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    1M SYNCHRONOUS DRAM SAMSUNG Search Results

    1M SYNCHRONOUS DRAM SAMSUNG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-USB2AMBMMC-001 Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-001 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 1m (3.3') Datasheet
    CS-USB3IN1WHT-000 Amphenol Cables on Demand Amphenol CS-USB3IN1WHT-000 3-in-1 USB 2.0 Universal Apple/Android Charge & Sync Cable Adapter - USB Type A Male In - Apple Lightning (8-Pin) / Apple 30-Pin / USB Micro-B (Android) Male Out - White Datasheet
    CS-USB2AMBMMC-002 Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-002 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 2m (6.6') Datasheet
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy

    1M SYNCHRONOUS DRAM SAMSUNG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S641632C

    Abstract: circuit diagram for auto on off
    Text: K4S641632C CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Jun. 1999 K4S641632C CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S641632C 64Mbit 16Bit K4S641632C A10/AP circuit diagram for auto on off

    K4S641632E-TC75

    Abstract: No abstract text available
    Text: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.2 Sept. 2001 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S641632E 64Mbit 16Bit K4S641632E A10/AP K4S641632E-TC75

    K4S64163

    Abstract: K4S641632E
    Text: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Oct. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Oct. 2000 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S641632E 64Mbit 16Bit K4S641632E A10/AP K4S64163

    Untitled

    Abstract: No abstract text available
    Text: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Dec. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Dec. 2000 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S641632E 64Mbit 16Bit A10/AP

    Untitled

    Abstract: No abstract text available
    Text: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jun. 1999 K4S641632D CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S641632D 64Mbit 16Bit A10/AP

    K4S161622E-TC60

    Abstract: K4S161622E-TC80 K4S161622E K4S161622E-TC10 K4S161622E-TC70 samsung k4s161622e
    Text: K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.0 March 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev 0.0 Mar. '01 K4S161622E CMOS SDRAM 512K x 16Bit x 2 Banks Synchronous DRAM


    Original     		PDF K4S161622E 16bit K4S161622E 50-TSOP2-400CF 20MAX 10MAX 075MAX K4S161622E-TC60 K4S161622E-TC80 K4S161622E-TC10 K4S161622E-TC70 samsung k4s161622e

    Untitled

    Abstract: No abstract text available
    Text: K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.2 Oct 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev 0.2 Oct. '02 K4S161622E CMOS SDRAM 512K x 16Bit x 2 Banks Synchronous DRAM


    Original     		PDF K4S161622E 16bit 2K/32ms) 50-TSOP2-400CF 20MAX 10MAX 075MAX

    K4S161622E-TC10

    Abstract: K4S161622E-TC60 K4S161622E K4S161622E-TC55 K4S161622E-TC70 K4S161622E-TC80
    Text: K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 Jan 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 Jan '03 K4S161622E CMOS SDRAM 512K x 16Bit x 2 Banks Synchronous DRAM


    Original     		PDF K4S161622E 16bit K4S161622E 50-TSOP2-400CF 20MAX 10MAX 075MAX K4S161622E-TC10 K4S161622E-TC60 K4S161622E-TC55 K4S161622E-TC70 K4S161622E-TC80

    K4S641632C

    Abstract: 54TSOP2 54-TSOP2-400AF
    Text: K4S641632C CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The K4S641632C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS


    Original     		PDF K4S641632C 16Bit K4S641632C 54-TSOP2-400AF 54TSOP2 54-TSOP2-400AF

    KM416S4030C

    Abstract: 1M Synchronous DRAM samsung
    Text: KM416S4030C Preliminary PC133 CMOS SDRAM Revision History Revision 0.0 Oct., 1998 • PC133 first published. REV. 0 Oct. '98 Preliminary PC133 CMOS SDRAM KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S4030C is 67,108,864 bits synchronous high data


    Original     		PDF KM416S4030C PC133 16Bit KM416S4030C A10/AP 1M Synchronous DRAM samsung

    KM48S2120

    Abstract: K4S160822D
    Text: K4S160822D CMOS SDRAM 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL Revision 1.0 October 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Oct. 1999 K4S160822D CMOS SDRAM Revision History


    Original     		PDF K4S160822D K4S160822D 50-TSOP2-400F KM48S2120

    Untitled

    Abstract: No abstract text available
    Text: K4S161622H CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 December 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 December '03 K4S161622H CMOS SDRAM Revision History


    Original     		PDF K4S161622H 16bit 200MHz.

