datasheets diode 1n5819
Abstract: 1N5818 1N5818-1N5819 1N581x 1N5819 DO-204AL
Text: Bulletin PD-20590 04/01 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF AV Rectangular 1.0 A 30/40 V Low profile, axial leaded outline waveform VRRM The 1N5818/ 1N5819 axial leaded Schottky rectifier has been
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PD-20590
1N5818
1N5819
1N5818/
1N5819
1N581X
1N581X
datasheets diode 1n5819
1N5818
1N5818-1N5819
DO-204AL
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PDF
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1n5819
Abstract: No abstract text available
Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
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VS-1N5819,
VS-1N5819-M3
DO-204AL
2002/95/EC
DO-41)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
1n5819
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VS-1N5819TR-M3
Abstract: VS-1N5819-M3 1n5819 vishay make
Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
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VS-1N5819,
VS-1N5819-M3
DO-204AL
DO-41)
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
VS-1N5819TR-M3
VS-1N5819-M3
1n5819 vishay make
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Untitled
Abstract: No abstract text available
Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
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VS-1N5819,
VS-1N5819-M3
DO-204AL
2002/95/EC
DO-41)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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1N5818
Abstract: datasheets diode 1n5818 1N5819 1N581X DO-204AL
Text: Bulletin PD-20590 rev. A 05/02 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF AV Rectangular 1.0 A 30/40 V Low profile, axial leaded outline IFSM @ tp = 5 µs sine 225
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PD-20590
1N5818
1N5819
1N5818/
1N5819
1N5818,
1N5818
datasheets diode 1n5818
1N581X
DO-204AL
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PDF
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VS-1N5819TR-M3
Abstract: VS-1N5819-M3
Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
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VS-1N5819,
VS-1N5819-M3
DO-204AL
DO-41)
2002/95/EC
11-Mar-11
VS-1N5819TR-M3
VS-1N5819-M3
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datasheets diode 1n5818
Abstract: 1N5818 1N5819 1N581X DO-204AL B1104
Text: Bulletin PD-20590 rev. B 11/04 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/Features The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies,
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PD-20590
1N5818
1N5819
1N5818/
1N5819
12-Mar-07
datasheets diode 1n5818
1N5818
1N581X
DO-204AL
B1104
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20590 rev. B 11/04 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/Features The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies,
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PD-20590
1N5818
1N5819
1N5818/
1N5819
08-Mar-07
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PDF
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1N5818
Abstract: 1N5819 1N581X DO-204AL b1104
Text: Bulletin PD-20590 rev. B 11/04 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/Features The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies,
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PD-20590
1N5818
1N5819
1N5818/
1N5819
1N5818,
1N5818
1N581X
DO-204AL
b1104
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5818/1N5819 Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline RoHS • High frequency operation COMPLIANT • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for
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1N5818/1N5819
DO-204AL
1N5818/1N5819
18-Jul-08
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1N5819
Abstract: DO-204AL RS-296-D
Text: 1N5819 Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
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1N5819
DO-204AL
1N5819
DO-204AL
RS-296-D
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BA157* diode
Abstract: Zener Diode Glass 50v
Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package DO-41 Package Weight mg 350 Product Group Type No. 1N5817 – 1N5819 SB120 – SB1200 SR120 – SR1100 SB220S – SB2200S SF11 – SF17 HER101 – HER108 UF4001 – UF4007
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DO-41
1N5817
1N5819
SB120
SB1200
SR120
SR1100
SB220S
SB2200S
HER101
BA157* diode
Zener Diode Glass 50v
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Untitled
Abstract: No abstract text available
Text: 1N5819 Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
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1N5819
DO-204AL
1N5819
11-Mar-11
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1N5819
Abstract: DO-204AL 1N5819 2A
Text: 1N5819 Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
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1N5819
DO-204AL
1N5819
18-Jul-08
DO-204AL
1N5819 2A
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1N5817-1N5819
Abstract: MBR4020PT-4060PT SR10-SR50 3060PT ERA81 004 ERC81 002 SB120 SB160 ERA81-002 ERB81-002 pbyr3035pt
Text: 5.肖特基整流二极管 序号 型号 IF VRRM VF A V V 外形 （1）肖特基塑封整流二极管 1 1N5817-1N5819 1A 20-40V 0.45-0.6 2 1N5820-1N5822 3A 20-40V 0.45-0.6 DO-201AD 3
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1N5817-1N5819
0-40V
1N5820-1N5822
DO-201AD
SRT12-SRT100
0-100V
SR10-SR50
1-5A20-100V
SB120-SB1B0
1N5817-1N5819
MBR4020PT-4060PT
SR10-SR50
3060PT
ERA81 004
ERC81 002
SB120 SB160
ERA81-002
ERB81-002
pbyr3035pt
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d468 npn
Abstract: AIC1563CS transistor D468 circuit diagram application d468 AIC1563CN transistor d468 aic1563 application note AIC1563 1N1418 1N4148
Text: AIC1563 Versatile DC/DC Converter FEATURES DESCRIPTION The AIC1563 is a monolithic control circuit 3V to 30V Input Voltage Operation. Internal 2A Peak Current Switch. 1.5A Continuous Output Current. Bootstrapped Driver. High Side Current Sense Capability.
