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    1KA IGBT Search Results

    1KA IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    1KA IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J400A

    Abstract: calculation of IGBT snubber westcode igbt
    Text: Provisional Data Data Sheet Issue:- 2  WESTCODE Date:- 16 Feb, 2001 Absolute Maximum Ratings VOLTAGE RATINGS   IGBT Series/Chopper Diode Type F0400LC18 MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 1800 V VRSM Non-repetitive peak reverse voltage, (note 1)


    Original     		PDF F0400LC18 VRM10V, J400A calculation of IGBT snubber westcode igbt

    F1400NC

    Abstract: F1400NC18 TOT 2206 transistor calculation of IGBT snubber
    Text: Provisional Data Data Sheet Issue:- 1a  WESTCODE Date:- 19 Apr, 2001 Absolute Maximum Ratings VOLTAGE RATINGS   IGBT Series/Chopper Diode Type F1400NC18 MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 1800 V VRSM Non-repetitive peak reverse voltage, (note 1)


    Original     		PDF F1400NC18 F1400NC18 F1400NC TOT 2206 transistor calculation of IGBT snubber

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Data Sheet Issue:- 1a  WESTCODE Date:- 19 Apr, 2001 Absolute Maximum Ratings VOLTAGE RATINGS VRRM Repetitive peak reverse voltage, note 1 VRSM Non-repetitive peak reverse voltage, (note 1)   OTHER RATINGS (note 6)   IGBT Series/Chopper Diode


    Original     		PDF F1400NC18 F1400NC18

    IRGC100B120UB

    Abstract: 1kA IGBT
    Text: PD - 93873 IRGC100B120UB Die in Wafer Form Features • • • • • 1200V IC nom = 100A VCE(on) typ.= 3.1V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability


    Original     		PDF IRGC100B120UB 150mm IRGC100B120UB 1kA IGBT

    IRGC20B60KB

    Abstract: No abstract text available
    Text: PD - 94375 IRGC20B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 20A VCE(on) typ.=1.82V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)


    Original     		PDF IRGC20B60KB 150mm IRGC20B60KB

    1kA IGBT

    Abstract: IRGC30B60KB
    Text: PD - 94376 IRGC30B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 30A VCE(on) typ.=1.95V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)


    Original     		PDF IRGC30B60KB 150mm 1kA IGBT IRGC30B60KB

    IRGC50B120UB

    Abstract: No abstract text available
    Text: PD - 93869 IRGC50B120UB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom =50A VCE(on) typ.=3.15V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology UltraFast 10µs Short Circuit Capability


    Original     		PDF IRGC50B120UB 150mm 20KHz IRGC50B120UB

    IRGC50B120KB

    Abstract: No abstract text available
    Text: PD - 93870 IRGC50B120KB Die in Wafer Form Features • • • • • 1200V IC nom = 50A VCE(on) typ.=2.15V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability


    Original     		PDF IRGC50B120KB 150mm IRGC50B120KB

    1kA IGBT

    Abstract: IRGC100B120UB induction heating
    Text: PD - 93873A IRGC100B120UB Die in Wafer Form Features G Benefits • • • • 1200V IC nom = 100A VCE(on) typ.= 3.1V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C • GEN5 Non Punch Through (NPT) Technology • Low VCE(on) • 10µs Short Circuit Capability


    Original     		PDF 3873A IRGC100B120UB 150mm 20KHz 1kA IGBT IRGC100B120UB induction heating

    IRGC75B120UB

    Abstract: No abstract text available
    Text: PD - 93871 IRGC75B120UB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom =75A VCE(on) typ.= 3.1V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology UltraFast 10µ s Short Circuit Capability


    Original     		PDF IRGC75B120UB 150mm 20KHz IRGC75B120UB

    IRGC50B60KB

    Abstract: 4kA IGBT
    Text: PD - 94377 IRGC50B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom =50A VCE(on) typ.=2.0V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability


    Original     		PDF IRGC50B60KB 150mm IRGC50B60KB 4kA IGBT

    IRGC10B60KB

    Abstract: IRGS10B60KD
    Text: PD - 94409 IRGC10B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 10A VCE(on) typ.=1.8V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)


