j3305
Abstract: FJD3305H1TM j3305h1 FJD3305H1
Text: FJD3305H1 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol TC=25°C unless otherwise noted
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FJD3305H1
FJD3305H1
j3305
FJD3305H1TM
j3305h1
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DIODE 1N4006
Abstract: 1mh inductor design MOSFET MTP1N60 600V 2A 1mh inductor IRFBC10 UNITRODE application note u132 800V dc to dc boost converter 1mH 250mA 1mH boost inductor ups circuit schematic
Text: DN-59A Design Note UCC3889 Bias Supply Controller Evaluation Kit − Schematic and Lists of Materials by Bill Andreycak Evaluation Kits facilitate a quick measurement of new IC performance in typical application circuits without a lengthy investment of time and resources. The
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DN-59A
UCC3889
U-132
DIODE 1N4006
1mh inductor design
MOSFET MTP1N60 600V 2A
1mh inductor
IRFBC10
UNITRODE application note u132
800V dc to dc boost converter
1mH 250mA
1mH boost inductor
ups circuit schematic
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1mh 250ma inductor choke
Abstract: M57184N-715B C13-FR
Text: M57184N-715B Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 � High Voltage Input DC-to-DC Converter � ������������ � ���� � �� � � � � � ���� � � �
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M57184N-715B
M57184N-715B
5V/350mA
V/200mA.
350mA
200mA
C13-FR
4590-105K
500mA,
1mh 250ma inductor choke
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j3305
Abstract: j3305h1 FJD3305H1TM QS 100 NPN Transistor transistor Electronic ballast electronic ballast with npn transistor fjd3
Text: FJD3305H1 NPN Silicon Transistor Features • • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application Wave Soldering DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*
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FJD3305H1
j3305
j3305h1
FJD3305H1TM
QS 100 NPN Transistor
transistor Electronic ballast
electronic ballast with npn transistor
fjd3
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1mh 250ma inductor choke
Abstract: ASIP 715b
Text: M57184N-715B Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 A High Voltage Input DC-to-DC Converter C B K N F H E M G J P 6 VIN 8 CURRENT DETECTOR 1 10 VO-1 VOLTAGE DETECTOR BASE DRIVER COMMON 4 CURRENT DETECTOR 12 18 VO-2
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M57184N-715B
M57184N-715B
5V/350mA
V/200mA.
350mA
200mA
500mA,
C13-FR
4590-105K
1mh 250ma inductor choke
ASIP
715b
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350mA 220vac driver
Abstract: 1mh 250ma inductor choke inductor 1mH 250mA 1mh inductor design M57184N-715 1mh inductor 5900-102 choke coil inductor mitsumi inductors C13-FR
Text: M57184N-715 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 A High Voltage Input DC-to-DC Converter C B 1 18 K N H E M G J P 6 VIN 8 CURRENT DETECTOR 1 10 VO-1 VOLTAGE DETECTOR BASE DRIVER Description: M57184N-715 is a non-isolated
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M57184N-715
M57184N-715
360VDC
5V/350mA
V/200mA.
C13-FR
4590-105K
500mA,
350mA 220vac driver
1mh 250ma inductor choke
inductor 1mH 250mA
1mh inductor design
1mh inductor
5900-102
choke coil inductor
mitsumi inductors
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350mA 220vac driver
Abstract: 1mh 250ma inductor choke
Text: M57184N-715B Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 A High Voltage Input DC-to-DC Converter C B K N F H E M G J P 6 VIN 8 CURRENT DETECTOR 1 10 VO-1 VOLTAGE DETECTOR BASE DRIVER COMMON 4 CURRENT DETECTOR 12 18 VO-2
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M57184N-715B
M57184N-715B
5V/350mA
V/200mA.
350mA
200mA
500mA,
C13-FR
4590-105K
350mA 220vac driver
1mh 250ma inductor choke
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j3305h1
Abstract: No abstract text available
Text: FJD3305H1 NPN Silicon Transistor Features • • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application Wave Soldering DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*
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FJD3305H1
j3305h1
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Untitled
Abstract: No abstract text available
Text: M57184N-715B A HighVoltageInput DC-to-DCConverter C M57184N-715B B ���� 1 18 H K F E 6 VIN D D G D J 8 CURRENT DETECTOR 1 10 VO-1
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M57184N-715B
M57184N-715Bà
5V/350mAà
V/200mA.
500mA,
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diode 1N4006 specifications
Abstract: MTP1N60 MOSFET MTP1N60 600V 2A offline UPS APPLICATION 1mh inductor design nonisolated flyback converter IRFBC10 power mosfet 600v 1mH boost inductor 1N4006
Text: DN-59A Design Note UCC3889 Bias Supply Controller Evaluation Kit − Schematic and Lists of Materials by Bill Andreycak Evaluation Kits facilitate a quick measurement of new IC performance in typical application circuits without a lengthy investment of time and resources. The
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DN-59A
UCC3889
diode 1N4006 specifications
MTP1N60
MOSFET MTP1N60 600V 2A
offline UPS APPLICATION
1mh inductor design
nonisolated flyback converter
IRFBC10
power mosfet 600v
1mH boost inductor
1N4006
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ZENER DIODE z91
Abstract: ZNR 10K 271 TRANSISTOR REPLACEMENT ECG triac cf 406 panasonic ZNR MOV TRANSISTOR REPLACEMENT ECG 130 X2 MKP SH mr 504 diode SN2 357 hv9931 LED driver
Text: Supertex inc. HV9931DB1v2 LED Driver Demo Board Input 120VAC // Output 350mA, 40V 14W General Description The HV9931 LED driver is primarily targeted at low to medium power LED lighting applications where galvanic isolation of the LED string is not an essential requirement.
