3611

Abstract: 1N3611
Contextual Info: 1N3611 thru 1N3614 and 1N3957 Standard STANDARD RECOVERY RECTIFIERS SENSITRON _ SEMICONDUCTOR TECHNICAL DATA AV AI L AB L E AS DATA SHEET 128, REV. A.1 1 N , J AN , J AN T X , J ANT XV

1N3611

Abstract: JAN1N3613 1N3957 melf diode, square 1N3597 1N3614 Microsemi micronote series 050 JANTX 1N3611 microsemi marking 1n3 1N5614
Contextual Info: 1N3611 thru 1N3614, 1N3957 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “standard recovery” rectifier diode series is military qualified to MIL-PRF19500/228 and is ideal for high-reliability applications where a failure cannot be

Contextual Info: 1N3611GP thru 1N3614GP and 1N3957GP Vishay General Semiconductor Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 200 V to 1000 V IFSM 30 A IR 1.0 µA VF 1.0 V Tj max. 175 °C d* e t n Pate * Glass-plastic encapsulation

Contextual Info: 1N3614 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current2.0 @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)750m @Temp. (øC) (Test Condition)25

avalanche 1n3613

Abstract: 1N3612 JANTX 1N3613 1N3957 1N3611 1N3612 1N3614 1N3613 JANTX diode power JANTX 1N3613
Contextual Info: 1N3611, 1N3612, 1N3613, 1N3614, 1N3957 Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data VR = IO = trr = V = F ‹ ‹ ‹ ‹ ‹ 200 - 1000 V 1.0A 2µS 1.1V Low reverse leakage current

Contextual Info: 1N3611GP THRU 1N3614GP AND 1N3957GP MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Voltage - 200 to 1000 Volts Current -1.0 Ampere FEATURES ~ ♦ High temperature metallurgically bonded con­ structed rectifiers ♦ Plastic package . has Underwriters Lab^

Contextual Info: 1N3611GP THRU 1N3614GP AND 1N3957GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 1.0 Ampere PO-2Q4A I ¿O FEATURES 0.707 2.7 0.080 {2-0} 0.160(4.1) ♦ Plastic package has Underwriters Laboratory Flammabiiity Classification 94V-0

1N3613

Abstract: 1N3611 JANTX JANTX1N3611 1N3613 JANTX 1N3612 PIV RATING 14 V DIODE JANTX1N3612 1N3611 1N3614 720V
Contextual Info: RECTIFIERS JAN & JA N TX 1N3611-1N3614 Military Approved, 1 Amp, General Purpose FEATU RES DESCRIPTIO N • Q u a lifie d to MIL-S-19500/228 T h is s e rie s o f M I L a p p ro v e d J A N and • Continuous Rating: 1A • Surge Rating: 30A • PIV: to 800V

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

JANTX, JX, JAN

Abstract: 1N3613 1N3611 1N3611EG1 1N3612 1N3614EG1 1N3957EG1 DO-204AL RY 228
Contextual Info: JAN and JANTX 1N3611EG1 thru 1N3614EG1 and 1N3957EG1 Vishay Semiconductors Patented* formerly Glass Passivated Rectifiers 1.0 25.4 MIN. Features • Qualified to MIL-PRF-19500/228 • Class 1 high temperature metallurgically bonded construction brazed > 600°C

1N3613

Contextual Info: RECTIFIERS JAN & JANTX1N3611-1N3614 Military Approved, 1 Amp, General Purpose FEATURES • Qualified to MIL-S-19500/228 • Continuous Rating: 1A • Surge Rating: 30A • PIV: to 800V DESCRIPTION This series of M IL approved JAN and JANTX general purpose la m p rectifiers are

Contextual Info: 1N3611GP thru 1N3614GP & 1N3957GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction d* e t n e Pat *Glass Encapsulation technique is covered by

1N3611 JAN

Abstract: 1N3957 1N3611 1N3613 1N3612 1N3614 N3614 N3957
Contextual Info: E E 1N3611 thru 1N3614,1IN3957 D MILITARY R EC T IF IER S FEATURES • • • • • • . Microminiature package. Voidless hermetically sealed glass package. Triple layer passivation. Metallurgical^ bonded. Standard recovery. PIV to 1,000 volts. TX/TXV types available per M IL -S -1 9500/228.

