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    1N5551 DIODE Search Results

    1N5551 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    1N5551 DIODE Price and Stock

    Microchip Technology Inc 1N5551

    Rectifier Diode Switching 400V 5A 2000ns 2-Pin Case E Bag
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5551
    • 1 -
    • 10 $6.01
    • 100 $5.3
    • 1000 $4.9
    • 10000 $4.9
    Buy Now

    1N5551 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LM390

    Abstract: No abstract text available
    Text: 1N5551 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N5551 Availability Online Store


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    PDF 1N5551 1N5551 STV3208 LM3909N LM390

    Untitled

    Abstract: No abstract text available
    Text: 1N5551+JANS Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.2


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    PDF 1N5551 Voltage400 Current25u

    Untitled

    Abstract: No abstract text available
    Text: 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 126, REV D JAN JANTX JANTXV HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging


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    PDF 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US 1N5550 1N5551 1N5552 1N5553 1N5554

    Untitled

    Abstract: No abstract text available
    Text: 1N5551+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.2


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    PDF 1N5551 Voltage400 Current25u

    1N5550 JANTX

    Abstract: 1n5551 diode 1N5553US 1N5551 JANTX 1N5551 1N5552 1N5553 1N5554 12 volt-30 amp power diode JANTXV 1N5552
    Text: 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 126, REV E JAN JANTX JANTXV HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging


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    PDF 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US 1N5550 1N5551 1N5552 1N5553 1N5554 1N5550 JANTX 1n5551 diode 1N5553US 1N5551 JANTX 1N5551 1N5552 1N5553 1N5554 12 volt-30 amp power diode JANTXV 1N5552

    1N5551

    Abstract: 1N5552 1N5553 JANTXV 1N5550 1N5553 1N5554
    Text: 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 126, REV F JAN SJ JANTX SX JANTXV SV HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging


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    PDF 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US 1N5550 1N5551 1N5552 1N5553 1N5554 1N5551 1N5552 1N5553 JANTXV 1N5550 1N5553 1N5554

    1N5550

    Abstract: 1N5551 1N5552
    Text: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode \ Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency


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    PDF 1N5550 1N5552 MIL-STD-750, 1N5550 1N5551 D-74025 28-Jan-03 1N5551 1N5552

    1N5552 package

    Abstract: 1N5550 1N5551 1N5552
    Text: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency


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    PDF 1N5550 1N5552 MIL-STD-750, 1N5550 1N5551 D-74025 11-Aug-04 1N5552 package 1N5551 1N5552

    1n5551

    Abstract: 1n5552
    Text: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency


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    PDF 1N5550 1N5552 MIL-STD-750, 1N5551 1N5552 18-Jul-08

    1N5552 package

    Abstract: 1N5550 1N5551 1N5552
    Text: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency


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    PDF 1N5550 1N5552 MIL-STD-750, 1N5550 1N5551 08-Apr-05 1N5552 package 1N5551 1N5552

    33178

    Abstract: JANTX 1N5552 1N5550 1N5550US 1N5551 1N5551US 1N5552 1N5554 1N5554US 1n5551 diode
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 July 2004. MIL-PRF-19500/420H 19 April 2004 SUPERSEDING MIL-PRF-19500/420G 30 December 2002 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,


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    PDF MIL-PRF-19500/420H MIL-PRF-19500/420G 1N5550 1N5554, 1N5550US 1N5554US, MIL-PRF-19500. 33178 JANTX 1N5552 1N5551 1N5551US 1N5552 1N5554 1N5554US 1n5551 diode

    33178

    Abstract: 1N5551 JANTX MIL-PRF-19500 1N5550US JANTX 1N5550 1N5550US 1N5551 1N5551US 1N5552 1N5554
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 June 2003. INCH-POUND MIL-PRF-19500/420G 30 December 2002 SUPERSEDING MIL-PRF-19500/420F 9 October 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER


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    PDF MIL-PRF-19500/420G MIL-PRF-19500/420F 1N5550 1N5554, 1N5550US 1N5554US 33178 1N5551 JANTX MIL-PRF-19500 1N5550US JANTX 1N5551 1N5551US 1N5552 1N5554

    Untitled

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 December 2013. INCH-POUND MIL-PRF-19500/420M 6 September 2013 SUPERSEDING MIL-PRF-19500/420L 27 June 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,


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    PDF MIL-PRF-19500/420M MIL-PRF-19500/420L 1N5550 1N5554, 1N5550US 1N5554US, MIL-PRF-19500.

    JANTX, JX, JAN

    Abstract: Diode 1N5554 1N5554 JANTX JANTX 1N5552
    Text: 1N5550 thru 1N5554 Available on commercial versions VOIDLESS HERMETICALLY SEALED STANDARD RECOVERY GLASS RECTIFIERS Qualified Levels: JAN, JANTX, JANTXV and JANS Qualified to MIL-PRF-19500/420 DESCRIPTION This “standard recovery” rectifier diode series is military qualified and is ideal for high-reliability


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    PDF 1N5550 1N5554 MIL-PRF-19500/420 T4-LDS-0230, JANTX, JX, JAN Diode 1N5554 1N5554 JANTX JANTX 1N5552

    microsemi JX

    Abstract: No abstract text available
    Text: 1N5550 thru 1N5554 Available on commercial versions VOIDLESS HERMETICALLY SEALED STANDARD RECOVERY GLASS RECTIFIERS Qualified Levels: JAN, JANTX, JANTXV and JANS Qualified to MIL-PRF-19500/420 DESCRIPTION This “standard recovery” rectifier diode series is military qualified and is ideal for high-reliability


