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    Motorola Mobility LLC 1N4997

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    Bristol Electronics 1N4997 250 1
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    New Jersey Semiconductor Products, Inc. 1N4997

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    Motorola Semiconductor Products 1N4997

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    New Jersey Semiconductor Products Inc 1N4997

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    Quest Components 1N4997 103
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    1N4997 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N4997 General Diode Lead Mounted Silicon Power Rectifiers Scan PDF
    1N4997 Microsemi Silicon Rectifiers Scan PDF
    1N4997 Microsemi Silicon Rectifier Scan PDF
    1N4997 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N4997 Motorola The European Selection Data Book 1976 Scan PDF
    1N4997 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N4997 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N4997 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N4997 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N4997R Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    1N4997 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1N4997

    Abstract: LM390
    Text: 1N4997 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N4997 Availability Online Store


    Original     		1N4997 1N4997 STV3208 LM3909N LM390 PDF

    MRF422

    Abstract: 170 680 pF arco 469 MRF422D 1N4997
    Text: MOTOROLA Order this document by MRF422/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF422 Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics —


    Original     		MRF422/D MRF422 MRF422/D* MRF422 170 680 pF arco 469 MRF422D 1N4997 PDF

    Stackpole 57-9322-11

    Abstract: EB-27 motorola 2N6368 ecom-2989 Granberg Design of H. F. Wideband Power Transformers AN593 Broadband Linear Power Amplifiers Using Push-Pull Transistors EB-32 complementary symmetry amplifier Indiana general ferrite core 2N6367
    Text: Order this document by AN593/D MOTOROLA SEMICONDUCTOR 33333 APPLICATION NOTE AN593 BROADBAND LINEAR POWER AMPLIFIERS USING PUSH-PULL TRANSISTORS Prepared by: Helge Granberg RF Circuits Engineering INTRODUCTION Linear power amplifier operation, as used in SSB


    Original     		AN593/D AN593 Stackpole 57-9322-11 EB-27 motorola 2N6368 ecom-2989 Granberg Design of H. F. Wideband Power Transformers AN593 Broadband Linear Power Amplifiers Using Push-Pull Transistors EB-32 complementary symmetry amplifier Indiana general ferrite core 2N6367 PDF

    Transistor J550

    Abstract: VK200-20/4B choke vk200 input output npn 547 transistor "30 mhz" driver Amplifier vk200 1N4997 2204B MRF426 J550
    Text: Order this document by MRF426/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics —


    Original     		MRF426/D MRF426 Transistor J550 VK200-20/4B choke vk200 input output npn 547 transistor "30 mhz" driver Amplifier vk200 1N4997 2204B MRF426 J550 PDF

    MRF448

    Abstract: 1N4997 MRF448 equivalent
    Text: MOTOROLA Order this document by MRF448/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor MRF448 Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.


    Original     		MRF448/D MRF448 MRF448/D* MRF448 1N4997 MRF448 equivalent PDF

    adc 809

    Abstract: MRF429 arco 469 1N4997 EQUIVALENT FOR J175 TRANSISTOR j115 Transistor MRF429
    Text: Order this document by MRF429/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF429 Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.


    Original     		MRF429/D MRF429 adc 809 MRF429 arco 469 1N4997 EQUIVALENT FOR J175 TRANSISTOR j115 Transistor MRF429 PDF

    CASE-211-11 MRF421

    Abstract: adc 809 MRF421 equivalent ferroxcube ferrite beads mallory 150 series 1N4997 MRF421
    Text: Order this document by MRF421/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF421 Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP


    Original     		MRF421/D MRF421 CASE-211-11 MRF421 adc 809 MRF421 equivalent ferroxcube ferrite beads mallory 150 series 1N4997 MRF421 PDF

    1N4719

    Abstract: 1n4999 1N4997 1N4721 1N5002 1N4720 k 0046 lta 601
    Text: 1N4719 thru 1N4725 1N4997 thru 1N5003 M M O T O R O L A S IL IC O N R E C T IF IE R S 3 .0 A M P E R E S 5 0 - 1 0 0 0 VOLTS D IFF U S E D J U N C T IO N LEAD M O UNTED POWER RECTIFIERS . h a v in g lo w fo rw a rd voltage drop an d h e rm e tic m e ta l packages.