    Untitled

    Abstract: No abstract text available
    Text: K4S161622H CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.2 January 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.2 January '04 K4S161622H CMOS SDRAM Revision History


    Original     		PDF K4S161622H 16bit 200MHz.

    Untitled

    Abstract: No abstract text available
    Text: K4S161622H CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.0 November 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.0 November '03 K4S161622H CMOS SDRAM Revision History


    Original     		PDF K4S161622H 16bit 200MHz. 50-TSOP2-400CF 20MAX 10MAX

    K4S641632F-TC75

    Abstract: K4S641632F
    Text: K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 May. 2003 K4S641632F CMOS SDRAM Revision History Revision 0.0 June, 2001


    Original     		PDF K4S641632F 64Mbit 16Bit 100MHz A10/AP K4S641632F-TC75 K4S641632F

    Untitled

    Abstract: No abstract text available
    Text: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May. 2000 K4S641632D CMOS SDRAM Revision History Revision 0.1 May 2000


    Original     		PDF K4S641632D 64Mbit 16Bit K4S280432C-TC75/TL75 A10/AP

    K4S161622E-TI

    Abstract: No abstract text available
    Text: K4S161622E-TI/E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Industrial/ExtendedTemperature Revision 0.0 June 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev 0.0 Jun '01 K4S161622E-TI/E


    Original     		PDF K4S161622E-TI/E 16bit K4S161622E 50-TSOP2-400CF 20MAX 10MAX 075MAX K4S161622E-TI

    KM416S1020

    Abstract: 2 Banks x 512K x 16
    Text: KM416S1020C CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.6 September 1998 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 0.6 Sep. 1998 KM416S1020C CMOS SDRAM Revision History


    Original     		PDF KM416S1020C 16bit KM416S1020C-H/L 100MHz KM416S1020C-8 KM416S1020C-7 115mA KM416S1020 2 Banks x 512K x 16

    K4S641632F-TC75

    Abstract: No abstract text available
    Text: K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S641632F CMOS SDRAM Revision History Revision 0.0 June, 2001


    Original     		PDF K4S641632F 64Mbit 16Bit 100MHz A10/AP K4S641632F-TC75

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S403OC is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS


    OCR Scan     		PDF KM416S4030C 16Bit KM416S403OC

    Untitled

    Abstract: No abstract text available
    Text: KM416S4030B CMOS SDRAM 1M x 16Bitx 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S4030B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’S high performance CMOS


    OCR Scan     		PDF KM416S4030B 16Bitx KM416S4030B 10/AP

    km48s2020ct

    Abstract: KM48S2020CT-G
    Text: KM48S2020C CMOS SDRAM 1M x 8Bit x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM48S2020C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG'S high performance CMOS technol­


    OCR Scan     		PDF KM48S2020C KM48S2020C 10/AP km48s2020ct KM48S2020CT-G

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM416S4031C CMOS SDRAM 1M x 16Bitx 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • • • • The KM416S4031C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS


    OCR Scan     		PDF KM416S4031C 16Bitx KM416S4031C 10/AP

    KM416S4031BT-GS

    Abstract: KM416S4031 KM416S4031BT-G8
    Text: Preliminary KM416S4031B CMOS SDRAM 1M X 16Bit X 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • • • • The KM416S4031B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS


    OCR Scan     		PDF KM416S4031B 16Bit KM416S4031B 10/AP KM416S4031BT-GS KM416S4031 KM416S4031BT-G8