1N5421 Search Results

1N5421 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
1N5421		Unknown	Shortform Semicon, Diode, and SCR Datasheets		Short Form	PDF
1N5421		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF

1N5421 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
1N5421 Abstract: No abstract text available Text: 1N5421 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.150p C1/C2 Min. Capacitance Ratio5.8 V(RRM)(V) Rep.Pk.Rev. Voltage200 Q Factor Min.200 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W).25 Semiconductor MaterialSilicon Package StyleAxial-8	Original	1N5421 Voltage200	PDF
E162344 Abstract: ee25 transformer TOP224 1N5421 PWR-TOP224P EE2425 TOP224P TSD-1405 1N5421B FEE-25 Text: TABLE 1: ELECTRICAL SPECIFICATIONS AT 25 OC FIGURE 1: SCHEMATIC DIAGRAM SWITCHING TRANSFORMER DESIGNED FOR USE WITH POWER INTEGRATIONS TOP224P. REFER TO APPLICATION CIRCUIT OF FIGURE 3. PARAMETER MIN. PRIMARY INDUCTANCE 4-3 VOLTAGE = 0.250Vrms FREQUENCY = 100 KHZ	Original	OP224P. 250Vrms PWR-TOP224P 250Vac 1N5421B TSD-1405 OP224P E162344 ee25 transformer TOP224 1N5421 PWR-TOP224P EE2425 TOP224P TSD-1405 1N5421B FEE-25	PDF
EE2425 Abstract: POL-12017 top224p EE24-25 TOP224 EE25 bobbin 1N5421B ee25 transformer FEI25 PWR-TOP224P Text: TABLE 1: ELECTRICAL SPECIFICATIONS AT 25 O C FIGURE 1: SCHEMATIC DIAGRAM SWITCHING TRANSFORMER DESIGNED FOR USE WITH POWER INTEGRATIONS TOP224P, IS T1 ON RD5 DEMO BOARD . REFER TO APPLICATION CIRCUIT OF FIGURE 3. PARAMETER MIN. PRIMARY INDUCTANCE (2-1) VOLTAGE = 0.250Vrms	Original	OP224P, 250Vrms VTP-01002 50SQ100 PMCU-0220 22mHy POL-12017 VTP-01002 10uHy, EE2425 top224p EE24-25 TOP224 EE25 bobbin 1N5421B ee25 transformer FEI25 PWR-TOP224P	PDF
1N5421-1N5425 Abstract: 1N5718 1N5421 1N5425 tt5200 IN5421 IN5425 IN5717 1N5717 1N5715 Text: TELEDVNE COMPONENTS SÖE D flilT b Q S 1N5/14 1N5715 4N5716 1N5717 1N5718 HIGH-Q-HIGH VOLTAGE-HIGH CAPACITANCE SILICON EPITAXIAL VARACTRON VOLTAGE-VARIABLE CAPACITANCE DIODES Electrically Equivalent to 1N5421-1N5425 GEOMETRY 417 or 419, GEOMETRY 419 or 423, GEOMETRY 423 or 418	OCR Scan	1N5714 1N5715 4N5716 1N5717 1N5718 1N5421-1N5425 1N5716 1N5718 1N5421 1N5425 tt5200 IN5421 IN5425 IN5717	PDF
1N5421 Abstract: 1N5425 1N5716 1N5718 1N5717 Text: CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 1N5714 1N5715 1N5716 1N5717 1N5718 HIGH-Q-HIGH VOLTAGE-HIGH CAFACITANCE . SILICON EPITAXIAL VARACTRON VOLTAGE-VARIABLE CAPACITANCE DIODES Electrically Equivalent to 1N5421 -1N5425 « a S T Æ » 419-QEOMETRY419 or 423, GEOMETRY 423 or 418	OCR Scan	1N5421 -1N5425 419-QEOMETRY419 1N5714 1N5715 1N5716 1N5717 1N5718 1N5425 1N5718	PDF
MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan		PDF
transistor c2060 Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,	OCR Scan	AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor	PDF