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    1N3886 Search Results

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    1N3886 Price and Stock

    New Jersey Semiconductor Products, Inc. 1N3886

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 1N3886 350 1
    • 1 $8.25
    • 10 $6.1875
    • 100 $4.95
    • 1000 $4.7437
    • 10000 $4.7437
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    New Jersey Semiconductor Products Inc 1N3886

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1N3886 280
    • 1 $11
    • 10 $11
    • 100 $6.875
    • 1000 $6.6
    • 10000 $6.6
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    1N3886 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N3886 General Diode 12A Iout, 200V Vrrm Fast Recovery Rectifier Scan PDF
    1N3886 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N3886 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N3886 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N3886 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N3886 Semicon Components 12A Iout, 200V Vrrm Fast Recovery Rectifier Scan PDF
    1N3886 Semitronics 12A Iout, 200V Vrrm Fast Recovery Rectifier Scan PDF
    1N3886 Solid State Devices 12A Iout, 200V Vrrm Fast Recovery Rectifier Scan PDF
    1N3886+JAN Defense Electronics Supply Center 12A Iout, 200V Vrrm Fast Recovery Rectifier Scan PDF
    1N3886+JANTX Defense Electronics Supply Center 12A Iout, 200V Vrrm Fast Recovery Rectifier Scan PDF
    1N3886+JANTXV Defense Electronics Supply Center 12A Iout, 200V Vrrm Fast Recovery Rectifier Scan PDF

    1N3886 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N3886+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current12 V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time200n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.4


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    1N3886 Current12 Voltage200 Time200n Current25u StyleDO-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N3886+JANTXV Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current12 V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time200n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.4


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    1N3886 Current12 Voltage200 Time200n Current25u StyleDO-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N3886 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current12 V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time200n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)12


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    1N3886 Current12 Voltage200 Time200n Current25u StyleDO-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N3886+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current12 V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time200n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.4


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    1N3886 Current12 Voltage200 Time200n Current25u StyleDO-10 PDF

    CP CLARE hg 1004

    Abstract: 1N3888 UNF-2B 01903 1N3886 clare mercury-wetted relay hgp1004 1n3880r 1N3884 diode 1n3893
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 November 1999. INCH-POUND MIL-PRF-19500/304D 15 August 1999 SUPERSEDING MIL-S-19500/304C 6 June 1989 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY


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    MIL-PRF-19500/304D MIL-S-19500/304C 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893, 1N3890R, 1N3891R, CP CLARE hg 1004 1N3888 UNF-2B 01903 1N3886 clare mercury-wetted relay hgp1004 1n3880r 1N3884 diode 1n3893 PDF

    1N3888

    Abstract: 1N3886 1N3886 JANTX 1n3890 datasheet 1N3885 1N3890 1N3890R 1N3891 1N3891R 1N3893
    Text: This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly different in format due to electronic conversion processes. Actual technical content will be the same. The documentation and process conversion measures


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    MIL-PRF-19500/304D 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893, 1N3890R, 1N3891R, 1N3893R 1N3888 1N3886 1N3886 JANTX 1n3890 datasheet 1N3885 1N3890 1N3890R 1N3891 1N3891R 1N3893 PDF

    tt 3043

    Abstract: cp clare relay hg 1002 sol 4011 be 1N3888 clare mercury-wetted relay 1n3884 1N3890 clare mercury relay z037 1N3885
    Text: MIL SPECS I C J Q C m a i H S OODBTOS 1 | MIL-S-19500/304B AMENDMENT 3 11 Auqust 1987 WOTSTDTfre-AMENDMENT 2 8 July 1985 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST-RECOVERY TYPES 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893,


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    MIL-S-19500/304B 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893, 1N3890R, 1N3891R, 1N3893R tt 3043 cp clare relay hg 1002 sol 4011 be 1N3888 clare mercury-wetted relay 1n3884 1N3890 clare mercury relay z037 1N3885 PDF

    MIL-S-19500

    Abstract: MIL-S-19500-507 1N538 1N3189 JAN 1N3190 JAN1N3189 JAN1N538 1N3190 JAN JAN1N3190 1n547 equivalent
    Text: MILITARY DEVICES The following table lists the device types available from Semicon Components Inc. which are manufactured and tested in accordance with the requirements of MIL-S-19500 Revision "G” and the appropriate indicated detail specification. TYPE NUMBER


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    MIL-S-19500 1N538 1N540 1N547 1N560 1N561 1N1124A& 1N1126AS 1N1128A& 1N3649 MIL-S-19500-507 1N3189 JAN 1N3190 JAN1N3189 JAN1N538 1N3190 JAN JAN1N3190 1n547 equivalent PDF

    1N3860

    Abstract: 1N3861 12A-10F
    Text: HIGH SPEED SWITCHING TYPES STUD BASE RECTIFIERS l0 RATINGS TO 30.0 AMPERES FEATURES: DESCRIPTION • Hermetic Seal • Metallurgical^ Bonded • High Temperature Operation These hermetically sealed rectifiers can be used in switching power supply and regulators. High speed and the availability of high voltage


