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    1N5552 PACKAGE Search Results

    1N5552 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    1N5552 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N5550

    Abstract: 1N5551 1N5552
    Text: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode \ Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency


    Original     		PDF 1N5550 1N5552 MIL-STD-750, 1N5550 1N5551 D-74025 28-Jan-03 1N5551 1N5552

    1n5551

    Abstract: 1n5552
    Text: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency


    Original     		PDF 1N5550 1N5552 MIL-STD-750, 1N5551 1N5552 18-Jul-08

    1N5552 package

    Abstract: 1N5550 1N5551 1N5552
    Text: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 3.0 Amperes E D * FEATURES ♦ Glass passivated cavity-free junction ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed package


    Original     		PDF 1N5550 1N5552 MIL-S-19500 50mVp-p 1N5552 package 1N5551 1N5552

    1N5552 package

    Abstract: 1N5550 1N5551 1N5552
    Text: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency


    Original     		PDF 1N5550 1N5552 MIL-STD-750, 1N5550 1N5551 D-74025 11-Aug-04 1N5552 package 1N5551 1N5552

    1N5552 package

    Abstract: 1N5550 1N5551 1N5552
    Text: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency


    Original     		PDF 1N5550 1N5552 MIL-STD-750, 1N5550 1N5551 08-Apr-05 1N5552 package 1N5551 1N5552

    1N5550

    Abstract: 1N5551 1N5552
    Text: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 3.0 Amperes E D * FEATURES ♦ Glass passivated cavity-free junction ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed package


    Original     		PDF 1N5550 1N5552 MIL-S-19500 50mVp-p 1N5551 1N5552

    1N5552 package

    Abstract: 1N5552
    Text: Web Datasheet- Power Rectifier Web Datasheet POWER RECTIFIER PART NUMBER: 1N5552 PACKAGE STYLE:301 CONFIGURATION:SINGLE ALL RATINGS ARE @ Tc = 25 °C UNLESS OTHERWISE SPECIFIED. Disclaimer MAXIMUM RATINGS / Conditions SYMBOL MAX PIV 600 Volts MAXIMUM DC OUTPUT CURRENT @ Tc=55 °C


    Original     		PDF 1N5552 1N5552 package 1N5552

    88518

    Abstract: 1N5550 1N5552 package 1N5551 1N5552
    Text: 1N5550 thru 1N5552 Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers Case Style G4 0.180 4.6 0.115 (2.9) DIA. 1.0 (25.4) MIN. * d e t nFeatures e t a P Reverse Voltage 200 to 1000V Forward Current 3.0A • • •


    Original     		PDF 1N5550 1N5552 MIL-S-19500 MIL-STD-750, 50mVp-p 04-Dec-02 88518 1N5552 package 1N5551 1N5552

    1N5552 package

    Abstract: 1N5550 1N5551 1N5552
    Text: 1N5550 THRU 1N5552 Glass Passivated Junction Rectifier Case Style G4 1.0 25.4 MIN. 0.180 (4.6) 0.115 (2.9) DIA. * d e t n e t Pa Features • • • • Cavity-free glass passivated junction High temperature metallurgically bonded construction Hermetically sealed package


    Original     		PDF 1N5550 1N5552 MIL-S-19500 MIL-STD-750, 50mVp-p 1N5552 package 1N5551 1N5552

    1n5552 jan

    Abstract: No abstract text available
    Text: 1N5552+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.2


    Original     		PDF 1N5552 Voltage600 Current25u 1n5552 jan

    Untitled

    Abstract: No abstract text available
    Text: 1N5550 1N5553 1N5551 1N5554 1N5552 GLASS PASSIVATED SILICON RECTIFIERS 3.0 AMP, 200 THRU 1000 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5550 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package designed for general


    Original     		PDF 1N5550 1N5553 1N5551 1N5554 1N5552

    Untitled

    Abstract: No abstract text available
    Text: 1N5550 thru 1N5552 Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers Case Style G4 0.180 4.6 0.115 (2.9) DIA. 1.0 (25.4) MIN. * d e t nFeatures e t a P Reverse Voltage 200 to 1000V Forward Current 3.0A • • •


    Original     		PDF 1N5550 1N5552 MIL-S-19500 50mVp-p 11-Feb-02

    Untitled

    Abstract: No abstract text available
    Text: 1N5552+JANTXV Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.2


    Original     		PDF 1N5552 Voltage600 Current25u

    1N5550-1N5553

    Abstract: 1n5550 1n5552 1n5553
    Text: 1N5550 1N5553 1N5551 1N5554 1N5552 GLASS PASSIVATED SILICON RECTIFIER 3 AMP, 200 THRU 1000 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5550 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package designed for general


