Contextual Info: SILICON DIFFUSED TYPE RECTIFIER 1JU42 HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY . Average Forward Current : If (AV)=1.0A . Repetitive Peak Reverse Voltage : V r r h =600V . Reverse Recovery Tine : trr=100ns(Max.) . Plastic Mold Type. MAXIMUM RATINGS

1JU42

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com 1JU42 IATF 0113686 SGS TH07/1033 HIGH EFFICIENT RECTIFIER M1A PRV : 600 Volts Io : 1.0 Ampere * * * * * * 1.00 25.4 MIN. 0.085(2.16) 0.075(1.91) FEATURES : Glass passivated junction chip High reliability Low reverse current

1JU42

Contextual Info: 1JU42 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1JU42 HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY z Average Forward Current Unit: mm : IF (AV) = 1.0A z Repetitive Peak Reverse Voltage : VRRM = 600V z Reverse Recovery Time : trr = 100ns (Max) z Plastic Mold Type

Contextual Info: TOSHIBA 1JU42 TOSHIBA RECTIFIER 1 SILICON DIFFUSED TYPE I 11 á 1 HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY • Average Forward Current !f (AV) = 1-oa • Repetitive Peak Reverse Voltage VRRM = 400V • Reverse Recovery Time trr = 100ns (Max.) •

1JU42

Abstract: JU TOSHIBA
Contextual Info: 1JU42 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1JU42 HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY Unit: mm Average Forward Current : IF (AV) = 1.0A Repetitive Peak Reverse Voltage : VRRM = 600V Reverse Recovery Time : trr = 100ns (Max) Plastic Mold Type

Contextual Info: 1JU42 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1JU42 HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY z Average Forward Current Unit: mm : IF (AV) = 1.0A z Repetitive Peak Reverse Voltage : VRRM = 600V z Reverse Recovery Time : trr = 100ns (Max) z Plastic Mold Type

Contextual Info: 1JU42 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1JU42 Unit: mm HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY l Average Forward Current : IF (AV) = 1.0A l Repetitive Peak Reverse Voltage : VRRM = 600V l Reverse Recovery Time : trr = 100ns (Max) l Plastic Mold Type.

1JU42

Contextual Info: TH97/10561QM 1JU42 TW00/17276EM IATF 0060636 SGS TH07/1033 HIGH EFFICIENT RECTIFIER M1A PRV : 600 Volts Io : 1.0 Ampere * * * * * * 1.00 25.4 MIN. 0.085(2.16) 0.075(1.91) FEATURES : Glass passivated junction chip High reliability Low reverse current Low forward voltage drop

1JU42

Abstract: TOSHIBA RECTIFIER
Contextual Info: 1JU42 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1JU42 Unit: mm HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY Average Forward Current : IF (AV) = 1.0A Repetitive Peak Reverse Voltage : VRRM = 600V Reverse Recovery Time : trr = 100ns (Max) Plastic Mold Type.

Contextual Info: 1JU42 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1JU42 HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY Unit: mm z Average Forward Current : IF (AV) = 1.0A z Repetitive Peak Reverse Voltage : VRRM = 600V z Reverse Recovery Time : trr = 100ns (Max) z Plastic Mold Type

Contextual Info: TO SHIBA 1JU42 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1JU42 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY • • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time Plastic Mold Type. m . ! f (AV) = 1'0A v RRM = 40° v

1JU42

Contextual Info: TOSHIBA 1JU42 1 J U4 2 TOSHIBA RECTIFIER HIGH SPEED RECTIFIER APPLICATIONS SILICON DIFFUSED TYPE FAST RECOVERY • Average Forward Current • Repetitive Peak Reverse Voltage • Reverse Recovery Time • Plastic Mold Type. ÏF (AV) —1-OA V r r m = 400V

smd 1gw

Abstract: diode Z47 1ZB36 1ZB20 zener U1DL49 1ZB20 6B4B41 FAST RECOVERY DIODE 200ns 2a 1B4B41 J2C42
Contextual Info: a SELECTOR GUIDE The following products are recommended for use in any new circuitry designs. General Purpose Rectifiers —> Peak Repetitive Reverse Voltage 600V 1000V 1S 1887 1S 1888 1S 1830 S5277B S5277G S5277J S5277N D O -41S S5566B S5566G S5566J S5566N

