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    1N6507 Price and Stock

    Microchip Technology Inc 1N6507

    TVS DIODE 14CDIP
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    Microchip Technology Inc JAN1N6507

    Arrays _ 14L CDIP, Projected EOL: 2049-02-05
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    Microchip Technology Inc JANTX1N6507

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    Microchip Technology Inc JANTX1N6507
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    Microchip Technology Inc JANTXV1N6507

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    Microchip Technology Inc JANTXV1N6507
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    1N6507 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N6507 Microsemi MONOLITHIC AIR ISOLATED DIODE ARRAY Original PDF
    1N6507 Microsemi Diode Array; Package: DIP; Cj (pF): 8; trr (nsec): 20; VF (V): 1; IF (A): 0.3; Vrrm (V): 60; Original PDF
    1N6507J Microsemi Diode Array Original PDF

    1N6507 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1N6507 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing


    Original     		PDF 1N6507 10-PIN 1N6506 1N6507

    Untitled

    Abstract: No abstract text available
    Text: 1N6507 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARAN CE These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as


    Original     		PDF 1N6507 10-PIN 1N6506

    Untitled

    Abstract: No abstract text available
    Text: 1N6507 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing


    Original     		PDF 1N6507 10-PIN 1N6506 1N6507

    1N6506

    Abstract: 10-PIN 1N6507
    Text: 1N6507 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as


    Original     		PDF 1N6507 10-PIN 1N6506 1N6506 1N6507

    MSC1018

    Abstract: 1N6507
    Text: 1N6507 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY 10 2 3 FEATURES: • • • • 4 HERMETIC CERAMIC PACKAGE Bv > 60V at 10uA Ir < 100nA at 40V


    Original     		PDF 1N6507 100nA 100mAdc 500mAdc 200mAdc, 20mAdc, 300us MSC1018 1N6507

    diode 474 a

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 DEVICES LEVELS 1N6507 JAN JANTX JANTXV DESCRIPTION These low capacitance diode arrays with common anode are multiple, discrete,


    Original     		PDF MIL-PRF-19500/474 1N6507 10-PIN 1N6506 T4-LDS-0085 diode 474 a

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


    Original     		PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251

    Untitled

    Abstract: No abstract text available
    Text: 1N6506 Monolithic Air Isolated Diode Array SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by


    Original     		PDF 1N6506 10-PIN 1N6507

    1N6496

    Abstract: 1N6101 1n6511 1N6506 1N6507 1N5768 1N5770 1N5772 1N5774 1N6100
    Text: INCH-POUND MIL-PRF-19500/474G 22 August 2008 SUPERSEDING MIL-PRF-19500/474F 23 January 2007 The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 November 2008. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,


    Original     		PDF MIL-PRF-19500/474G MIL-PRF-19500/474F 1N5768, 1N5770, 1N5772, 1N5774, 1N6100, 1N6101, 1N6496, 1N6506, 1N6496 1N6101 1n6511 1N6506 1N6507 1N5768 1N5770 1N5772 1N5774 1N6100

    1N6506

    Abstract: 10-PIN 1N6507
    Text: 1N6506 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for


    Original     		PDF 1N6506 10-PIN 1N6507 1N6506 1N6507

    linfinity

    Abstract: MIL-S-19500/474 1N5768 14 pin dip diode array linfinity 8 ceramic dip "pin to pin" SG5768F SG6509 55c diode 1N5772
    Text: SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. • 60V minimum breakdown voltage • 500mA current capability per diode


    Original     		PDF SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509 500mA 14-PIN SG6509J 1N6509) linfinity MIL-S-19500/474 1N5768 14 pin dip diode array linfinity 8 ceramic dip "pin to pin" SG5768F SG6509 55c diode 1N5772

    1N5770

    Abstract: No abstract text available
    Text: INCH-POUND MIL-PRF-19500/474F 23 January 2007 SUPERSEDING MIL-PRF-19500/474E 3 November 1997 The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 March 2007. * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,


    Original     		PDF MIL-PRF-19500/474F MIL-PRF-19500/474E 1N5768, 1N5770, 1N5772, 1N5774, 1N6100, 1N6101, 1N6496, 1N6506, 1N5770

    10-PIN

    Abstract: 1N6507 mx marking
    Text: 6506A Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for


    Original     		PDF 10-PIN 1N6507 1N6507 mx marking

    Untitled

    Abstract: No abstract text available
    Text: 1N6506 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARAN CE These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for


    Original     		PDF 1N6506 10-PIN 1N6507

    Untitled

    Abstract: No abstract text available
    Text: J Z ^ r\/E O HLHB5 1N6507 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: • • • • HERMETIC CERAMIC PACKAGE Bv > 60V at 10uA


    OCR Scan     		PDF 1N6507 100nA 100mAdc 500mAdc 200mAdc, 20mAdc, 300us MSC1018

    U11H

    Abstract: linfinity 8 ceramic dip ir U11H
    Text: i i N f r v SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509 m M I C R O E L E C T R O N I C S DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.


    OCR Scan     		PDF SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509 500mA MIL-S-19500 0QD355D 14-PIN SG6509J U11H linfinity 8 ceramic dip ir U11H

    SG5772F

    Abstract: No abstract text available
    Text: LIN Doc #; 5768 SGS768/SG5770/SG5772/SG5774 SG6506/SG6507/SG6508/SG6509 D T he I n f i n i t e P o w e r o f I n n o v a t i i ode A P r o d u c t i o n DESCRIPTION T he Linfinity series o f d io d e arrays fe a tu re h ig h b re a k d o w n , h ig h s p e e d


    OCR Scan     		PDF SGS768/SG5770/SG5772/SG5774 SG6506/SG6507/SG6508/SG6509 500mA SG6508J SG5772F 1N5772) SG6507J 1N6507) SG5770F 1N5770) SG5772F

    1N6506

    Abstract: No abstract text available
    Text: SG5768, SG5770, SG5772 , SG5774 SG6506/SG6507/SG6508/SG6509 M I C R O E L E C T R O N I C S DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. • 60V m inim um breakdown voltage


    OCR Scan     		PDF SG5768, SG5770, SG5772 SG5774 SG6506/SG6507/SG6508/SG6509 500mA MIL-S-19500 14-PIN SG6509J 1N6509) 1N6506