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    PDF 1N5550 1N5554 MIL-PRF-19500/420 T4-LDS-0230, microsemi JX

    JANTX, JX, JAN

    Abstract: MSC 880 Diode 1N5554 JANTX 1N5550 1N5554 JANTXV equivalent 1N5550 equivalent Microsemi micronote series 050 1N5553 JANTXV JX-47 1N5550
    Text: 1N5550 thru 1N5554 Available on commercial versions VOIDLESS HERMETICALLY SEALED STANDARD RECOVERY GLASS RECTIFIERS Qualified Levels: JAN, JANTX, JANTXV and JANS Qualified to MIL-PRF-19500/420 DESCRIPTION This “standard recovery” rectifier diode series is military qualified and is ideal for high-reliability


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    PDF 1N5550 1N5554 MIL-PRF-19500/420 T4-LDS-0230, JANTX, JX, JAN MSC 880 Diode 1N5554 JANTX 1N5550 1N5554 JANTXV equivalent 1N5550 equivalent Microsemi micronote series 050 1N5553 JANTXV JX-47

    SS5550

    Abstract: ss555 SS5551 SS5554 1N5552 1N5550 1N5551 1N5553 1N5554
    Text: SS5550/US SS5551/US SS5552/US SS5553/US SS5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5108, REV - HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging


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    PDF SS5550/US SS5551/US SS5552/US SS5553/US SS5554/US 1N5550 1N5551 1N5552 1N5553 1N5554 SS5550 ss555 SS5551 SS5554 1N5552 1N5550 1N5551 1N5553 1N5554

    TL 5551

    Abstract: 3sm2 diode 5551 3sm6 1N5550 1N5551 1N5552 1N5553 1N5554 1n5551 diode
    Text: 1N5550 THRU 1N5554 3SM2 THRU 3SM0 Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data ‹ ‹ ‹ ‹ ‹ VR = 200 - 1000V IF = 5.0A trr = 2µS VF = 1.0V Low reverse leakage current Hermetically sealed in fused metal oxide


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    PDF 1N5550 1N5554 MIL-PRF-19500/420. 20SM4 039oz TL 5551 3sm2 diode 5551 3sm6 1N5551 1N5552 1N5553 1N5554 1n5551 diode

    Untitled

    Abstract: No abstract text available
    Text: RECTIFIER, up to 1kV, 5A, 2 jis January 7, 1998 1N5550 1N5551 1N5552 1N5553 1N5554 3SM2 3SM4 3SM6 3SM8 3SM0 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE QUICK REFERENCE DATA


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    PDF 1N5550 1N5551 1N5552 1N5553 1N5554 TEL805-498-2111 1N5550 1N5551 1N5552 1N5553

    3sm6

    Abstract: DS-049 35M6 3SM4 1N5550 1N5552 1N5553 Diode 1N5554 35M8 3SM8
    Text: SEMTECH CORP 5flE » • B M W 1N5550 1N5551 1N5552 1N5553 1N5554 STANDARD RECOVERY AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE 3SM2 3SM4 3SM6 3SM8 3SM0 • Vr = 200 - 1000V » If = 5.0A • trr = 2jaS • Vf = 1.0V unless otherw ise specified


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    PDF 00Q2b53 1N5550 1N5551 1N5552 1N5553 1N5554 3sm6 DS-049 35M6 3SM4 Diode 1N5554 35M8 3SM8

    3SM diode

    Abstract: TL 5551 DIODE 3SM rectifier 50a rectifier 5A 1000V 042T
    Text: iû^innMsc^ January 7, 1998 RECTIFIER, up to 1kV, 5A, 2\iS 1N5550 1N5551 1N5552 1N5553 1N5554 3SM2 3SM4 3SM6 3SM8 3SM0 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE QUICK REFERENCE


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    PDF 1N5550 1N5551 1N5552 1N5553 1N5554 TEL805-498-2111 3SM diode TL 5551 DIODE 3SM rectifier 50a rectifier 5A 1000V 042T

    Untitled

    Abstract: No abstract text available
    Text: 1N5550 thru 1N5554 M ierasemi Corp. The diode èxperts SANTA ANA, CA I nr m o'C m ío n n a lin n m ll- 714 979-8220 RECTIFIERS FEATURES • • • • V oid less herm etically sealed glass package. Triple layer passivation. M etallurgically bonded. JA N /TX /TX V available per M IL-S-19500/420.


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    PDF 1N5550 1N5554 IL-S-19500/420. V01IA8E

    VF09A

    Abstract: 1N5550 1N5551 1N5552 1N5553 1N5554
    Text: Microsemi Corp. ' Jfic diode pxpen^ 5 m ^ Pii»^ àL SANTA ANA, C'A For more information call: 7I4 979-8220 RECTIFIERS FEATURES • • • • 1N5550 thru 1N5554 Voidless hermetically sealed glass package. Triple layer passivation. Melallurgically bonded.


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    PDF 1N5554 MIL-S-19500/420. 50/jA VF09A 1N5550 1N5551 1N5552 1N5552 1N5553 1N5554

    1N6552

    Abstract: No abstract text available
    Text: 1N5550 thru 1N5554 MicrosemiCorp. 9 The diode experts j SANTA ANA, CA For more inform ation call: 714 979-8220 SCOTTSDALE, A Z / / FEATURES • • • • RECTIFIERS Voidless hermetically sealed glass package. Triple layer passivation. M etallurgical^ bonded.


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    PDF 1N5550 1N5554 1N6552