abstract text available
    Text: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3 Ω (typ.) High forward transfer admittance: |Yfs| = 1.6 S (typ.)


    Original     		PDF 2SK3767 k3767

    120V DC to DC Converter 10A

    Abstract: 2SK3769-01MR
    Text: 2SK3769-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original     		PDF 2SK3769-01MR O-220F 120V DC to DC Converter 10A 2SK3769-01MR

    Untitled

    Abstract: No abstract text available
    Text: 2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3766 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3766

    k3767

    Abstract: transistor k3767 2SK3767 equivalent k3767 Silicon N Channel MOS Type Switching Regulator 2SK3767 equivalent
    Text: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3 Ω (typ.) High forward transfer admittance: |Yfs| = 1.6 S (typ.)


    Original     		PDF 2SK3767 k3767 transistor k3767 2SK3767 equivalent k3767 Silicon N Channel MOS Type Switching Regulator 2SK3767 equivalent

    2SK3766

    Abstract: 2-10U1B JEITA SC-67
    Text: 2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3766 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)


    Original     		PDF 2SK3766 2SK3766 2-10U1B JEITA SC-67

    transistor k3767

    Abstract: K3767 2sk3767
    Text: 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3767 transistor k3767 K3767 2sk3767

    2SK3766

    Abstract: No abstract text available
    Text: 2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3766 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3766 2SK3766

    k3767

    Abstract: 2SK3767 equivalent k3767
    Text: 2SK3767 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK3767 ○ スイッチングレギュレータ用 単位: mm : RDS ( ON ) = 3.3 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。


    Original     		PDF 2SK3767 SC-67 2-10U1B k3767 2SK3767 equivalent k3767

    2SK3766

    Abstract: No abstract text available
    Text: 2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3766 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)


    Original     		PDF 2SK3766 2SK3766

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


    Original     		PDF BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


    Original     		PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    JIS B1181

    Abstract: d 2037 transistor capacitor 0.22mA TRANSISTOR b1181 FOR TRANSISTOR BC 149 B 2042A 2SK376 DDD3710 B1181
    Text: SANYO SEMICONDUCTOR CORP 2SK376 1BE » 1 I ’ N-Channel Junction Silicon Field-Effect Transistor 2037 1432A i m U l h 0D0S3fl0 I Capacitor Microphone Impedance Conversion Applications Features . Especially suited for use in audio, telephone capacitor microphones.


    OCR Scan     		PDF 0D053Ã 2SK376 2SK376 B1181 B1252 JIS B1181 d 2037 transistor capacitor 0.22mA TRANSISTOR b1181 FOR TRANSISTOR BC 149 B 2042A DDD3710

    2SK376

    Abstract: DDD3710 VLN 2003a
    Text: SANYO SEMICONDUCTOR CORP 1B E » 1 i m U l h 0D0S3Û0 2SK376 N-Channel Junction Silicon Field-Effect Transistor 2037 1432A Capacitor Microphone Impedance Conversion Applications Features . Especially suited for use in audio, telephone capacitor microphones.


    OCR Scan     		PDF 0D053Ã 2SK376 2SK376 0DGB752 DDD3710 VLN 2003a