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AIC1563
AIC1563
100Hz
100KHz.
100mA
100mV
d468 npn
AIC1563CS
transistor D468 circuit diagram application
d468
AIC1563CN
transistor d468
aic1563 application note
1N1418
1N4148
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AIC1563PS
Abstract: 78l05 sop8 AIC1563 78l05 sop aic1563 application note 1n5819 equivalent 78L05 AE 1N4148 1N5819 IN4148
Text: AIC1563 Versatile DC/DC Converter FEATURES DESCRIPTION The AIC1563 is a monolithic control circuit con- 3V to 30V Input Voltage Operation. Internal 2A Peak Current Switch. 1.5A Continuous Output Current. Bootstrapped Driver. High Side Current Sense Capability.
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AIC1563
AIC1563
100Hz
100KHz.
AIC1563PS
78l05 sop8
78l05 sop
aic1563 application note
1n5819 equivalent
78L05 AE
1N4148
1N5819
IN4148
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AIC1563PS
Abstract: No abstract text available
Text: AIC1563 Versatile DC/DC Converter FEATURES DESCRIPTION The AIC1563 is a monolithic control circuit con- 3V to 30V Input Voltage Operation. Internal 2A Peak Current Switch. 1.5A Continuous Output Current. Bootstrapped Driver. High Side Current Sense Capability.
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AIC1563
AIC1563
100Hz
100KHz.
AIC1563PS
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AIC1563
Abstract: aic1563 application note IN5819 IN4148 1N4148 1N5819 IN5819 equivalent
Text: AIC1563 Versatile DC/DC Converter n FEATURES n DESCRIPTION l 3V to 30V Input Voltage Operation. The AIC1563 is a monolithic control circuit con- l Internal 2A Peak Current Switch. taining the primary functions required for DC to l 1.5A Continuous Output Current.
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AIC1563
AIC1563
100mA
100mV
aic1563 application note
IN5819
IN4148
1N4148
1N5819
IN5819 equivalent
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d468 npn
Abstract: transistor D468 circuit diagram application D468 1N1418 1N5819 ANALOG 78L05 cy AIC1563CN CY 78L05 DS-1563-00 3V to 30V dc dc converter
Text: AIC1563 HIGH-EFFICIENCY DC/DC CONVERTER SPEC NO: DS-1563-00 JAN 30, 01 n FEATURES n DESCRIPTION l 3V to 30V Input Voltage Operation. The AIC1563 is a monolithic control circuit contain- l Internal 2A Peak Current Switch. ing the primary functions required for DC to DC con-
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AIC1563
DS-1563-00
AIC1563
d468 npn
transistor D468 circuit diagram application
D468
1N1418
1N5819 ANALOG
78L05 cy
AIC1563CN
CY 78L05
3V to 30V dc dc converter
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silicon rectifier diodes 12v/1a output
Abstract: IT 78L05 1N4148 1N5819 IN4148 IN5819 78l05 so8 U-134 STEP-DOWN CONVERTER SO8 thermistor RY 126
Text: SS6563 Versatile DC/DC Converter FEATURES DESCRIPTION The SS6563 is a monolithic control circuit that Operates from 3V to 30V input voltage Internal 2A peak current switch. Continuous output current of 1.5A Bootstrapped driver. High-side current sense capability.
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SS6563
SS6563
100Hz
100KHz.
silicon rectifier diodes 12v/1a output
IT 78L05
1N4148
1N5819
IN4148
IN5819
78l05 so8
U-134
STEP-DOWN CONVERTER SO8
thermistor RY 126
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AIC1563PS
Abstract: AIC1563
Text: AIC1563 Versatile DC/DC Converter FEATURES DESCRIPTION The AIC1563 is a monolithic control circuit con- 3V to 30V Input Voltage Operation. Internal 2A Peak Current Switch. 1.5A Continuous Output Current. Bootstrapped Driver. High Side Current Sense Capability.
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AIC1563
AIC1563
100Hz
100KHz.
AIC1563PS
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PBYR1540CT
Abstract: IN5822ID PBYR1535CT PBYR1045F 150a
Text: Power Devices Schottky Rectifiers in order of current rating Package Outline Average Forward Current Repetitive Peak Reverse Voltage Surge (NonRepetitive) Forward Current Voltage Drop •f (AV) max.,1) ^RRIVl max. *FSM max.*2* V F max. @ 1N5817 1N5818 1N5819
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1N5817
1N5818
1N5819
PRLL5817
PRLL5818
PRLL5819
PBYR235CT
PBYR240CT
PBYR245CT
PBYR280CT
PBYR1540CT
IN5822ID
PBYR1535CT
PBYR1045F
150a
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1N5817
Abstract: 1N5818 1N5819 marking symbol B03 2fl marking
Text: E 1N5817 - 1N5819 TAIWAN SEM ICONDUCTO R 1.0 AMP. Schotlky Barrier Rectifiers tò RoHS D_Cb41 COM PLIANCE -Ìd - .WT|2.7i Features Low power loss, high efficiency. High current capability. Low VF. High reliability High surge currenl capability. Epitaxial construction.
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1N5817
1N5819
DO-41
DO-41
MIL-STD-202,
1N5819)
1N5818
1N5819
marking symbol B03
2fl marking
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