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    1N3466 Search Results

    1N3466 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N3466 BKC International 40 V, 500 mA, gold bonded germanium diode Scan PDF
    1N3466 International Semiconductor GENERAL PUROSE DIODE Scan PDF
    1N3466 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N3466 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N3466 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N3466 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N3466 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N3466 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N3466 Semitronics Germanium Diodes / Germanium Rectifiers Scan PDF

    1N3466 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1N3466 Diodes Germanium Diode Military/High-RelN I O Max.(A) Output Current75m V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)200m I(RM) Max.(A) Reverse Current15u @V(R) (V)(Test Condition)30


    Original     		PDF 1N3466 Current75m Voltage40 Current15u Current100u

    1K60

    Abstract: 1K34A Diode Equivalent 1N87 Diode Equivalent 1N34A FDH444 1N270 diode equivalent equivalent components of diode 1N34A 1n3469 1N996 1N645
    Text: Other Diodes Part No. CrossReference Operating Temperature: -65o C to 160 o C Power Dissipation Max. Avg. Rect. Current Peak Voltage Continuous Rev. Current Forward Voltage Max. Reverse Recovery Time Package Pd mW Io(mA) VRRM (V) IR (nA)@VR (v) V F (V)@IF (mA)


    Original     		PDF BA170 BAV17 BAV18 BAV19 BAV20 BAV21 BAX16 BAY71 BAY80 1N645 1K60 1K34A Diode Equivalent 1N87 Diode Equivalent 1N34A FDH444 1N270 diode equivalent equivalent components of diode 1N34A 1n3469 1N996 1N645

    DSAIH0002548

    Abstract: 1N3466
    Text: B K C INTERNATIONAL D3E D | 117T îfl3 □ □□024cl 1 _Type No. 1N3466_ T - * f - * 7 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 "I Hi BKC International


    OCR Scan     		PDF 1N3466_ MIL-S-19500, DSAIH0002548 1N3466

    1Nu5

    Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
    Text: l e m l t r o SEMICONDUCTORS7 " n SemitronicsCorp. INTEX/ SEMITRONICS 'Tz'O I-* 0 7 CORP germanium diodes Max. P tik i H l f ll MM. Farward V o lt« « vo lti Farward Currant <mA) Ravarsa Currant Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m V o tta p


    OCR Scan     		PDF 1N34A 1n38a 1n38b 1n52a 1N55B 1n56a 1n57a 1n58a 1n60a 1n63a 1Nu5 IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128

    D3E diode

    Abstract: germanium diode gold bonded germanium diode 1N3110 "Germanium diode" 1N3287 1N949 117T 1N3125 1N3287W
    Text: B K C INTERNATIONAL 30E D [•■Mi BKC International Electronics Inc. L .,« il X » ■ 0DD033S 5 ■ 1- 0 1-0~7 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE


    OCR Scan     		PDF 1N949 500mA MIL-S-19500, D3E diode germanium diode gold bonded germanium diode 1N3110 "Germanium diode" 1N3287 1N949 117T 1N3125 1N3287W

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    1N34A do-35

    Abstract: 1N34A reverse recovery OA47 AA118 AA143 oa90 AA143 OA90 AA218 1N60 LL 34 1N3467
    Text: B IC C I N T E R N A T I O N A L 30E D • H7nfl3 00003Q0 6 ■ 'T-01-0“7 Q erm anium d i o d e s B B B 3 Type AA117 AA118 AA121 M 123 M 130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 AAZ13 AAZ15 AAZ17 AA218 OA47 OA90 OA180 1N34A 1N55B 1N60 1N87 1N98A 1N100A 1N270


    OCR Scan     		PDF 00003Q0 T-01-0 AA117 AA118 AA121 AA143 AA144 AAY30 AAY32 AAY33 1N34A do-35 1N34A reverse recovery OA47 AA143 oa90 OA90 AA218 1N60 LL 34 1N3467

    OA47 germanium

    Abstract: AA118 AA218 diode aa118 AAZ15 1N695 IN34A OA90 iN87 AA117
    Text: B IC C INTERNATI ONAL 30E D • H 7 n f l 3 00003Q0 6 ■ 'T-01-0“7 Q erm anium d i o d e s B B B 3 Type AA117 AA118 AA121 M 123 M 130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 AAZ13 AAZ15 AAZ17 AA218 OA47 OA90 OA180 1N34A 1N55B 1N60 1N87 1N98A 1N100A 1N270 1N276


    OCR Scan     		PDF AA117 AA118 AA121 AA130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 OA47 germanium AA218 diode aa118 AAZ15 1N695 IN34A OA90 iN87

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82

    1N34A

    Abstract: 1N348 1N34A reverse recovery
    Text: I n ter n a tio n a l 1N34A S e m ic o n d u c to r , I n c . to GERMANIUM GLASS DIODES 1N3773 MAXIMUM RATINGS * \ O p e ra tin g T e m p e ra tu re : -55 °C to +70 °C S to ra g e T e m p e ra tu re : A -55 °C to +1 0 0 °C 2.718 O T DI A * E LE C T R IC A L C H A R A C T E R IS T IC S


    OCR Scan     		PDF 1N34A 1N3773 1N55B 1N34A 1N348 1N34A reverse recovery

    lN34A

    Abstract: Germanium itt
    Text: SEMICONDUCTORS7 " le m lt r o n SemitronicsCorp. 'Tz'O I-*0 7 INTEX/ SEMITRONICS CORP germanium diodes Max. P tik iH lf ll MM. Farward V o lt«« vo lti Farward Currant <mA) Ravarsa Currant (MÂ) Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m Vottap


    OCR Scan     		PDF 1N34A 1N38A 1N388 lN34A Germanium itt

    st178

    Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
    Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment


    OCR Scan     		PDF Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17