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    6A10F 12A6F 12A0F 12A10F 20A6F 20ASF 20A10F 30A6F 30ABF 30A10F 1N3860 1N3861 12A-10F PDF

    vacuum tube 6z4

    Abstract: 5Y4 tube 1N2637 1N4142 1N1238 17ax4 tube 6AX5 17AX4 1N2631 10s100
    Text: INTEX/ SEMITRONICS CORP 27E D • HfltlSMb 0000302 ñ I semitron hot line t discrete devices o i-oi - TOLL FREE NUMBER 800-777-3960 r - 3 3-2 3 special package silicon rectifiers conrd stud mounted fast recovery silicorfrèctifiers C*M DO-27 case style Maxim um


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    DO-27 1N3885 DO-10 1N3886 1N3887 1N2632 INI262 12AX4, vacuum tube 6z4 5Y4 tube 1N2637 1N4142 1N1238 17ax4 tube 6AX5 17AX4 1N2631 10s100 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


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    A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82 PDF

    Diode DO12

    Abstract: 1N3875 1N3878 1N3874 1N3879 1N3880 1N3883 05g100 do12
    Text: 3869720 GENERAL D I O D E CORP g 6D GENERÄL DIODE CORP fit. 00331 D DE | 3 0 ^ 7 5 0 D000331 0 | FAST RECOVERY RECTIFIERS o * Ä % 0 ‘S TYPE w » l y , —- y 50 100 200 *300 400 6 @ 100 6 @ 100 6 @ 100 6 @ 100 6 @ 100 1.4 @ 6 1.4 @ 6 1.4 @ 6 1.4 @ 6 1.4 @ 6


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    1N3874 1N3S75 1N387S Do-10 1N3B77 1N3878 DO-10 1N3879 1N3880 Diode DO12 1N3875 1N3883 05g100 do12 PDF

    1N3963C

    Abstract: 1n3868 12A6F 1N3682 1N3956 1N3958C 1N3959 1N3959C 1N3913 JAN 1N3960C
    Text: S E N I CO N C O M P O N E N T S INC ' ESE D • 0 1 3 5 1 5 7 OOODflMl M ■ HIGH SPEED STUD 1Q RATIN FEATURES: DESCRIPTION These hermetically sealed rectifiers can be used in switching power supply and regulators. High speed and the availability of high voltage


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    909it: A-30V 1N3900 1N3901 1N3902 1N3903 1N3963C 1n3868 12A6F 1N3682 1N3956 1N3958C 1N3959 1N3959C 1N3913 JAN 1N3960C PDF

    1N5171

    Abstract: 1n5625 piv MR1215SL 1N5172 1N5198 1N5199 1N5201 1N5173 1M3886 1N3768
    Text: o o GENERAL PURPOSE RECTIFIERS ADC CASE 1A 2A A 5us C 5us C 5us 1N5170: 1NS171 1N5172 D 5us 1N5197 1N4517 1N5199 1N5624 1N5550 SPD546A 1N4245 1N5614 1N5059 12A 35A 100A DO-4 5us 1N1199A DO-5 5us 1N1183 G 5us 1N1124A 1N1200A 1N1201A 1N1202A 1N1184 1N1185 1N1186


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    1N5170: 1N5171 1N5197 1N1199A 1N1183 1N5172 1N5198 1N1200A 1N1184 1N1201A 1n5625 piv MR1215SL 1N5198 1N5199 1N5201 1N5173 1M3886 1N3768 PDF

    1N1262

    Abstract: 1N126 1N1239 1N2632 1N SCHOTTKY 5A 1n3903 diode MPD201
    Text: discrete devices SEMICONDUCTORS je m ltr o n ic r S e m itro n ic s C o rp . special package silicon rectifiers stud mounted fast recovery silicon rectifiers sw l ^ special assemblies C »-M a* -«• M axim um A ve ra g e M axim u m A verage Fo rw a rd Reverse


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    1N3886 1N3889 1N3901 1N3903 1N1262 1N126 1N1239 1N2632 1N SCHOTTKY 5A 1n3903 diode MPD201 PDF

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


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    A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17 PDF

    1N3865

    Abstract: 1N3901 1N3958
    Text: HIGH SPEED SWITCHING TYPES STUD BASE RECTIFIERS lQ RATINGS TO 30.0 AMPERES FEATURES: DESCRIPTION •Hermetic Seal •Metallurgical^ Bonded •High Temperature Operation These hermetically sealed rectifiers can be used in switching power supply and regulators. High speed and the availability of high voltage


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    1N3958 1N3958C 1N3959 1N3959C 1N3960 1N3960C 1N3961 1N3961C 1N3962 1N3962C 1N3865 1N3901 PDF