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    1MBH60100 Search Results

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    1MBH60100 Price and Stock

    Fuji Electric Co Ltd 1MBH60-100

    INSULATED GATE BIPOLAR TRANSISTOR, 60A I(C), 1000V V(BR)CES, N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1MBH60-100 9
    • 1 $20
    • 10 $15
    • 100 $15
    • 1000 $15
    • 10000 $15
    Buy Now

    1MBH60100 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1MBH60-100 Fuji Electric INSULATED GATE BIPOLAR TRANSISTOR Scan PDF
    1MBH60-100 Fuji Electric IGBT Chip Scan PDF
    1MBH60-100 Fuji Electric IGBT mold type Scan PDF

    1MBH60100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1mbh60-100

    Abstract: No abstract text available
    Text: 1MBH60-100 Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1k V(BR)GES (V)20 I(C) Max. (A)60 Absolute Max. Power Diss. (W)260 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case


    Original
    PDF 1MBH60-100

    IGBT 1MBH60-100

    Abstract: J9100
    Text: 1MBH60-100 ^ ± IG B T IGBT INSULATED GATE BIPOLAR TRANSISTOR • : Outline Drawings bkü : Features •H i â X ' • i& ü ü in liS • Hi gh Speed Switching Low Saturation Voltage Hfti/tCMOS-ir— MUie • :y High Impedance Gate Small Package 0. 6 * ■ ffliÊ : Applications


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    PDF 1MBH60-100 l95t/RB9 IGBT 1MBH60-100 J9100

    IGBT 1MBH60-100

    Abstract: 1MBH60-100 t930 T151 T460
    Text: 1 M B H 6 - 1 ^zblGBT IGBT INSULATED GATE BIPOLAR TRANSISTOR • W K '+ i i : Outline Drawings : Features • High Speed Switching Low Saturation Voltage • M A lJ 'f —H£i/t MOS'ir“ M?|is High Impedance Gate Small Package : Applications • flIG i& iS M tliS


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    PDF 1MBH60-100 I95t/R89) IGBT 1MBH60-100 1MBH60-100 t930 T151 T460

    IGBT 1MBH60-100

    Abstract: 1MBH60-100 TRANSISTOR 1mbh60-100 IGBT 900v 60a s4502 IC60 1mbh60
    Text: 1 M B H 6 - 1 ^zblGBT IGBT INSULATED GATE BIPOLAR TRANSISTOR • W K '+ i i : Outline Drawings : Features • High Speed Switching Low Saturation Voltage • M A lJ 'f —H£i/t MOS'ir“ M?|is High Impedance Gate Small Package : Applications • flIG i& iS M tliS


    OCR Scan
    PDF 1MBH60-100 IGBT 1MBH60-100 1MBH60-100 TRANSISTOR 1mbh60-100 IGBT 900v 60a s4502 IC60 1mbh60

    1MBC15-060

    Abstract: 1mb12-140 TO-3PL 1MBH50D-060 collmer igbt
    Text: DISCRETE IGBT 600 VOLT, DISCRETE IGBT • 5 - 5 0 Amps Device Type V ces Pc lc Tc=25°C Tc=80°C Tc=100°C Volts Amps Amps Amps 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 600 600 600 600 13 15 5 10 1MB30-060 1MBH50-060 600 600 20 24 38 48 82 20 30 Vge = 15V


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    PDF 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 1MB30-060 1MBH50-060 O-220 1MBC05D-060 1mb12-140 TO-3PL 1MBH50D-060 collmer igbt

    2mb175

    Abstract: 1MBH60-090 2MB175L-060 HIGH VOLTAGE DIODE for microwave ovens 1mbh 1MBH65-090 ERD60-100 T0220AB T03PL imbi300
    Text: \W]IGBT mold types • • • • High speed sw itching • Low saturation vo ltag e V o lta g e drive m e th o d perm its lo w p o w er drive Su ited fo r high fre q u e n c y p o w e r supplies, such as m icro w a ve ovens W h e n using these IGBTs, FUJI'S fast recovery d io d e ER D 60-100 is required.


