1N5817
Abstract: 1N5818 1N5819 DO41
Text: 1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV 1A VRRM 40 V Tj 150°C VF (max) 0.45 V FEATURES AND BENEFITS n n n n n VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP
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1N581x
1N5817
1N5818
1N5819
DO41
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PDF
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1N5817
Abstract: 1N5818 1N5819 DO41 LOW DROP POWER SCHOTTKY RECTIFIER
Text: 1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV 1A VRRM 40 V Tj 150°C VF (max) 0.45 V FEATURES AND BENEFITS n n n n n VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP
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Original
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1N581x
1N581xRL
1N5817
1N5818
1N5819
DO41
LOW DROP POWER SCHOTTKY RECTIFIER
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PDF
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datasheets diode 1n5818
Abstract: 1N5817 1N5818 1N5819 DO41
Text: 1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF AV 1A VRRM 40 V Tj 150°C VF (max) 0.45 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP DO41 DESCRIPTION
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Original
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1N581x
1N5817
1N5818
1N5819
datasheets diode 1n5818
1N5819
DO41
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PDF
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1N581XLB
Abstract: 1N5817 1N5818 1N5819 1N581X
Text: CYStech Electronics Corp. Spec. No. : C331LB Issued Date : 2004.07.05 Revised Date : Page No. : 1/3 1.0Amp Silicon Schottky Barrier Rectifiers 1N581XLB Series Features • Low forward voltage drop • High current capability • High surge current capability
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Original
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C331LB
1N581XLB
DO-41
MIL-STD-202,
UL94V-0
1N581XLB
1N5817
1N5818
1N5819
1N581X
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PDF
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1N5817
Abstract: 1N5818 1N5819 DO41
Text: 1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV 1A VRRM 40 V Tj 150°C VF (max) 0.45 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP DO41 DESCRIPTION
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Original
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1N581x
1N5817
1N5818
1N5819
1N5819
DO41
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5817 - 1N5819 CREAT BY ART Pb 1.0AMP. Schottky Barrier Rectifiers DO-41 RoHS COMPLIANCE Features Low power loss, high efficiency High current capability, Low VF High reliability High surge current capability Exitaxial construction Guard-ring for transient protection
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Original
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1N5817
1N5819
DO-41
DO-41
MIL-STD-202,
1N5818
300us
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20590 rev. B 11/04 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/Features The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies,
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Original
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PD-20590
1N5818
1N5819
1N5818/
1N5819
08-Mar-07
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PDF
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1N5818
Abstract: datasheets diode 1n5818 1N5819 1N581X DO-204AL
Text: Bulletin PD-20590 rev. A 05/02 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF AV Rectangular 1.0 A 30/40 V Low profile, axial leaded outline IFSM @ tp = 5 µs sine 225
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Original
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PD-20590
1N5818
1N5819
1N5818/
1N5819
1N5818,
1N5818
datasheets diode 1n5818
1N581X
DO-204AL
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PDF
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datasheets diode 1n5819
Abstract: 1N5818 1N5818-1N5819 1N581x 1N5819 DO-204AL
Text: Bulletin PD-20590 04/01 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF AV Rectangular 1.0 A 30/40 V Low profile, axial leaded outline waveform VRRM The 1N5818/ 1N5819 axial leaded Schottky rectifier has been
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Original
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PD-20590
1N5818
1N5819
1N5818/
1N5819
1N581X
1N581X
datasheets diode 1n5819
1N5818
1N5818-1N5819
DO-204AL
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PDF
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datasheets diode 1n5818
Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5817,
1N5818,
1N5819
1N5817
1N5819
r14525
1N5817/D
datasheets diode 1n5818
1N5817RL
1N5818
1N5818RL
1N5819RL
1N5817-19
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5817 - 1N5819 CREAT BY ART 1.0AMP. Schottky Barrier Rectifiers DO-41 Features Low power loss, high efficiency High current capability, Low VF High reliability High surge current capability Exitaxial construction Guard-ring for transient protection
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Original
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1N5817
1N5819
DO-41
DO-41
MIL-STD-202,
1N581x
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5817 thru 1N5819 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
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Original
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1N5817
1N5819
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
JESD22-B102
50mVp-p
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PDF
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1n5819 equivalent
Abstract: No abstract text available
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817
1N5818
1n5819 equivalent
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PDF
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1N5817
Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817/D
1N5817RL
1N5818
1N5818RL
1N5819RL
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PDF
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1n5819 equivalent
Abstract: 1N5817-19 1N5817 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
BRD8011/D.
DO-41
1n5819 equivalent
1N5817-19
1N5817G
1N5817RL
1N5817RLG
1N5818
1N5818G
1N5818RL
1N5818RLG
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5817 thru 1N5819 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
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Original
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1N5817
1N5819
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
JESD22-B102
D1307014
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PDF
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1N5819 package
Abstract: datasheets diode 1n5818 datasheets diode 1n5819 1N5817 1N5818 1N5819
Text: 1N5817 THRU 1N5819 1.0 AMP. Schottky Barrier Rectifier FEATURES • Low forward voltage drop • High current capability • High reliability • High surge current capability DO-41 2. 2. 1. MECHANICAL DATA • Case:DO-41 Molded plastic • Epoxy:UL94V-0 rate flame retardant
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Original
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1N5817
1N5819
DO-41
UL94V-0
DO-41
MIL-STD-202,
33grams
1N581xCE
1N5817/1N5818/1N5819
1N5819 package
datasheets diode 1n5818
datasheets diode 1n5819
1N5818
1N5819
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PDF
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1n5819 equivalent
Abstract: 1n5819
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817
1N5818
1n5819 equivalent
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5817 thru 1N5819 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
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Original
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1N5817
1N5819
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
JESD22-B102
D1307014
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5817 - 1N5819 1.0AMP. Schottky Barrier Rectifiers DO-41 Features Low power loss, high efficiency High current capability, Low VF High reliability High surge current capability Exitaxial construction Guard-ring for transient protection
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Original
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1N5817
1N5819
DO-41
MIL-STD-202,
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5817 thru 1N5819 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
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Original
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1N5817
1N5819
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
JESD22-B102
50mVp-p
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Avalanche capability specified A K DO-41 Description Axial Power Schottky rectifier suited for Switch
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Original
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1N5817,
1N5818,
1N5819
DO-41
DO-41
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS 1A I f a v V rrm Tj Vf (max) 40 V 150°C 0.45 V FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ EXTREMELY FAST SWITCHING ■ LOW FORWARD VOLTAGE DROP
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OCR Scan
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1N581x
1N5817
1N5818
1N5819
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PDF
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N5818
Abstract: No abstract text available
Text: 1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS If av 1A V rrm 40 V Tj 150°C V f (max) 0.45 V FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ EXTREMELY FAST SWITCHING ■ LOW FORWARD VOLTAGE DROP
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OCR Scan
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1N581x
N5818
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PDF
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