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    1N1147 JAN Search Results

    1N1147 JAN Result Highlights (2)

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    JM38510/11302BEA Analog Devices DAC08AQ7/38510 JAN 8-BI Visit Analog Devices Buy
    JM38510/11301BEA Analog Devices DAC08Q7/38510 JAN 8-BI IC Visit Analog Devices Buy

    1N1147 JAN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N1147+JAN Defense Electronics Supply Center 67mA Iout, 12kV Vrrm General Purpose Silicon Rectifier Scan PDF

    1N1147 JAN Datasheets Context Search

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    1N1149

    Abstract: 1N1149 JAN 1N1147 1N1147 JAN
    Text: INCH-POUND MIL-S-19500/254B 21 March 2005 SUPERSEDING MIL-S-19500/254A EL 6 February 1968 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, TYPES 1N1147 AND 1N1149, JAN Inactive for new design after 7 June 1999. This specification is approved for use by all Departments


    Original     		PDF MIL-S-19500/254B MIL-S-19500/254A 1N1147 1N1149, MIL-PRF-19500. 1N1149 1N1149 JAN 1N1147 JAN

    Untitled

    Abstract: No abstract text available
    Text: 1N1147+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current67m @Temp (øC) (Test Condition)75 V(RRM)(V) Rep.Pk.Rev. Voltage12k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3.5 V(FM) Max.(V) Forward Voltage60 @I(FM) (A) (Test Condition)50m @Temp. (øC) (Test Condition)50


    Original     		PDF 1N1147 Current67m Voltage12k Voltage60 Current10u Current200u

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


    Original     		PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    SEM 5027A

    Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
    Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor