1MX1 SRAM Search Results

1MX1 SRAM Result Highlights (5)

Part	Manufacturer	Description
AM27LS07PC	Rochester Electronics LLC	27LS07 - Standard SRAM, 16X4
CY7C167A-35PC	Rochester Electronics LLC	CY7C167A - CMOS SRAM
HM3-6504B-9	Rochester Electronics LLC	HM3-6504 - Standard SRAM, 4KX1, 220ns, CMOS
HM4-6504B-9	Rochester Electronics LLC	HM4-6504 - Standard SRAM, 4KX1, 220ns, CMOS
MD2114A-5	Rochester Electronics LLC	2114A - 1K X 4 SRAM

1MX1 SRAM Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TC5118160 Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260 Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256	Original	256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260	PDF
1Mx1 SRAM Abstract: No abstract text available Text: WMS1M1-XDEX 1Mx1 SRAM MONOLITHIC ADVANCED* FEATURES • Access Times 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available PIN CONFIGURATION TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 ■ Packaging •32 lead, Ceramic SOJ Package 101	Original	MIL-STD-883 1Mx1 SRAM	PDF
Memories Abstract: UT54ACS244 UT54ACS151 UT54ACS245 UT54ACS365 UT54ACS373 UT54ACS374 UT54ACS541 UT9Q512 Text: Aeroflex UTMC Application Note UTXQ512-AN-000 _ CONVERTING AEROFLEX UTMC UT9Q512 4M SRAM into an SEU IMMUNE 1M X 1 SRAM This application note describes how to use two UT9Q512 4M SRAMs and one UT54ACS151 logic device	Original	UTXQ512-AN-000 UT9Q512 UT54ACS151 UT54ACS151 Memories UT54ACS244 UT54ACS245 UT54ACS365 UT54ACS373 UT54ACS374 UT54ACS541	PDF
27c eeprom Abstract: AS27C256 92132 eeprom dip 36 uv 4lc eeprom 4Mx1 sram FPM DRAM MT42C4256 256Kx4 ZIP FLASH MEMORY 29F Text: STAND ARD MEMOR Y PRODUCT SELECT OR GUIDE ANDARD EMORY ELECTOR CERAMIC CONFIGURATIONS COMMITTED TO PROVIDING HIGH-QUALITY, INNOVATIVE SOLUTIONS TO THE HIGH-RELIABILITY MARKETPLACE STANDARD MEMORY PRODUCTS CERAMIC CONFIGURATIONS SRAM 16MEG MCM Configurable as	Original	16MEG 64Kx4) 256Kx1) 256Kx4) 512Kx32 1Mx16, 2Mx32 4Mx16, 1Mx32 2Mx16, 27c eeprom AS27C256 92132 eeprom dip 36 uv 4lc eeprom 4Mx1 sram FPM DRAM MT42C4256 256Kx4 ZIP FLASH MEMORY 29F	PDF
65656F Abstract: TM1019 DSP 6713 65608E 80C31E 80C32E 80C52E TSC-21020 TSC691E dsp radiation Text: Radiation TEMIC Radiation Evaluation Results and Targets Total Dose Device Family Format/ Function/Speed/ Consumption TEMIC Type Total Dose Parametric Latch–Up LET Threshold SEU Cross Section/BIT Functionnal (Krads) (Krads) Iccsb (mA) (MeV/mg/ cm2) (MeV/mg/	Original	80C31E SCC22900 80C32E 80C52E 65162E SCC2215 TM1019 16Kx9 65656F TM1019 DSP 6713 65608E 80C31E 80C32E 80C52E TSC-21020 TSC691E dsp radiation	PDF
28-pin SOJ SRAM Abstract: EDI811024CS 28 pin ceramic dip 1MX1 1Mx1 SRAM Text: mol EDI811024CS Electronic D««ign* Inci High Speed Megabit Monolithic SRAM 1MX1 Static RAM CMOS, High Speed Monolithic Features The EDI811024CS is an extremely high density, 1024Kx1 bit, high speed Static RAM designed for use in systems where fast computation, low power, and board	OCR Scan	EDI811024CS EDI811024CS 1024Kx1 MIL-STD-883, 55nses A0-A19 28-pin SOJ SRAM 28 pin ceramic dip 1MX1 1Mx1 SRAM	PDF
