1n5819
Abstract: No abstract text available
Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
|
Original
|
PDF
|
VS-1N5819,
VS-1N5819-M3
DO-204AL
2002/95/EC
DO-41)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
1n5819
|
VS-1N5819TR-M3
Abstract: VS-1N5819-M3 1n5819 vishay make
Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
|
Original
|
PDF
|
VS-1N5819,
VS-1N5819-M3
DO-204AL
DO-41)
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
VS-1N5819TR-M3
VS-1N5819-M3
1n5819 vishay make
|
Untitled
Abstract: No abstract text available
Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
|
Original
|
PDF
|
VS-1N5819,
VS-1N5819-M3
DO-204AL
2002/95/EC
DO-41)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
|
VS-1N5819TR-M3
Abstract: VS-1N5819-M3
Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
|
Original
|
PDF
|
VS-1N5819,
VS-1N5819-M3
DO-204AL
DO-41)
2002/95/EC
11-Mar-11
VS-1N5819TR-M3
VS-1N5819-M3
|
datasheets diode 1n5818
Abstract: 1N5818 1N5819 1N581X DO-204AL B1104
Text: Bulletin PD-20590 rev. B 11/04 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/Features The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies,
|
Original
|
PDF
|
PD-20590
1N5818
1N5819
1N5818/
1N5819
12-Mar-07
datasheets diode 1n5818
1N5818
1N581X
DO-204AL
B1104
|
Untitled
Abstract: No abstract text available
Text: Bulletin PD-20590 rev. B 11/04 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/Features The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies,
|
Original
|
PDF
|
PD-20590
1N5818
1N5819
1N5818/
1N5819
08-Mar-07
|
Untitled
Abstract: No abstract text available
Text: 1N5818/1N5819 Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline RoHS • High frequency operation COMPLIANT • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for
|
Original
|
PDF
|
1N5818/1N5819
DO-204AL
1N5818/1N5819
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41
|
Original
|
PDF
|
1N5817,
1N5818,
1N5819
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
J-STD-002B
|
Untitled
Abstract: No abstract text available
Text: 1N5817, 1N5818, 1N5819 www.vishay.com Vishay General Semiconductor Schottky Barrier Plastic Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation
|
Original
|
PDF
|
1N5817,
1N5818,
1N5819
22-B106
DO-204AL
DO-41)
2002/95/EC.
2002/95/EC
2011/65/EU.
|
1N5819 General Semiconductor
Abstract: 1N5817 1N5818 1N5819 DO-204AL JESD22-B102D J-STD-002B
Text: 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41
|
Original
|
PDF
|
1N5817,
1N5818,
1N5819
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
08-Apr-05
1N5819 General Semiconductor
1N5817
1N5818
1N5819
DO-204AL
JESD22-B102D
J-STD-002B
|
1N5817
Abstract: 1N5818 1N5819 DO-204AL JESD22-B102 J-STD-002 1N5819 General Semiconductor 1N5819 Vishay
Text: 1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41
|
Original
|
PDF
|
1N5817
1N5819
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
18-Jul-08
1N5818
1N5819
DO-204AL
JESD22-B102
J-STD-002
1N5819 General Semiconductor
1N5819 Vishay
|
1N5817 diode
Abstract: datasheets diode 1n5819 1/1N5819 1n5819 data sheet datasheets diode 1n5818 1N5817 1N5818 1N5819 DO-204AL JESD22-B102D
Text: 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41
|
Original
|
PDF
|
1N5817,
1N5818,
1N5819
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
08-Apr-05
1N5817 diode
datasheets diode 1n5819
1/1N5819
1n5819 data sheet
datasheets diode 1n5818
1N5817
1N5818
1N5819
DO-204AL
JESD22-B102D
|
specifications on 1n5818
Abstract: No abstract text available
Text: 1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41