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    PDF ERD60-100 1MBH60-090 T03PL 1MBH65-090 1MBH65 2MBI300LB 2MBI400L-060 2mb175 2MB175L-060 HIGH VOLTAGE DIODE for microwave ovens 1mbh T0220AB imbi300

    1mbh60-100

    Abstract: Ir 900v 60a 000M4S3 QQD4451 MIM 205 S2371 MA 75816
    Text: r 1. Absolute maximum ratings Tc=25*C I terns . Symbols Collector-Emitter Voltage Gate-Emitter Voltage Co11ec tor Curren t , Continuos Ratings Units Vces 1000 V Vg e s ±20 V 60 A 180 A Ic Pulse-50^s Ic pulse Max.Power Dissipation Pc 260 Operating Temperature


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    PDF Pulse-50 -t-15V. 1mbh60-100 Ir 900v 60a 000M4S3 QQD4451 MIM 205 S2371 MA 75816

    IGBT 1MBH60-100

    Abstract: 1mbh 1MBH60100 1MBH60-100 bhoo imbh60 FUJI IGBT
    Text: Ratings and ch aracteristics of Fuji IGBT 1 M B H 6 1. Absolute maximum ratings 0 — 1 O O Tc=25*C I terns Symbols Ratings Units Col lector-Em itter Voltage Vces 1000 V Gate-Emitter Voltage Vces ±20 V 60 A 180 A 260 W + 150 *C Continuos Ic C ollector Current


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    PDF Pulse-50Â Tji125Â 044SC) IGBT 1MBH60-100 1mbh 1MBH60100 1MBH60-100 bhoo imbh60 FUJI IGBT

    1mbh

    Abstract: No abstract text available
    Text: D IG B T m old types 1High speed sw itching • Lo w saturation voltage Voltage drive m ethod perm its low pow er drive Su ited for high freq uency po w er supplies, such as m icro w a ve ovens 1W h e n using these IG BT s, F U JI'S fast recovery diode ERD60-100 is required.


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    PDF ERD60-100 1MBH60-090 1MBH60-100 1MBH65-090 1MBH65-100 ERD65-090 1mbh

    1MBH65-090

    Abstract: 1mbh60-090 2MBI50N-120 6MBI50FA-060 6MBI50L-120 2MBI75F-060 6MBI10L-060 1mbh 2mbi200f 2mbi25f
    Text: IGBT MODULES Ratings and Specifications Alphanumerical index Type Page G roi No. ER ERD60-100 ERD65-090 40 40 Page G rou p No. 1 1 2M 2MBI25F-120 2MBI25L-120 43 41 8 4 2MBI50F-060 2MBI50F-120 2MBI50L-060 2MBI50L-120 2MBI50N-060 2MBI50N-120 42 43 40 41 44 44


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    PDF ERD60-100 ERD65-090 2MBI25F-120 2MBI25L-120 2MBI50F-060 2MBI50F-120 2MBI50L-060 2MBI50L-120 2MBI50N-060 2MBI50N-120 1MBH65-090 1mbh60-090 6MBI50FA-060 6MBI50L-120 2MBI75F-060 6MBI10L-060 1mbh 2mbi200f 2mbi25f

    1mb12-140

    Abstract: 1MBI30L-060 2MBI100L-060 1mb12 IGBT 1MBH60-100 1MBI30L060 m-219 2MBI100F-060 1mbh collmer igbt
    Text: IGBT DISCRETE T0-3PL, T0-3PF & BBT PACKAGE Device V ces V ce sat V qe=15V Pkg. Switching time (Max.) lc PC cont. Par IGBT Max. lc ton V ges type toff tf Volts Volts Amps. Watts Volts Amps. H sec. 1MB12-140 1400 ±20 12 100 6.0 12 - 1.2 1.0 T03P F - sec.


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    PDF 1MB12-140 1MBH60-100 1MBI30L-060 1MBI50L-060 1MBI75L-060 2MBI50F-060 2MBI75F-060 2MBI100F-060 2MBI150F-060 2MBI200F-060 2MBI100L-060 1mb12 IGBT 1MBH60-100 1MBI30L060 m-219 1mbh collmer igbt