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    1N23ER Search Results

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    1N23ER Price and Stock

    Advanced Semiconductor Inc 1N23ER

    PIN Diodes 8-12.4GHz NF 7.5dB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1N23ER
    • 1 $74.32
    • 10 $70.61
    • 100 $63.64
    • 1000 $63.64
    • 10000 $63.64
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    Bristol Electronics 1N23ER 6
    • 1 -
    • 10 -
    • 100 -
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    Quest Components 1N23ER 4
    • 1 $96.54
    • 10 $91.713
    • 100 $91.713
    • 1000 $91.713
    • 10000 $91.713
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    MicroWave Technology Inc 1N23ER

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1N23ER 1
    • 1 $115.848
    • 10 $115.848
    • 100 $115.848
    • 1000 $115.848
    • 10000 $115.848
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    1N23ER Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N23ER Advanced Semiconductor Diode Original PDF
    1N23ER MicroMetrics RF Mixer Diode, PN Mixer, UHF|SHF, Case Style Original PDF
    1N23ER Advanced Semiconductor Silicon Point Contact Mixer Diodes Scan PDF
    1N23ER Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1N23ER Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    1N23ER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N23ER

    Abstract: No abstract text available
    Text: 1N23ER SILICON MIXER DIODE PACKAGE STYLE DO- 23R DESCRIPTION: The ASI 1N23ER is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package MAXIMUM RATINGS


    Original     		PDF 1N23ER 1N23ER

    FGFA

    Abstract: 1N23E sft 43 1N23CR 9375MHz 1N23CMR 1N23D 1N23DM 1N23DR 1N23EM
    Text: - 166 - MI J& % a s * 1N23CMR Bn * * * * B£ B£ 0 'S Q1 1N23CR 1N23D 1N23DM 1N23DMR * 1N23DR Bn * 1N23EM B l am * 1N23E * 1N23BMR * 1N23ER * 1N23F * 1N23FM * 1N23FMR * 1N23P8 * 1N23G * 1N23GM * 1N23GMR * 1N23GR * 1N23WD * 1N23WDM * 1N23WE * 1N23WBM * 1N23WF


    OCR Scan     		PDF 1N23CMR 1N23CR 1N23D 1N23DM 1M230MR lN23CÃ ffi14 9375MHz, 1N23DR 1N23E FGFA sft 43 9375MHz 1N23EM

    1N23 diode

    Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
    Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local


    OCR Scan     		PDF

    1N23 diode

    Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
    Text: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for


    OCR Scan     		PDF 1N3205 1N25XX, 1N78X, DMA649X-XXX 1N23 diode 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR

    1N23C

    Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
    Text: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:


    OCR Scan     		PDF

    1N23C diode

    Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR
    Text: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure


    OCR Scan     		PDF DO-22, DO-23 DO-37 ardN21H 1N21HR 1N150 1N160 1N150R 1N160R 1N23C 1N23C diode DIODE ku 1490 1N25 diode 1N26A diode 1N415C 1N4294 1N4603R 1N26BR

    in23c

    Abstract: IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416
    Text: SILICONPOINTCONTACTMIXERDIODES They feature high burnout resistance, low ASI Point Contact Mixer Diodes are designed for applications from UHF through noise figure and are hermetically sealed. They are available in DO-7, DO-22, DO-23 26 GHz. and DO-37 package styles which make


    OCR Scan     		PDF DO-22, DO-23 DO-37 26GHz. 1N26B DO-37 1N26C 30MHz, 1000Hz in23c IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416

    1N23 diode

    Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
    Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure


    OCR Scan     		PDF