    Original     		PDF IRGC10B60KB 150mm IRGS10B60KD IRGC10B60KB IRGS10B60KD

    IRGC5B60KB

    Abstract: No abstract text available
    Text: PD - 94408 IRGC5B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 5A VCE(on) typ.=1.8V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability


    Original     		PDF IRGC5B60KB 150mm IRGS5B60KD IRGC5B60KB

    IRGC49B120UB

    Abstract: IRGPS40B120UD
    Text: PD - 94352 IRGC49B120UB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom = 50A VCE(on) typ.=3.39V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability


    Original     		PDF IRGC49B120UB 150mm 20KHz IRGPS40B120UD IRGC49B120UB IRGPS40B120UD

    IRGC100B120KB

    Abstract: 4kA IGBT
    Text: PD - 93874 IRGC100B120KB Die in Wafer Form Features • • • • • 1200V IC nom = 100A VCE(on) typ.= 2.2V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability


    Original     		PDF IRGC100B120KB 150mm IRGC100B120KB 4kA IGBT

    IRGC25B120UB

    Abstract: 1kA IGBT IGBT Transistor 1200V, 25A induction welding
    Text: PD - 93867 IRGC25B120UB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom =25A VCE(on) typ.=3.37V @ IC(nom) @ 25°C UltraFast IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology UltraFast 10µ s Short Circuit Capability


    Original     		PDF IRGC25B120UB 150mm 20KHz IRGC25B120UB 1kA IGBT IGBT Transistor 1200V, 25A induction welding

    IRGPS60B120KD

    Abstract: IRGC49B120KB
    Text: PD - 94353 IRGC49B120KB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom = 50A VCE(on) typ.=2.33V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)


    Original     		PDF IRGC49B120KB 150mm IRGPS60B120KD Saturatio47 IRGPS60B120KD IRGC49B120KB

    SK 5207

    Abstract: No abstract text available
    Text: PD - 94562 IRGC16B120KB Die in Wafer Form Features • • • • • 1200V IC nom =15A VCE(on) typ.=2.55V@ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability


    Original     		PDF IRGC16B120KB 150mm GB15RF120K SK 5207

    IRGC75B120KB

    Abstract: 0443 IC HA-1370S
    Text: PD - 93872 IRGC75B120KB Die in Wafer Form Features • • • • • 1200V IC nom = 75A VCE(on) typ.= 2.1 V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability


    Original     		PDF IRGC75B120KB 150mm IRGC75B120KB 0443 IC HA-1370S

    Untitled

    Abstract: No abstract text available
    Text: PD - 94560 IRGC8B60KB Die in Wafer Form Features 600V IC nom = 8.0A VCE(on) typ.=1.8V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C • • • • • GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability Square RBSOA


    Original     		PDF IRGC8B60KB 150mm IRGB8B60K

    1kA IGBT

    Abstract: IRGC15B120KB
    Text: PD - 93866 IRGC15B120KB Die in Wafer Form Features • • • • • 1200V IC nom =15A VCE(on) typ.=2.46V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low V CE(on) 10µ s Short Circuit Capability


    Original     		PDF IRGC15B120KB 150mm 1kA IGBT IRGC15B120KB

    for IR IGBT die

    Abstract: IRG7CH30K10B IRG7PH30K10 IRG7CH
    Text: PD - 97135A IRG7CH30K10B IRG7CH30K10B IGBT Die in Wafer Form Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 S short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Co-Efficient


    Original     		PDF 7135A IRG7CH30K10B IRG7CH30K10B 150mm O-247 AN-1086 for IR IGBT die IRG7PH30K10 IRG7CH

    IRG7CH73K10

    Abstract: IRG7CH73K10B MIL-HDBK-263
    Text: PD - 97430A IRG7CH73K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		PDF 7430A IRG7CH73K10B IRG7CH73K10 IRG7CH73K10B MIL-HDBK-263

    Untitled

    Abstract: No abstract text available
    Text: PD - 97430 IRG7CH73K10B Features • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution


    Original     		PDF IRG7CH73K10B 1200e