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HV9931DB1v2
120VAC
350mA,
HV9931
ZENER DIODE z91
ZNR 10K 271
TRANSISTOR REPLACEMENT ECG
triac cf 406
panasonic ZNR MOV
TRANSISTOR REPLACEMENT ECG 130
X2 MKP SH
mr 504 diode
SN2 357
hv9931 LED driver
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FJB3307D
Abstract: QS 100 NPN Transistor transistor Electronic ballast electronic ballast circuit US Global Sat
Text: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B D2-PAK 1 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings
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FJB3307D
FJB3307D
QS 100 NPN Transistor
transistor Electronic ballast
electronic ballast circuit
US Global Sat
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Untitled
Abstract: No abstract text available
Text: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B 1 D2-PAK 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings
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FJB3307D
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR（ NPN ） TO—220 FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V BR CBO : 700 V Operating and storage junction temperature range
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O-220
3DD13003
100TYP
540TYP
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Untitled
Abstract: No abstract text available
Text: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B 1 D2-PAK 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings
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FJB3307D
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KSC5305D
Abstract: US Global Sat
Text: KSC5305D NPN Silicon Transistor Features • • • • • High Voltage High Speed Power Switch Application Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread even though corner spirit product
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KSC5305D
O-220
KSC5305D
US Global Sat
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Untitled
Abstract: No abstract text available
Text: KSC5305D NPN Silicon Transistor Features • • • • • High Voltage High Speed Power Switch Application Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread even though corner spirit product
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KSC5305D
O-220
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B332
Abstract: B513 B123 B223 B333 B682 UU10LF UU10LF-B123 UU10LF-B223 UU10LF-B332
Text: AC COMMON MODE CHOKES M OUTLINE／概要 1. Common mode chokes for effective AC line noise prevention UU10LF 1. ACラインノイズ防止に有効なコモンモードチョーク K Impedance Characteristics／インピーダンス特性 DIMENSIONS mm 外形寸法図
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UU10LF
50/60Hz
UU10LF-B332
430mArms
340mArms
UU16LF-152
UU16LF-402
UU16LF-802
900mArms
B332
B513
B123
B223
B333
B682
UU10LF
UU10LF-B123
UU10LF-B223
UU10LF-B332
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Untitled
Abstract: No abstract text available
Text: FJB3307D High-Voltage Fast-Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch-Mode Power Supplies Internal Schematic Diagram C B 1 D2-PAK 1.Base 2.Collector 3.Emitter E Ordering Information
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FJB3307D
FJB3307DTM
J3307D
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MAX223
Abstract: B123 B223 B332 B333 B513 B682 UU10LF UU10LFB UU10LFB-B123
Text: AC COMMON MODE CHOKES M OUTLINE／概要 1. Common mode chokes for effective AC line noise prevention UU10LFB 1. ACラインノイズ防止に有効なコモンモードチョーク K Impedance Characteristics／インピーダンス特性 DIMENSIONS mm
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UU10LFB
50/60Hz
UU10LFB-B332
650mArms
UU10LFB-B682
430mArms
UU10LFB-B123
75Arms
UU16LF
MAX223
B123
B223
B332
B333
B513
B682
UU10LF
UU10LFB
UU10LFB-B123
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Untitled
Abstract: No abstract text available
Text: IRFM350 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) VDSS ID(cont) RDS(on) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)
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IRFM350
O-254
254AA
300ms,
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IRFM350
Abstract: No abstract text available
Text: IRFM350 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) VDSS ID(cont) RDS(on) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)
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IRFM350
O-254
254AA
300ms,
IRFM350
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IRFBC10
Abstract: 1mh inductor design UNITRODE application note u132 MTP1N60 DN-59 MOSFET MTP1N60 600V 2A 2.2NF 600V 12vdc to 250vdc converters U-149
Text: DN-59A UNITRODE Design Note UCC3889 Bias Supply Controller Evaluation Kit - Schematic and Lists of Materials by Bill Andreycak Evaluation Kits facilitate a quick measurement of new 1C performance in typical application circuits without a lengthy investment of time and resources.
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OCR Scan
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DN-59A
UCC3889
U-132
IRFBC10
1mh inductor design
UNITRODE application note u132
MTP1N60
DN-59
MOSFET MTP1N60 600V 2A
2.2NF 600V
12vdc to 250vdc converters
U-149
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PDF
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ktk dc drive
Abstract: IRLSZ44A sm 0038
Text: IRLSZ44A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BVdss = 60 V Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10|iA Max. @ VDS= 60V
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OCR Scan
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IRLSZ44A
O-220F
7TLM14E
ktk dc drive
IRLSZ44A
sm 0038
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