IN 5402 rectifier
Abstract: No abstract text available
Text: 1N5400 thru 1N5408 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 200 A IR 5.0 µA VF 1.2 V Tj max. 150 °C DO-201AD Features • Low forward voltage drop • Low leakage current
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1N5400
1N5408
DO-201AD
DO-201AD,
UL-94V-0
J-STD-002B
MIL-STD-750,
DO-204AL
DO-41)
28-Apr-05
IN 5402 rectifier
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IN 5402 rectifier
Abstract: 1N5400 1N5408 J-STD-002B Diodes 1n 5404 5407 1N54
Text: 1N5400 thru 1N5408 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 200 A IR 5.0 µA VF 1.2 V Tj max. 150 °C DO-201AD Features • Low forward voltage drop • Low leakage current
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1N5400
1N5408
DO-201AD
DO-201AD,
UL-94V-0
24-May-05
IN 5402 rectifier
1N5408
J-STD-002B
Diodes 1n 5404
5407
1N54
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Untitled
Abstract: No abstract text available
Text: Diodes DIP Type 3.0A Rectifier 1N5400-1N5408 Features Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 200A Peak Low Reverse Leakage Current MaximumRatingsandElectricalCharacteristics @ TA = 25 Parameter Symbol
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1N5400-1N5408
10RENT
1N5400
1N5405
1N5406
1N5408
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1N5400
Abstract: 1N5408
Text: 1N5400 . 1N5408 3 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-201AD Plastic Voltage 50 to 1000 V. Current 3.0 A. at 105°C. 9.1 ± 0.3 62.5 ± 0.5 • Low cost Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.
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1N5400
1N5408
DO-201AD
1N5400
1N5408
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Untitled
Abstract: No abstract text available
Text: 1N5400 - 1N5408 SILICON RECTIFIER DIODES DO - 201AD PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 1.00 25.4
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1N5400
1N5408
201AD
DO-201AD
UL94V-O
MIL-STD-202,
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1N5400
Abstract: 1N5408
Text: 1N5400 - 1N5408 SILICON RECTIFIER DIODES DO - 201AD PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 1.00 25.4
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1N5400
1N5408
201AD
DO-201AD
UL94V-O
MIL-STD-202,
1N5408
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1N5400
Abstract: 1N5408 A-405
Text: LESHAN RADIO COMPANY, LTD. 1N5400 thru 1N5408 1.Feature & Dimensions * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique * Low reverse leakage * High forward surge capability
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1N5400
1N5408
DO-201AD,
MIL-STD-750,
DO-201AD
DO-41
DO-15
26/tape
1N5408
A-405
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diode 1N540x
Abstract: No abstract text available
Text: 1N5400 – 1N5408 3.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data
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1N5400
1N5408
DO-201AD,
MIL-STD-202,
DO-201AD
diode 1N540x
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1N5408 Diode 1N5408
Abstract: diode 1N5408 specifications DIODE 1N5402 dc 1N540x Diode 1n5400 diode 1N540x diode 1n5408 diode 1n5401 1n5408 wte diode 1n5402
Text: 1N5400 – 1N5408 WTE POWER SEMICONDUCTORS Pb 3.0A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-201AD, Molded Plastic
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1N5400
1N5408
DO-201AD,
MIL-STD-202,
DO-201AD
1N5408 Diode 1N5408
diode 1N5408 specifications
DIODE 1N5402 dc
1N540x
Diode 1n5400
diode 1N540x
diode 1n5408
diode 1n5401
1n5408 wte
diode 1n5402
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Untitled
Abstract: No abstract text available
Text: 1N5400 – 1N5408 WTE POWER SEMICONDUCTORS Pb 3.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-201AD, Molded Plastic
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1N5400
1N5408
DO-201AD,
MIL-STD-202,
DO-201AD
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diode 1n 5401
Abstract: Diode IN 5404 diode 1n5408 temperature rating 1N5408 Diode 1N5408 1N 5404 diode 1N5400 1N5405 1N5406 1N5408 1N 5400 diode
Text: 3.0A Rectifier COMCHIP www.comchiptech.com 1N5400 thru 1N5408 DO-201AD Reverse Voltage: 50 to 1000V Forward Current: 3.0A Features 1.0 25.4 Min. - Diffused Junction - High Current Capability and Low Forward Voltage Drop - Surge Overload Rating to 200A Peak
