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    1N581X Search Results

    1N581X Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N581x STMicroelectronics LOW DROP POWER SCHOTTKY RECTIFIER Original PDF

    1N581X Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1N5817

    Abstract: 1N5818 1N5819 DO41
    Text: 1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV 1A VRRM 40 V Tj 150°C VF (max) 0.45 V FEATURES AND BENEFITS n n n n n VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP


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    1N581x 1N5817 1N5818 1N5819 DO41 PDF

    1N5817

    Abstract: 1N5818 1N5819 DO41 LOW DROP POWER SCHOTTKY RECTIFIER
    Text: 1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV 1A VRRM 40 V Tj 150°C VF (max) 0.45 V FEATURES AND BENEFITS n n n n n VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP


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    1N581x 1N581xRL 1N5817 1N5818 1N5819 DO41 LOW DROP POWER SCHOTTKY RECTIFIER PDF

    datasheets diode 1n5818

    Abstract: 1N5817 1N5818 1N5819 DO41
    Text: 1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF AV 1A VRRM 40 V Tj 150°C VF (max) 0.45 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP DO41 DESCRIPTION


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    1N581x 1N5817 1N5818 1N5819 datasheets diode 1n5818 1N5819 DO41 PDF

    1N581XLB

    Abstract: 1N5817 1N5818 1N5819 1N581X
    Text: CYStech Electronics Corp. Spec. No. : C331LB Issued Date : 2004.07.05 Revised Date : Page No. : 1/3 1.0Amp Silicon Schottky Barrier Rectifiers 1N581XLB Series Features • Low forward voltage drop • High current capability • High surge current capability


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    C331LB 1N581XLB DO-41 MIL-STD-202, UL94V-0 1N581XLB 1N5817 1N5818 1N5819 1N581X PDF

    1N5817

    Abstract: 1N5818 1N5819 DO41
    Text: 1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV 1A VRRM 40 V Tj 150°C VF (max) 0.45 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP DO41 DESCRIPTION


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    1N581x 1N5817 1N5818 1N5819 1N5819 DO41 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5817 - 1N5819 CREAT BY ART Pb 1.0AMP. Schottky Barrier Rectifiers DO-41 RoHS COMPLIANCE Features — Low power loss, high efficiency — High current capability, Low VF — High reliability — High surge current capability — Exitaxial construction — Guard-ring for transient protection


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    1N5817 1N5819 DO-41 DO-41 MIL-STD-202, 1N5818 300us PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-20590 rev. B 11/04 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/Features The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies,


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    PD-20590 1N5818 1N5819 1N5818/ 1N5819 08-Mar-07 PDF

    1N5818

    Abstract: datasheets diode 1n5818 1N5819 1N581X DO-204AL
    Text: Bulletin PD-20590 rev. A 05/02 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF AV Rectangular 1.0 A 30/40 V Low profile, axial leaded outline IFSM @ tp = 5 µs sine 225


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    PD-20590 1N5818 1N5819 1N5818/ 1N5819 1N5818, 1N5818 datasheets diode 1n5818 1N581X DO-204AL PDF

    datasheets diode 1n5819

    Abstract: 1N5818 1N5818-1N5819 1N581x 1N5819 DO-204AL
    Text: Bulletin PD-20590 04/01 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF AV Rectangular 1.0 A 30/40 V Low profile, axial leaded outline waveform VRRM The 1N5818/ 1N5819 axial leaded Schottky rectifier has been


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    PD-20590 1N5818 1N5819 1N5818/ 1N5819 1N581X 1N581X datasheets diode 1n5819 1N5818 1N5818-1N5819 DO-204AL PDF

    datasheets diode 1n5818

    Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    1N5817, 1N5818, 1N5819 1N5817 1N5819 r14525 1N5817/D datasheets diode 1n5818 1N5817RL 1N5818 1N5818RL 1N5819RL 1N5817-19 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5817 - 1N5819 CREAT BY ART 1.0AMP. Schottky Barrier Rectifiers DO-41 Features — Low power loss, high efficiency — High current capability, Low VF — High reliability — High surge current capability — Exitaxial construction — Guard-ring for transient protection


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    1N5817 1N5819 DO-41 DO-41 MIL-STD-202, 1N581x PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5817 thru 1N5819 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC


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    1N5817 1N5819 2011/65/EU 2002/96/EC DO-204AL DO-41) JESD22-B102 50mVp-p PDF

    1n5819 equivalent

    Abstract: No abstract text available
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817 1N5818 1n5819 equivalent PDF

    1N5817

    Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D 1N5817RL 1N5818 1N5818RL 1N5819RL PDF

    1n5819 equivalent

    Abstract: 1N5817-19 1N5817 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    1N5817, 1N5818, 1N5819 1N5817 1N5819 BRD8011/D. DO-41 1n5819 equivalent 1N5817-19 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5817 thru 1N5819 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC


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    1N5817 1N5819 2011/65/EU 2002/96/EC DO-204AL DO-41) JESD22-B102 D1307014 PDF

    1N5819 package

    Abstract: datasheets diode 1n5818 datasheets diode 1n5819 1N5817 1N5818 1N5819
    Text: 1N5817 THRU 1N5819 1.0 AMP. Schottky Barrier Rectifier FEATURES • Low forward voltage drop • High current capability • High reliability • High surge current capability DO-41 2. 2. 1. MECHANICAL DATA • Case:DO-41 Molded plastic • Epoxy:UL94V-0 rate flame retardant


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    1N5817 1N5819 DO-41 UL94V-0 DO-41 MIL-STD-202, 33grams 1N581xCE 1N5817/1N5818/1N5819 1N5819 package datasheets diode 1n5818 datasheets diode 1n5819 1N5818 1N5819 PDF

    1n5819 equivalent

    Abstract: 1n5819
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817 1N5818 1n5819 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5817 thru 1N5819 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC


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    1N5817 1N5819 2011/65/EU 2002/96/EC DO-204AL DO-41) JESD22-B102 D1307014 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5817 - 1N5819 1.0AMP. Schottky Barrier Rectifiers DO-41 Features ­ Low power loss, high efficiency ­ High current capability, Low VF ­ High reliability ­ High surge current capability ­ Exitaxial construction ­ Guard-ring for transient protection ­


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    1N5817 1N5819 DO-41 MIL-STD-202, PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5817 thru 1N5819 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC


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    1N5817 1N5819 2011/65/EU 2002/96/EC DO-204AL DO-41) JESD22-B102 50mVp-p PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Avalanche capability specified A K DO-41 Description Axial Power Schottky rectifier suited for Switch


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    1N5817, 1N5818, 1N5819 DO-41 DO-41 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS 1A I f a v V rrm Tj Vf (max) 40 V 150°C 0.45 V FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ EXTREMELY FAST SWITCHING ■ LOW FORWARD VOLTAGE DROP


    OCR Scan
    1N581x 1N5817 1N5818 1N5819 PDF

    N5818

    Abstract: No abstract text available
    Text: 1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS If av 1A V rrm 40 V Tj 150°C V f (max) 0.45 V FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ EXTREMELY FAST SWITCHING ■ LOW FORWARD VOLTAGE DROP


    OCR Scan
    1N581x N5818 PDF