1ZB36

Abstract: 2z47 1J4B41 1B4B42 100L6P43 1Z16 6G4B41 3Z150 30L6P45 10GL2CZ
Contextual Info: 1 PART NUMBER INDEX P art No. 05B4B48 05G4B48 05GU4B48 05J4B48 05NH45 05NH46 05NU41 05NU42 0R8GU41 100G6P43 100L6P43 100Q6P43 100U6P43 10B4B41 10DL2C41A 10DL2C48A 10DL2CZ47A 10FL2C48A 10FL2CZ47A 10G4B41 10GL2CZ47A 10GWJ2C48C 10GWJ2CZ47C 10J4B41 10JL2CZ47 10JWJ2CZ47

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

MIG20J501L

Abstract: TOSHIBA IGBT DATA BOOK 1JU42 C7021 RN1242 TLP421 inverter circuit using IGBT TOSHIBA module mig20j
Contextual Info: MIG20J501L TOSHIBA INTELLIGENT POWER MODULE MIG20J501L FEATURES 1 Maximum Rating VCES = 600 V, IC = 20 A (2) Control IC (3) (4) • High voltage IC ´ 3 + low voltage IC ´ 1 · 5-V system CMOS/correspond to TTL · Single power supply driving bootstrap circuit

1gw transistor

Abstract: TSA1000 1J4B41 1G4B41 1B4B41 magnetron power control scr driver ic for rectifier 3 phase scr drive circuit diagram 4G4B41 1B4B42
Contextual Info: mAPPLICATION CIRCUIT 1. Igniter . 448 2. Strobe . 449

MIG20J501L

Abstract: tlp421 equivalent inverter circuit using IGBT TOSHIBA module inverter air conditioner toshiba overcurrent inverter protection TOSHIBA IGBT DATA BOOK 1JU42 C7021 RN1242 TLP421
Contextual Info: MIG20J501L TOSHIBA INTELLIGENT POWER MODULE MIG20J501L FEATURES 1 Maximum Rating VCES = 600 V, IC = 20 A (2) Control IC (3) (4) • High voltage IC x 3 + low voltage IC × 1 • 5-V system CMOS/correspond to TTL • Single power supply driving bootstrap circuit

S6A35

Abstract: SF3G42 SF10JZ47 S6785G SF3J42 1R5GU41 S6A37 SCR S6A37 GT8G132 SM3GZ47
Contextual Info: [ 9 ] 応用回路例 [ 9 ] 応用回路例 1. スイッチング電源 1 自励式シングルフライバック方式 (RCC) 応用回路例 交 交流入力 二次整流 ダイオード 流 フィルタ + 直流出力 − 差動増幅 回 路 駆動用

DO-41S

Abstract: DO-15L 1Z220 U1DL49 CRH01 1FWJ43N CMZ24 U05NH 2z16 CRS01
Contextual Info: [ 4 ] 推奨品種一覧表 [ 4 ] 推奨品種一覧表 <新規設計時の推奨品 新規設計時の推奨品> 新規設計時の推奨品 一般整流ダイオード ピーク繰り返し逆電圧 パッケージ 100 V 0.7 A 平均順電流 1A 400 V 600 V

mig30j501l

Abstract: MIG30J50 MIG30J inverter circuit using IGBT TOSHIBA module
Contextual Info: MIG30J501L TOSHIBA INTELLIGENT POWER MODULE MIG30J501L FEATURES 1 Maximum Rating VCES = 600 V, IC = 30 A (2) Control IC (3) (4) • High voltage IC x 3 + low voltage IC × 1 • 5-V system CMOS/correspond to TTL • Single power supply driving bootstrap circuit

TB1253N

Abstract: TB1240 TA8792N TA8792 tb1238 f062dsl TC90A65F TB1238BN F1814B LB 122s
Contextual Info: 2000-2 エネルギーとエレクトロニクス 東芝半導体システムカタログ TV編 Y1A1AH TVの機能別基本ブロック図 音声処理部 周波数シンセサイザ部 音声多重復調 SIF UHF/VHF チューナ サラウンド 機能 SAW

BTA136

Abstract: ft0818mw SM4007 Panjit BY288 FT2516NH FS0802NH FT0817MH ft1208MW ft0618mh equivalent components of diode her207
Contextual Info: Cross Reference Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

Contextual Info: MIG20J501L TOSHIBA INTELLIGENT POWER MODULE MIG20J501L FEATURES 1 Maximum Rating VCES = 600 V, IC = 20 A (2) Control IC (3) (4) • High voltage IC x 3 + low voltage IC × 1 • 5-V system CMOS/correspond to TTL • Single power supply driving bootstrap circuit