1N5550
Abstract: 1N5551 1N5552
Text: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode \ Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency
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Original
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1N5550
1N5552
MIL-STD-750,
1N5550
1N5551
D-74025
28-Jan-03
1N5551
1N5552
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PDF
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1n5551
Abstract: 1n5552
Text: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency
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Original
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1N5550
1N5552
MIL-STD-750,
1N5551
1N5552
18-Jul-08
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PDF
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1N5552 package
Abstract: 1N5550 1N5551 1N5552
Text: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 3.0 Amperes E D * FEATURES ♦ Glass passivated cavity-free junction ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed package
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Original
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1N5550
1N5552
MIL-S-19500
50mVp-p
1N5552 package
1N5551
1N5552
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PDF
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1N5552 package
Abstract: 1N5550 1N5551 1N5552
Text: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency
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Original
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1N5550
1N5552
MIL-STD-750,
1N5550
1N5551
D-74025
11-Aug-04
1N5552 package
1N5551
1N5552
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PDF
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1N5552 package
Abstract: 1N5550 1N5551 1N5552
Text: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency
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Original
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1N5550
1N5552
MIL-STD-750,
1N5550
1N5551
08-Apr-05
1N5552 package
1N5551
1N5552
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 3 . 0 Amperes FEATURES ♦Glass passivated cavity-free junction ♦ High temperature metallurgical^ bonded construction ♦ Hermetically sealed package
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OCR Scan
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1N5550
1N5552
MIL-S-19500
MIL-STD-750,
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PDF
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w1853
Abstract: No abstract text available
Text: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 3 . 0 Amperes FEATURES ♦ ♦ ♦ ♦ Glass passivated cavity-free junction High temperature m etallurgical^ bonded construction Hermetically sealed package
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OCR Scan
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1N5550
1N5552
MIL-S-19500
MIL-STD-750,
w1853
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 3.0 Amperes FEATURES ♦ ♦ ♦ ♦ Glass passivated cavity-free junction High temperature metallurgical^ bonded construction Hermetically sealed package
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OCR Scan
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1N5550
1N5552
MIL-S-19500
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PDF
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1N5550
Abstract: 1N5551 1N5552
Text: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 3.0 Amperes E D * FEATURES ♦ Glass passivated cavity-free junction ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed package
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Original
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1N5550
1N5552
MIL-S-19500
50mVp-p
1N5551
1N5552
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PDF
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1N5552 package
Abstract: 1N5552
Text: Web Datasheet- Power Rectifier Web Datasheet POWER RECTIFIER PART NUMBER: 1N5552 PACKAGE STYLE:301 CONFIGURATION:SINGLE ALL RATINGS ARE @ Tc = 25 °C UNLESS OTHERWISE SPECIFIED. Disclaimer MAXIMUM RATINGS / Conditions SYMBOL MAX PIV 600 Volts MAXIMUM DC OUTPUT CURRENT @ Tc=55 °C
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Original
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1N5552
1N5552 package
1N5552
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PDF
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88518
Abstract: 1N5550 1N5552 package 1N5551 1N5552
Text: 1N5550 thru 1N5552 Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers Case Style G4 0.180 4.6 0.115 (2.9) DIA. 1.0 (25.4) MIN. * d e t nFeatures e t a P Reverse Voltage 200 to 1000V Forward Current 3.0A • • •
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Original
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1N5550
1N5552
MIL-S-19500
MIL-STD-750,
50mVp-p
04-Dec-02
88518
1N5552 package
1N5551
1N5552
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER V oltage - 2 0 0 to 600 Volts C u rre n t - 3 .0 Amperes FEATURES ♦ ♦ ♦ ♦ Glass passivated cavity-free junction High temperature metallurgically bonded Hermetically sealed package Capable of meeting
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OCR Scan
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1N5550
1N5552
IL-STD-750
1N5554
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PDF
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1N5552 package
Abstract: 1N5550 1N5551 1N5552
Text: 1N5550 THRU 1N5552 Glass Passivated Junction Rectifier Case Style G4 1.0 25.4 MIN. 0.180 (4.6) 0.115 (2.9) DIA. * d e t n e t Pa Features • • • • Cavity-free glass passivated junction High temperature metallurgically bonded construction Hermetically sealed package
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Original