1N3614

Abstract: 1N3957 sx361
Contextual Info: 1N3611 thru 1N3614 and 1N3957 Standard STANDARD RECOVERY RECTIFIERS SENSITRON _ SEMICONDUCTOR TECHNICAL DATA AV AI L AB L E AS DATA SHEET 128, REV. A.1 1 N , J AN , J AN T X , J ANT XV

p15j

Abstract: p10j D0-204AC 1N492GP GP20AG P1N5 P20J p10b GP30AG P10K
Contextual Info: QUICK GUIDE TO SUPERECTIFIERS •RQP02 TYPE GP02 -12E thru -20E CASE BA157GP* GL34A GP250 -20 thru -1 thru -4 -40 D 0204AL D 0204AL D 0204AL CASE G P06A GP10A 1N3611GP thru thru thru thru thru BY159GP GL34J ‘ RG L34J G P08J GP10M 1N3614GP 1N4007GP 1N4249GP *1N4937GP

1N3957

Abstract: 1N3613 1N3611 1N3612 1N3614
Contextual Info: 1N3611 1N3612 1N3613 1N3614 1N3957 SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 128, REV. A SJ SV SX HERMETIC AXIAL LEAD RECTIFIER DESCRIPTION: A 200/400/600/800/1000 VOLT, 1 AMP, 5000 NANOSECOND RECTIFIER. All ratings are at TA = 25oC unless otherwise specified.

1N3611GP

Contextual Info: 1N3611GP thru 1N3614GP and 1N3957GP Vishay General Semiconductor Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 200 V to 1000 V IFSM 30 A IR 1.0 µA VF 1.0 V Tj max. 175 °C d* e t n Pate * Glass-plastic encapsulation

1N39

Contextual Info: 1N3611GP thru 1N3614GP and 1N3957GP Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers * d e t n Features e t a P 1.0 25.4 MIN. DO-204AL (DO-41) Rev. Voltage 200 to 1000V Forward Current 1.0A • Plastic package has Underwriters Laboratories

JANTX, JX, JAN

Abstract: 1N3957 JANTX1N3611 JANTX 1N3613 1N3957 JANTX 1N3611 1N3612 1N3613 1N3614 DO-204AL
Contextual Info: JAN and JANTX 1N3611 thru 1N3614 and 1N3957 Vishay Semiconductors Patented* formerly Glass Passivated Rectifiers 1.0 25.4 MIN. Features • Qualified to MIL-PRF-19500/228 • Class 1 high temperature metallurgically bonded construction brazed > 600°C • 1.0 ampere operation at TA = 55°C with no thermal runaway

Contextual Info: 1N3614UR+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current1 @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.30 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1 @Temp. (øC) (Test Condition)25

1N3957

Abstract: 1N3614
Contextual Info: 1N3611 1N3612 1N3957 1N3613 1N3614 GLASS PASSIVATED SILICON RECTIFIERS 1.0 AMP, 200 THRU 1000 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N3611 thru 1N3614, and 1N3957 are hermetically sealed, glass passivated, general purpose silicon rectifiers ideal for

1N3611GP

Abstract: 1N3614GP 1N3957GP DO-204AL 3614G 3613G
Contextual Info: 1N3611GP THRU 1N3614GP AND 1N3957GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts FEATURES T E D * DO-204AL N 1.0 25.4 MIN. E P A T Forward Current - 1.0 Ampere 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN.

10CR

Abstract: 1N3611 1N3612 1N3613 1N3614
Contextual Info: Electrical Characteristics At Ta=25°C, Unless Otherwise Specified IR at V R Type No. max (MA min (V) PIV VF max (V) IF IO IFM (V) (mA) (A) (mA) @ 1N3611 1 200 240 1.1 1000 1 20 1N3612 1 400 480 1.1 1000 1 20 1N3613 1 600 720 1.1 1000 1 20 1N3614 1 800 960

1N3611GP

Abstract: 1N3614GP 1N3957GP DO-204AL 3611GP 3613GP 1N3611
Contextual Info: 1N3611GP thru 1N3614GP and 1N3957GP Glass Passivated Junction Rectifier DO-204AL DO-41 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. Features * d e t n e Pat Reverse Voltage 200 to 1000 V Forward Current 1.0 A • Plastic package has Underwriters Laboratories