Untitled Abstract: No abstract text available Text: moi EDI8M11024C Electronic D esign* In c. • High Speed Megabit SRAM Module 1Mx1 Static RAM CMOS, High Speed Module Features The EDI8M11024C is an extremely high density, 1024Kx1 bit, high speed Static RAM module con structed using four 256Kx1 Static RAMs in leadless chip	OCR Scan	EDI8M11024C EDI8M11024C 1024Kx1 256Kx1 T7////77/////	PDF
KMCJ532512 Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7	OCR Scan	KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL	PDF
H31M1 Abstract: EDI8M11024C 901ac Text: m o EDI8M11024C i Electronic D »*lgn i Inc. High Speed Megabit SRAM Module railDiOIMmf 1Mx1 Static RAM CMOS, High Speed Module Features The EDI8M11024C is an extremely high density, 1024Kx1 bit, high speed Static RAM module con structed using four 256Kx1 Static RAMs in leadlesschip	OCR Scan	EDI8M11024C EDI8M11024C 1024Kx1 256Kx1 Z01M1 X0H31 H31M1 H31M1 901ac	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC b?E D WË 7 T b 4 m 2 D017bm KM611001 330 • SnGK CMOS SRAM 1MX1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.)	OCR Scan	D017bm KM611001 KM611001P/J-20: 130mA KM611001P/J-25: 110mA KM611001P/J-35: 100mA KM611001P: 28-pin	PDF
H31M1 Abstract: EDI8M11024C Text: EDI8M11024C ^E D I Electronic D »*lgn i Inc. High Speed Megabit SRAM Module railDiOIMmf 1Mx1 Static RAM CMOS, High Speed Module Features The EDI8M11024C is an extremely high density, 1024Kx1 bit, high speed Static RAM module con structed using four 256Kx1 Static RAMs in leadlesschip	OCR Scan	EDI8M11024C EDI8M11024C 1024Kx1 256Kx1 mod35 Z01M1 XQH31 H31M1	PDF
a810c Abstract: EDI811024CS Text: EDI811024CS m D \ Electronic D lg n I n c * High Speed Megabit Monolithic SRAM 1Mx1 Static RAM CMOS, High Speed Monolithic ] i D[ Features The EDI811024CS is an extremely high density, 1024Kx1 bit, high speed Static RAM designed for use in systems where fast computation, low power, and board	OCR Scan	EDI811024CS EDI811024CS 1024Kx1 MIL-STD-883, A17-A19 A6-A16 a810c	PDF
23C1001 Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000 Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5	OCR Scan	KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000	PDF
Untitled Abstract: No abstract text available Text: ^EDI EDI811024CS Electronic D««igns In « High Speed Megabit Monolithic SRAM O iF M M K O > i 1Mx1 Static RAM CMOS, High Speed Monolithic Features The EDI811024CS is an extremely high density, 1024Kx1 bit CMOS Static 1024Kx1 bit, high speed Static RAM designed for use in Random Access Memory	OCR Scan	EDI811024CS EDI811024CS 1024Kx1 A0-A19	PDF