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1N5400
1N5408
DO-201AD
DO-201AD,
MIL-STD-202,
1N5405
1N5406
MDS0312006A
diode 1n 5401
Diode IN 5404
diode 1n5408 temperature rating
1N5408 Diode 1N5408
1N 5404 diode
1N5405
1N5408
1N 5400 diode
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1N5402 spice model
Abstract: 1N5408 Diode 1N5408 1n5402 1N5406 diode 1n5408 temperature rating IN 5408 diode 1N5400 1N5400-1N5408 1N5405 Diode 1n5400
Text: 1N5400 - 1N5408 3.0A RECTIFIER SPICE MODELS: 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 Features • · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 200A Peak Low Reverse Leakage Current Plastic Material: UL Flammability
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1N5400
1N5408
1N5401
1N5402
1N5404
1N5406
1N5407
DO-201AD
1N5402 spice model
1N5408 Diode 1N5408
diode 1n5408 temperature rating
IN 5408 diode
1N5400-1N5408
1N5405
Diode 1n5400
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1N5401
Abstract: 1N5404-T DO-201AD 1N5400-1N5408 1N5401-B 1N5402 CT 1N5406 1N5406 1N5407 1N5408 Diode 1N5408
Text: 1N5400 - 1N5408 3.0A RECTIFIER Features • · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop B A Surge Overload Rating to 200A Peak A Low Reverse Leakage Current Lead Free Finish, RoHS Compliant Note 3 C Mechanical Data D
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1N5400
1N5408
DO-201AD
J-STD-020C
MIL-STD-202,
DS28007
1N5400-1N5408
1N5401
1N5404-T
DO-201AD
1N5400-1N5408
1N5401-B
1N5402
CT 1N5406
1N5406
1N5407
1N5408 Diode 1N5408
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1N5406
Abstract: 1N5402 DO-201AD 1n5401 1n5407 DS28007 1N5400-B
Text: SPICE MODELS: 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1N5400 - 1N5408 3.0A RECTIFIER Features • · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop B A Surge Overload Rating to 200A Peak A Low Reverse Leakage Current
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1N5400
1N5401
1N5402
1N5404
1N5406
1N5407
1N5408
DO-201AD
DS28007
1N5400-B
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CB-257
Abstract: BYW 90 1N1581 diodes byw 214200 byw 150 D027A 1N1341B 200A2 1n1342
Text: rectifier diodes < 100 A diodes de redressement < 100 A Types >0 VRRM A (V) 1HOMSON-CSF • fs m 10 ms vF (A) (V) / if max Tj = 175°C 3 A / Tam b = 100°C 1N 1N 1N 1N 1N 1N 5401 5402 5404 5406 5407 5407 S 3 1N 1N 1N 1N GS 5624 5625 5626 5627 5628 3 BVW17- 100
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200A2
CB-197)
80A2s
CB-3171
BYW17-
CB-257)
1N1341B,
CB-33)
CB-257
BYW 90
1N1581
diodes byw
214200
byw 150
D027A
1N1341B
1n1342
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Diode IN 5404
Abstract: diode in 5401 IN 4004 diodes DIODE IN 4002 4002 diode DIODE 4004 diode IN 4004 5401 diode diode N 4007 KDA 1.2
Text: HERRMANN T ^ O I-1 5 KG 4SE J> m 443bS7S 0000123 3 • HRfIN Drahtdioden Lead mounted diodes Diodes à fils Diodentyp V T ype o f d io d e rrm V BR If a v Type de diode 4001 4002 4003 4004 4005 4006 4007 1N 5400 5401 5402 5403 5404 5405 5406 5407 5408 R 250-A
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3b57S
Diode IN 5404
diode in 5401
IN 4004 diodes
DIODE IN 4002
4002 diode
DIODE 4004
diode IN 4004
5401 diode
diode N 4007
KDA 1.2
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iskra diode
Abstract: BY144 BY142 si diode 1N4007 BY143 Diode IN 5404 1N4007 iskra diode 1N 4001 Iskra 11 250 251 4001 1n diode
Text: ISKRA ELECTRONICS INC 5SE D MÔÔ3477 ODOOfiTE 3 T- oi-iS' “r - ot - ¿ 3 Silicijeve usmerjalne diode 1 A f \ ' | I8 9 0 0 0 | Silicon rectifier diodes 1 À \ J Ursm Urrm JpAV •f s m Tip/Type 10 ms V 10 ms (V) 1N4001 e 50 1N4002 a i too 1N4003 ’ .200
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DO-41
DO-27
1N4001
1N4002
1N4003
1N4004
1N4005
1N4007
1N5401Â
1N5406Â
iskra diode
BY144
BY142
si diode 1N4007
BY143
Diode IN 5404
1N4007 iskra
diode 1N 4001
Iskra 11 250 251
4001 1n diode
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diode UN 5402
Abstract: Diode IN 5404 DIODE IN 5408 in 5408 diode DIODE IN 5408 DO27
Text: 1N5400 í¿ Ni iMBTTj» y Microsemi Corp. thru 1N5408 The diode experts SANTA A N A , CA 3A PLASTIC SILICON RECTIFIERS FE A T U R E S Low cost. High current capability. Low leakage. Low forward voltage. High surge capability. JEDEC DO-27 molded plastic case.
