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    IRG7PH30K10 Search Results

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    IRG7PH30K10 Price and Stock

    Infineon Technologies AG IRG7PH30K10PBF

    IGBT 1200V 33A 210W TO247AC
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    DigiKey IRG7PH30K10PBF Tube
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    Infineon Technologies AG IRG7PH30K10DPBF

    IGBT 1200V 30A 180W TO247AC
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    DigiKey IRG7PH30K10DPBF Tube
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    International Rectifier IRG7PH30K10PBF

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    Bristol Electronics IRG7PH30K10PBF 50
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    Quest Components IRG7PH30K10PBF 40
    • 1 $4.704
    • 10 $3.4496
    • 100 $3.136
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    Renesas Electronics Corporation IRG7PH30K10PBF

    INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
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    ComSIT USA IRG7PH30K10PBF 200
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    International Rectifier IRG7PH30K10DPBF

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
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    ComSIT USA IRG7PH30K10DPBF 100
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    IRG7PH30K10 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG7PH30K10DPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 30A 180W TO247AC Original PDF
    IRG7PH30K10PBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 33A 210W TO247AC Original PDF

    IRG7PH30K10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ice 265

    Abstract: ICE200 TR4032
    Text: PD - 96156A IRG7PH30K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA 100% of the parts tested for ILM


    Original     		PDF 6156A IRG7PH30K10PbF O-247AC ice 265 ICE200 TR4032

    Untitled

    Abstract: No abstract text available
    Text: PD - 97403 IRG7PH30K10DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses 10 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM


    Original     		PDF IRG7PH30K10DPbF O-247AC

    IRG7PH30K10D

    Abstract: C-150 IRG7PH30K10 1431tr
    Text: PD - 97403 IRG7PH30K10DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses 10 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM


    Original     		PDF IRG7PH30K10DPbF O-247AC IRG7PH30K10D C-150 IRG7PH30K10 1431tr

    Untitled

    Abstract: No abstract text available
    Text: PD - 96156A IRG7PH30K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA 100% of the parts tested for ILM


    Original     		PDF 6156A IRG7PH30K10PbF O-247AC

    IPM PLASMA

    Abstract: 200W solar inverter SOLAR INVERTER IRAM136-3063B 3000w smps 300W solar inverter IRAMS10UP60A smps 2500w IRG4PC50SPBF IRAMY20UP60B
    Text: IRAM | Selection Guide Product Line Overview IRAM Applications Key Products Energy Saving Products • Appliances • Digital Control ICs Integrated design platforms that enable customers to add energyconserving features that achieve lower operating energy costs and


    Original     		PDF SIP-05 O-247AC IRG7PH30K10D IRGP20B120U-EP IRG4PH50KDPBF O-220AB; O-220 IPM PLASMA 200W solar inverter SOLAR INVERTER IRAM136-3063B 3000w smps 300W solar inverter IRAMS10UP60A smps 2500w IRG4PC50SPBF IRAMY20UP60B

    for IR IGBT die

    Abstract: IRG7CH30K10B IRG7PH30K10 IRG7CH
    Text: PD - 97135A IRG7CH30K10B IRG7CH30K10B IGBT Die in Wafer Form Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 S short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Co-Efficient


    Original     		PDF 7135A IRG7CH30K10B IRG7CH30K10B 150mm O-247 AN-1086 for IR IGBT die IRG7PH30K10 IRG7CH