EDI8M11024C Abstract: No abstract text available Text: ^E D I EDI8M11024C Electro nic D e s i g n i Inc. High Speed Megabit SRAM Module raiUMDMÂIHIY 1Mx1 Static RAM CMOS, High Speed Module Features The EDI8M11024C is an extremely high density, 1024Kx1 bit, high speed Static RAM module con structed using four 256Kx1 Static RAMs in leadless chip	OCR Scan	EDI8M11024C EDI8M11024C 1024Kx1 256Kx1	PDF
Untitled Abstract: No abstract text available Text: 1/1/HITE /MICROELECTRONICS 1Mx1 SRAM MONOLITHIC WMS1M1-XDEX ADVANCED* FEATURES PIN CONFIGURATION TO P VIEW NCC 4 A13C 5 A14C 6 A15C 7 NCC 8 A16C 9 A 1 7 C 10 A 1 8 C 11 A 1 9 C 12 N C C 13 Q C 14 W E C 15 G N D C 16 A cce ss Times 20, 25, 35ns • M IL-STD -883 Compliant Devices Available	OCR Scan		PDF
339 Motorola Abstract: 128kx8 1MX1 1MX4 motorola 32kx8 Text: Asynchronous CMOS Fast SRAMs 3.3 Volt Supply MCM6306D 32Kx8 . 3-112 5 Volt Supply MCM6205D MCM6206BA MCM6206D MCM6208C MCM6209C MCM6226A MCM6226B 32Kx9 .3-3 32Kx8 . 3-9	OCR Scan	MCM6306D 32Kx8 MCM6226BA MCM6226BB MCM6227A MCM6227B MCM6229A MCM6229B MCM6229BA MCM6246 339 Motorola 128kx8 1MX1 1MX4 motorola 32kx8	PDF
synchronous sram Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832 Text: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK	OCR Scan	EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C synchronous sram 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832	PDF
1mx1 DRAM Abstract: No abstract text available Text: ADVANCED 3 HZ D E L E C T R O N I C PKG a 02547=13 0 0 0 0 3 5 4 2 E3AEP AEPDX1M8LB DYNAMIC RAM MODULE 7~-¥6-e3 '-/$ > > 1,048,576 x 8 Organization > > Low 0.510 in ch stand-off heig ht 0.350 using 90 degree lead pins > > 2 8 p in SIP is shorter in length than standard m odules	OCR Scan		PDF
64kx4 DRAM Abstract: SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256 Text: EDI8833C/LP/P ^E D I Electronic Designs Inc. High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic u m m Features The EDI8833C/LP/P is a high speed, high perform ance, low power, 262,144bit C M O S Static R A M orga 32Kx8 bit C M O S Static	OCR Scan	EDI8833C/LP/P 32Kx8 EDI8833C/LP/P 144bit 32Kx8. MIL-STD-883, 64Kx4 EDI8466CB. 256Kx1 EDI81256C/LP/P. 64kx4 DRAM SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256	PDF
RAS 0510 Abstract: dynamic ram module Text: AEPDX1M8LB DYNAMIC RAM MODULE > > 1,048,576 x 8 Organization > > Low 0.510 inch stand-off height 0.350 using 90 degree lead pins > > 2 8 pin SIP is shorter in length than standard modules > > Single +5V power supply > > TTL compatible 1 MEGAWORD BY 8 BIT LOW	OCR Scan		PDF
SOJ 44 Abstract: 1MX1 KM6865 Text: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001	OCR Scan	KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL SOJ 44 1MX1 KM6865	PDF
HM6206 Abstract: 32Kx64 Text: SRAMs Cache Synchronous SRAMs P ackage P a rt N um b e r D e n i lt y O r g a n iz a tio n C y c le tim e / A c c e « » tim e (n e ) Max. Key F e a tu re LQ FP HM62C3232 1M 32K x32 9/10/12/15 Pipeline 100 HM62C3232FP-7 1M 32K x32 7 Pipeline 100 HM62C3232FP-8L	OCR Scan	HM62C3232 HM62C3232FP-7 HM62C3232FP-8L HM62D3232 HM62D3232FP-7 HM67B3632 HM67S3632 HB66C3264BA HB66D3264BA HB66C6464BA HM6206 32Kx64	PDF
9660t Abstract: LH521008 Text: SHARP b OE CORP D • Ô1ÔD7TÔ DDDTME? 302 «SRPJ 'T - H C - 2 3 - / O LH101504 LH101510 . R E L I M I N A Ü 3 H 1 3 C5 WF A,s Au Ai 3 R Y High-Speed BiCMOS 1M 1M xi ECL Static RAM ■ Description ■ The LH101504/LH101510 is a 256K/1M-bit high speed	OCR Scan	LH101504 LH101510 LH101504/LH101510 256K/1M-bit 742S6 9660t LH521008	PDF

1MX1 SRAM Search Results

1MX1 SRAM Result Highlights (5)

1MX1 SRAM Datasheets Context Search

TC5118160

1Mx1 SRAM

Memories

27c eeprom

65656F

28-pin SOJ SRAM

Untitled

KMCJ532512

H31M1

Untitled

H31M1

a810c

23C1001

Untitled

EDI8M11024C

Untitled

339 Motorola

synchronous sram

1mx1 DRAM

64kx4 DRAM

RAS 0510

SOJ 44

HM6206

9660t