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1N5400
1N5408
DO-27
diode UN 5402
Diode IN 5404
DIODE IN 5408
in 5408 diode
DIODE IN 5408 DO27
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54LS04/BCAJC
Abstract: 54LS04 54S04/BCA 54s04 54SCL Signetics 54LS04
Text: Signetics 5404, 54LS04, 54S04 Inverters Hex Inverter Military Logic Products Product Specification FUNCTION TABLE ORDERING INFORMATION INPUT O U T PU T PIN C O N FIG UR ATIO N O RD ER CO DE A Y Ceram ic DIP Figure A 5404/BCA, 54LS04/BCA, 54S04/BCA L H Ceram ic Flat Pack
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54LS04,
54S04
5404/BCA,
54LS04/BCA,
54S04/BCA
54LS04/BDA,
54S04/BDA
5404/BDA
54LS04/B2A,
54S04/B2A
54LS04/BCAJC
54LS04
54s04
54SCL
Signetics 54LS04
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N5399
Abstract: 1n4365 D0201AD 1N4004 or 1N5404 N5397 1N4140 1N4144 1N4007 DO-41 package 1N4145 681000
Text: S C H O T T K Y R EC T IFIER S OptritlfVfl arvd Vrrm lo Mam Vf Type Package <Vo*» An*) (Amp*) (Volt») 1N5817 D O -4 1 20 1.0 25 .4 5 1a 1N5818 D O -4 1 30 1.0 25 055 1N5019 D O -41 40 1.0 25 0.00 S R I 20 D O -41 20 1.0 40 050 SR130 D O -41 30 1.0
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1N5817
DO-41
1N5818
1N5819
SR130
SR140
N5399
1n4365
D0201AD
1N4004 or 1N5404
N5397
1N4140
1N4144
1N4007 DO-41 package
1N4145
681000
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IN4143
Abstract: IN4145 IN4144 IN5406 diode IN5404 in5404 diode in5408 diode IN5406 IN5408 diode in5406
Text: RECTIFIER DIODES, Standard Recovery, Plastic Package Maximum Average Rectified Current at T„ IS I Number l0 Am ps t. ro 1N4139 1N4140 1N4141 I,» (Am ps) V,„ (V o te ) 1. (UAJ Bulk/Reel 200 1.2 5.0 500/1250 inches/m illim eters 100 105 400 600 800 X '
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1N4139
1M4140
1N4141j
1N4142Ã
N4143
N4144
N4145
1N4146
1N5401
N54Q2Ã
IN4143
IN4145
IN4144
IN5406 diode
IN5404
in5404 diode
in5408 diode
IN5406
IN5408
diode in5406
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1.0 k mef 250
Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a
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semi-820
BYX22-400
BYX22-600
BYX22-800
BYX26-60
YX26-150
BYX36-1
BYX36-300
1.0 k mef 250
ME4003
ME4002
MA0411
transistor me6101
transistor BC 172B
2N2959
transistor bf 175
2N5173
2n3072
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SN113
Abstract: No abstract text available
Text: 1SE 0 | fll3fc.b?l 00017tS 7 | SEMIKRON INC seMIKROn _ Ifrm s V rsm | V | 20 A lFAV sin.180;Tamb = 45 °C 3A 1A Types 10 A Types Cmax. Rmln. a HF Cmax. Rmln n HF 6A Types Cmax. HF Rmin. Q 100 1 N 4002 5000 1 1N 5401 10000 0,2 SK 6/01
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00017tS
N4006
N5407
N4007
fll3bb71
S3934:
SO-131
DO-15
SO-182
SN113
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BA 5408
Abstract: JANTX1N974B-1
Text: Zener Regulator Diodes Scottsdale ' Package Outline ; D O-213AA Type SM Scottsdale DO-7 STD Scottsdale DO-35 STD SM I ' Power! Vz Mil Data Spec Sheet ID W , (V) 117 : izt (mA) (n ) 1 Zzk (£1! VR (V> (+/-%) 22.8 5 5 8301 0.4 30 4.2 49 1000 10096 0.4 30 4.2
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O-213AA
DO-35
-213AA
DO-213AA
DO-35
BA 5408
JANTX1N974B-1
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