j3305h1
Abstract: No abstract text available
Text: FJD3305H1 NPN Silicon Transistor Features • • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application Wave Soldering DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*
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FJD3305H1
j3305h1
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j3305
Abstract: j3305h1 FJD3305H1TM QS 100 NPN Transistor transistor Electronic ballast electronic ballast with npn transistor fjd3
Text: FJD3305H1 NPN Silicon Transistor Features • • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application Wave Soldering DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*
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FJD3305H1
j3305
j3305h1
FJD3305H1TM
QS 100 NPN Transistor
transistor Electronic ballast
electronic ballast with npn transistor
fjd3
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j3305
Abstract: FJD3305H1TM j3305h1 FJD3305H1
Text: FJD3305H1 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol TC=25°C unless otherwise noted
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Original
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FJD3305H1
FJD3305H1
j3305
FJD3305H1TM
j3305h1
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