    Original     		PDF 1N5550 1N5553 1N5551 1N5554 1N5552 1N5550-1N5553

    Untitled

    Abstract: No abstract text available
    Text: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 3 . 0 Amperes FEATURES ♦Glass passivated cavity-free junction ♦ High temperature metallurgical^ bonded construction ♦ Hermetically sealed package


    OCR Scan     		PDF 1N5550 1N5552 MIL-S-19500 MIL-STD-750,

    w1853

    Abstract: No abstract text available
    Text: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 3 . 0 Amperes FEATURES ♦ ♦ ♦ ♦ Glass passivated cavity-free junction High temperature m etallurgical^ bonded construction Hermetically sealed package


    OCR Scan     		PDF 1N5550 1N5552 MIL-S-19500 MIL-STD-750, w1853

    Untitled

    Abstract: No abstract text available
    Text: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 3.0 Amperes FEATURES ♦ ♦ ♦ ♦ Glass passivated cavity-free junction High temperature metallurgical^ bonded construction Hermetically sealed package


    OCR Scan     		PDF 1N5550 1N5552 MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: 1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER V oltage - 2 0 0 to 600 Volts C u rre n t - 3 .0 Amperes FEATURES ♦ ♦ ♦ ♦ Glass passivated cavity-free junction High temperature metallurgically bonded Hermetically sealed package Capable of meeting


    OCR Scan     		PDF 1N5550 1N5552 IL-STD-750 1N5554

    Untitled

    Abstract: No abstract text available
    Text: B K C INTERNATIONAL 3DE D • 1 1 7 *n fl3 DGÜ03GS 7 ■ " " p O V O °j 1N5550 Series • General Purpose Rectifiers in “B” Body Package Type 1N5550 1N5551 1N5552 1N5553 1N5554 Peak Inverse Voltage MIN. PIV Minimum Reverse Breakdown Voltage @ 50 pA


    OCR Scan     		PDF 1N5550 1N5550 1N5551 1N5552 1N5553 1N5554 DO-34 DO-35 DO-41 LL-41

    1N5415

    Abstract: 1N5416 1N5417 1N5418 1N5419 1N5550 1N5551 1N5552 1N5553 1N5554
    Text: B K C INTERNATIONAL 3DE D • 117*nfl3 DGÜ03GS 7 ■ " " p O V O °j 1N5550 Series • General Purpose Rectifiers in “B” Body Package Type 1N5550 1N5551 1N5552 1N5553 1N5554 Peak Inverse Voltage MIN. PIV Minimum Reverse Breakdown Voltage @ 50 pA Average


    OCR Scan     		PDF 1N5550 1N5551 1N5552 1N5553 1N5554 1N5415 1N5420 1N5186 1N5416 1N5417 1N5418 1N5419

    1N5552

    Abstract: 1R50 1N5552 package 1N5550 1N5551 1N5553 1N5554
    Text: . 19Ô9963 C E N T R A L S E M I C O N D U C T O R D T '- M - 'ï* ' 92D 00316 DESCRIPTION The CENTRAL SEMICONDUCTOR 1N5550 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package for general applications where high reliability is desired.


    OCR Scan     		PDF 000031t. 1n5550 1n5551 1n5552 1n5553 1N5553 1R50 1N5552 package 1N5554

    Untitled

    Abstract: No abstract text available
    Text: 1N5550 thru 1N5554 M ierasemi Corp. The diode èxperts SANTA ANA, CA I nr m o'C m ío n n a lin n m ll- 714 979-8220 RECTIFIERS FEATURES • • • • V oid less herm etically sealed glass package. Triple layer passivation. M etallurgically bonded. JA N /TX /TX V available per M IL-S-19500/420.


    OCR Scan     		PDF 1N5550 1N5554 IL-S-19500/420. V01IA8E

    VF09A

    Abstract: 1N5550 1N5551 1N5552 1N5553 1N5554
    Text: Microsemi Corp. ' Jfic diode pxpen^ 5 m ^ Pii»^ àL SANTA ANA, C'A For more information call: 7I4 979-8220 RECTIFIERS FEATURES • • • • 1N5550 thru 1N5554 Voidless hermetically sealed glass package. Triple layer passivation. Melallurgically bonded.


    OCR Scan     		PDF 1N5554 MIL-S-19500/420. 50/jA VF09A 1N5550 1N5551 1N5552 1N5552 1N5553 1N5554

    Untitled

    Abstract: No abstract text available
    Text: 1N5550 thru 1N5554 Microsemi Corp. ^ Jfic chotis e x p e rt. SANTA ANA, CA For more information call: 7I4 979-8220 RECTIFIERS FEATURES • • • . Voidless hermetically sealed glass package. Triple layer passivation. Melallurgically bonded. JA N /TX/TX V available per M IL -S -19 5 0 0 /4 2 0 .


    OCR Scan     		PDF 1N5550 1N5554 50/jA