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    K3767 Search Results

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    K3767 Price and Stock

    TE Connectivity EK3767-000

    Standard Circular Connector RECP ASSY
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    Mouser Electronics EK3767-000
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    Vishay Intertechnologies CRCW06032K37FKEA

    Thick Film Resistors - SMD 1/10watt 2.37Kohms 1%
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    TTI CRCW06032K37FKEA Reel 15,000 5,000
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    Amphenol Corporation 88-565867-35H

    Circular MIL Spec Connector 79P Size 26 Straight Plug Socket
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    TTI 88-565867-35H Each 986 1
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    Vishay Intertechnologies CRCW2010332KFKEF

    Thick Film Resistors - SMD 3/4watt 332Kohms 1%
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    TTI CRCW2010332KFKEF Reel 4,000
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    Toshiba America Electronic Components 2SK3767Q

    Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA 2SK3767Q 800
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    K3767 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: K3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSVI K3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3 (typ.) High forward transfer admittance: |Yfs| = 1.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3767

    transistor k3767

    Abstract: K3767 2sk3767 equivalent k3767 2SK3767 equivalent
    Text: K3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3767 transistor k3767 K3767 2sk3767 equivalent k3767 2SK3767 equivalent

    transistor k3767

    Abstract: K3767 2SK3767
    Text: K3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3767 transistor k3767 K3767 2SK3767

    k3767

    Abstract: No abstract text available
    Text: K3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3 Ω (typ.) High forward transfer admittance: |Yfs| = 1.6 S (typ.)


    Original     		PDF 2SK3767 k3767

    k3767

    Abstract: transistor k3767 2SK3767 equivalent k3767 Silicon N Channel MOS Type Switching Regulator 2SK3767 equivalent
    Text: K3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3 Ω (typ.) High forward transfer admittance: |Yfs| = 1.6 S (typ.)


    Original     		PDF 2SK3767 k3767 transistor k3767 2SK3767 equivalent k3767 Silicon N Channel MOS Type Switching Regulator 2SK3767 equivalent

    K3767

    Abstract: 2SK3767 equivalent k3767 C5016
    Text: K3767 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ K3767 ○ スイッチングレギュレータ用 単位: mm : RDS ( ON ) = 3.3 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。


    Original     		PDF 2SK3767 SC-67 2-10U1B K3767 2SK3767 equivalent k3767 C5016

    transistor k3767

    Abstract: K3767 2sk3767
    Text: K3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3767 transistor k3767 K3767 2sk3767

    k3767

    Abstract: 2SK3767 equivalent k3767
    Text: K3767 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ K3767 ○ スイッチングレギュレータ用 単位: mm : RDS ( ON ) = 3.3 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。


    Original     		PDF 2SK3767 SC-67 2-10U1B k3767 2SK3767 equivalent k3767