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1N5550
1N5552
MIL-S-19500
MIL-STD-750,
50mVp-p
1N5552 package
1N5551
1N5552
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PDF
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Untitled
Abstract: No abstract text available
Text: B K C INTERNATIONAL 3DE D • 1 1 7 *n fl3 DGÜ03GS 7 ■ " " p O V O °j 1N5550 Series • General Purpose Rectifiers in “B” Body Package Type 1N5550 1N5551 1N5552 1N5553 1N5554 Peak Inverse Voltage MIN. PIV Minimum Reverse Breakdown Voltage @ 50 pA
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OCR Scan
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1N5550
1N5550
1N5551
1N5552
1N5553
1N5554
DO-34
DO-35
DO-41
LL-41
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PDF
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1n5552 jan
Abstract: No abstract text available
Text: 1N5552+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.2
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Original
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1N5552
Voltage600
Current25u
1n5552 jan
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5550 1N5553 1N5551 1N5554 1N5552 GLASS PASSIVATED SILICON RECTIFIERS 3.0 AMP, 200 THRU 1000 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5550 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package designed for general
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Original
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1N5550
1N5553
1N5551
1N5554
1N5552
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5550 thru 1N5552 Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers Case Style G4 0.180 4.6 0.115 (2.9) DIA. 1.0 (25.4) MIN. * d e t nFeatures e t a P Reverse Voltage 200 to 1000V Forward Current 3.0A • • •
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Original
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1N5550
1N5552
MIL-S-19500
50mVp-p
11-Feb-02
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5552+JANTXV Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.2
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Original
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1N5552
Voltage600
Current25u
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PDF
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1N5550-1N5553
Abstract: 1n5550 1n5552 1n5553
Text: 1N5550 1N5553 1N5551 1N5554 1N5552 GLASS PASSIVATED SILICON RECTIFIER 3 AMP, 200 THRU 1000 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5550 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package designed for general
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Original
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1N5550
1N5553
1N5551
1N5554
1N5552
1N5550-1N5553
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PDF
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1N5625 PIV
Abstract: 1N5060 BYW55 1N4248 1n5062 1N5061 1N5059 1N5625 byw55 byw56 1N4245
Text: Sinterglass Rectifiers Part No. 1N4245 1N4246 1N4247 1N4248 1N4249 1N5059 1N5060 1N5061 1N5062 1N5614 1N5616 1N5618 1N5620 1N5622 G1A G1B G1D G1G G1J G1K G1M BYT41A BYT41B BYT41D BYT41G BYT41J BYT41K BYT41M BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M
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Original
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-65oC
1N4245
1N4246
1N4247
1N4248
1N4249
1N5059
1N5060
1N5061
1N5062
1N5625 PIV
1N5060
BYW55
1N4248
1n5062
1N5061
1N5059
1N5625
byw55 byw56
1N4245
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PDF
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1N5552
Abstract: 1R50 1N5552 package 1N5550 1N5551 1N5553 1N5554
Text: . 19Ô9963 C E N T R A L S E M I C O N D U C T O R D T '- M - 'ï* ' 92D 00316 DESCRIPTION The CENTRAL SEMICONDUCTOR 1N5550 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package for general applications where high reliability is desired.
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OCR Scan
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000031t.
1n5550
1n5551
1n5552
1n5553
1N5553
1R50
1N5552 package
1N5554
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5550 thru 1N5554 M ierasemi Corp. The diode èxperts SANTA ANA, CA I nr m o'C m ío n n a lin n m ll- 714 979-8220 RECTIFIERS FEATURES • • • • V oid less herm etically sealed glass package. Triple layer passivation. M etallurgically bonded. JA N /TX /TX V available per M IL-S-19500/420.
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OCR Scan
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1N5550
1N5554
IL-S-19500/420.
V01IA8E
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PDF
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VF09A
Abstract: 1N5550 1N5551 1N5552 1N5553 1N5554
Text: Microsemi Corp. ' Jfic diode pxpen^ 5 m ^ Pii»^ àL SANTA ANA, C'A For more information call: 7I4 979-8220 RECTIFIERS FEATURES • • • • 1N5550 thru 1N5554 Voidless hermetically sealed glass package. Triple layer passivation. Melallurgically bonded.
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OCR Scan
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1N5554
MIL-S-19500/420.
50/jA
VF09A
1N5550
1N5551
1N5552
1N5552
1N5553
1N5554
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5550 thru 1N5554 Microsemi Corp. ^ Jfic chotis e x p e rt. SANTA ANA, CA For more information call: 7I4 979-8220 RECTIFIERS FEATURES • • • . Voidless hermetically sealed glass package. Triple layer passivation. Melallurgically bonded. JA N /TX/TX V available per M IL -S -19 5 0 0 /4 2 0 .
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OCR Scan
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1N5550
1N5554
50/jA
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PDF
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