    OCR Scan     		1N4719 1N4725 1N4997 1N5003 1n4999 1N4721 1N5002 1N4720 k 0046 lta 601 PDF

    1n5003

    Abstract: 1N4720 1N5001 1N4719 1n4724 1N4998 1N4723 1N4997 1N5002 1N4722
    Text: Silicon Rectifiers 1N4719-1N4725,1N4 9 9 7 -1 N5003 Dim. Inches Minimum — A B C D E r 1N4997-1N5003 M illim e te r Maximum Minimum -.980 -.046 - .450 -.300 .056 .350 _ Maximum Notes 11.43 - Dia. 24.89 1.17 7.62 1.42 8.89 Dia. Dia. -


    OCR Scan     		4719-1N 4997-1N 1N4997-1N5003 1N4719-1N5003 1N4719, 1N4997 1N4720, 1N4998 1N4721, 1N4999 1n5003 1N4720 1N5001 1N4719 1n4724 1N4723 1N5002 1N4722 PDF

    1N4719A

    Abstract: 1n5002
    Text: Silicon Rectifiers D im . In c h e s M in im um !1t. .046 .300 .056 .350 - .960 .031 .145 -.035 .165 - N o te s 11.43 - Dia. 24.89 1.17 7.62 1.42 8.89 Dia. - 24.38 .79 3.68 Dia. -.89 4.19 Dia. > O- r A 1N4719— 1N4725 1N4997-1N5003


    OCR Scan     		1N4719â 1N4725 1N4997-1N5003 1N4719, 1N4720, 1N4721, 1N4722, 1N4723, 1N4724, 1N4725, 1N4719A 1n5002 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    A1W TRANSISTOR

    Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
    Text: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201


    OCR Scan     		403SE 1N1183 1N1615 1N3743 1N4006 1N5002 1N1185 1N1616 1N3744 1N4007 A1W TRANSISTOR N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822 PDF

    MRF448

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF448 The RF Line NPN Silicon RF Power Transistor . . . designed primarily tor high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics


    OCR Scan     		MRF448 MRF448 PDF

    MRF429MP

    Abstract: MRF429-MP MRF429 MRF-429
    Text: MOTOROLA SEM IC O N D U C T O R MRF429 MRF429MP TECHNICAL DATA The RF Line 150 W LINEAR 30 MHz RF POWER TRANSISTORS N P N SILIC O N NPN SILICON RF POWER TRANSISTORS . . d e s ig n e d p r im a rily fo r h ig h -v o lt a g e a p p lic a t io n s a s a h ig h p o w e r lin e a r a m p lifie r fro m 2.0 to 3 0 M H z . Id e a l fo r m a r in e a n d


    OCR Scan     		MRF429 MRF429MP MRF429, MRF429MP MRF429-MP MRF-429 PDF

    2443 MOTOROLA transistor

    Abstract: High-Power NPN Silicon Power Transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP Minimum Gain = 10 dB


    OCR Scan     		ACTERISTI/16 56-590-65/3B MRF421 2443 MOTOROLA transistor High-Power NPN Silicon Power Transistor PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    CQ 20.000

    Abstract: MRF421 equivalent MRF421 1N4997
    Text: M í ir l\ z i MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP


    OCR Scan     		MRF421 150mA CQ 20.000 MRF421 equivalent MRF421 1N4997 PDF

    transistor Bf 966

    Abstract: MRF486 2204B 1N4997 221A-04 RF POWER TRANSISTOR NPN MOTOROLA LINEAR HF arco 429
    Text: MO T O R O L A SC XSTRS/R 4bE T> F b3b72S4 00=14703 S MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF486 The R F Line NPN SILICON RF POWER TRANSISTOR 40 W (PEP) - 30 MHz . . d e s ig n e d p rim a rily fo r ap p licatio n as a h ig h -p o w e r linear a m p lifie r fro m 1.5 to 30 M H z, in single s id eb an d m o b ile , m a rin e


    OCR Scan     		MRF486 O-220AB b3b72S4 transistor Bf 966 MRF486 2204B 1N4997 221A-04 RF POWER TRANSISTOR NPN MOTOROLA LINEAR HF arco 429 PDF

    1NU7

    Abstract: 1N2487 1N1492 1N2508 IN400T 1N1711 equivalent to 1N4001 1N1490 1N2484 1N20B2
    Text: 386 9 7 2 0 GENERAL ~fiï 86D 0 0 3 1 7 DIODE CORP Ï Ë 3öbT?2Q 0D00317 h LE A D M O U N T ED SILICO N POW ER RECTIFIERS P' TYPE y \ % D t -° -a cont'd \ \ r1' | t IH > % 'S 1, •e 25 @ 25 1@ 25 25 @ 25 > 1@ 25 IN 599 1N599A 1N600 1N600A Oo-l Do-1 Oo-l


    OCR Scan     		DDD0317 1N599 1N599A 1N600A 1N602 1N602A 1N603 1NS03A 1N604 1N604A 1NU7 1N2487 1N1492 1N2508 IN400T 1N1711 equivalent to 1N4001 1N1490 1N2484 1N20B2 PDF

    chw marking sot23

    Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
    Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu


    OCR Scan     		PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 PDF