|
Original
|
PDF
|
1N5817
1N5819
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
J-STD-002
JESD22-B102
specifications on 1n5818
|
1N5819
Abstract: DO-204AL RS-296-D
Text: 1N5819 Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
|
Original
|
PDF
|
1N5819
DO-204AL
1N5819
DO-204AL
RS-296-D
|
|
|
Untitled
Abstract: No abstract text available
Text: 1N5819 Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
|
Original
|
PDF
|
1N5819
DO-204AL
1N5819
11-Mar-11
|
1N5817 MELF
Abstract: 1n5819 melf vishay melf MELF Package 1N5817 1N5818 1N5819 DO-204AL melf Schottky glass MELF dimensions
Text: 1N5817 thru 1N5819 Vishay Semiconductors formerly General Semiconductor Schottky Barrier Rectifiers Features DO-204AL DO-41 • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • For use in low voltage high frequency inverters, free
|
Original
|
PDF
|
1N5817
1N5819
DO-204AL
DO-41)
DO-204AL
MIL-STD-750,
50mVp-p
4-Sep-02
1N5817 MELF
1n5819 melf
vishay melf
MELF Package
1N5818
1N5819
melf Schottky glass
MELF dimensions
|
1n5819 melf
Abstract: melf Schottky glass VISHAY 1N5819 vishay melf 1N5817 1N5818 1N5819 DO-204AL 1N5817 MELF
Text: 1N5817 thru 1N5819 Vishay Semiconductors formerly General Semiconductor Schottky Barrier Rectifiers Features DO-204AL DO-41 • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • For use in low voltage high frequency inverters, free
|
Original
|
PDF
|
1N5817
1N5819
DO-204AL
DO-41)
DO-204
MIL-STD-750,
50mVp-p
25-Jun-02
1n5819 melf
melf Schottky glass
VISHAY 1N5819
vishay melf
1N5818
1N5819
DO-204AL
1N5817 MELF
|
1N5819
Abstract: DO-204AL 1N5819 2A
Text: 1N5819 Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
|
Original
|
PDF
|
1N5819
DO-204AL
1N5819
18-Jul-08
DO-204AL
1N5819 2A
|
Untitled
Abstract: No abstract text available
Text: 1N5819 Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
|
Original
|
PDF
|
1N5819
DO-204AL
1N5819
11-Mar-11
|
1N5817
Abstract: 1N5818 1N5819 DO-204AL J-STD-002
Text: 1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106
|
Original
|
PDF
|
1N5817
1N5819
22-B106
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
11-Mar-11
1N5818
1N5819
DO-204AL
J-STD-002
|
1N5817 MELF
Abstract: 1n5819 melf MELF dimensions
Text: 1N5817 thru 1N5819 Vishay Semiconductors formerly General Semiconductor Schottky Barrier Rectifiers Features DO-204AL DO-41 • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • For use in low voltage high frequency inverters, free
|
Original
|
PDF
|
1N5817
1N5819
DO-204AL
DO-41)
50mVp-p
09-Feb-04
1N5817 MELF
1n5819 melf
MELF dimensions
|
Untitled
Abstract: No abstract text available
Text: 1N5817 thru 1N5819 Vishay Semiconductors formerly General Semiconductor Schottky Barrier Rectifiers Features DO-204AL DO-41 • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • For use in low voltage high frequency inverters, free
|
Original
|
PDF
|
1N5817
1N5819
DO-204AL
DO-41)
DO-204AL
MIL-STD-750,
50mVp-p
02-Aug-04
|
N5818
Abstract: n5819
Text: 1N5817 - 1N5819 VISHAY 1.0A SCHOTTKY BARRIER RECTIFIER / u T E M ir I POWERSEMICONDUCTOR J Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward
|
OCR Scan
|
PDF
|
1N5817
1N5819
DO-41
MIL-STD-202,
DS23001
1N5817-1N5819
N5818
n5819
|
N5817
Abstract: N5818 1N58 N5819 1N581 1n5819 die 1N5817 1N5817-1N5819 1N5818 1N5819
Text: 1N5817-1N5819 VISHAY 1.0A SCHOTTKY BARRIER RECTIFIER /l i t e w i i / POWERSEMICONDUCTOR I Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward
|
OCR Scan
|
PDF
|
1N5817-1N5819
MIL-STD-202,
DS23001
N5817-1N5819
N5817
N5818
1N58
N5819
1N581
1n5819 die
1N5817
1N5817-1N5819
1N5818
1N5819
|
