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    1N825A DIODE Search Results

    1N825A DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    1N825A DIODE Price and Stock

    Microchip Technology Inc 1N825A

    Zener Diode, Temperature Compensating, 5.9V to 6.5V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N825A 232
    • 1 -
    • 10 $4.3
    • 100 $3.5
    • 1000 $3.38
    • 10000 $3.31
    Buy Now

    NTE Electronics Inc 1N825A

    Zener Diode - 6.2 V - ±5% Tolerance - 500 mW - 10 Ohms Impedance - DO-204AH, DO-35, Axial Package - Through Hole.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N825A 2
    • 1 $0
    • 10 $0
    • 100 $0
    • 1000 $0
    • 10000 $0
    Buy Now

    1N825A DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1n825a

    Abstract: LM390
    Text: 1N825A Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N825A Availability Online Store


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    PDF 1N825A 1N825A STV3208 LM3909N LM390

    BAX12 equivalent

    Abstract: 1N4532 1n823a BAT721S BAX18 equivalent plva600a 1PS301 1PS59SB10 BFS20W BF840
    Text: Philips Semiconductors Small-signal Transistors and Diodes Index TYPE NUMBER TYPE NUMBER TYPE NUMBER 1N821 1PS76SB70 BAL74 1N821 1PS79SB10 BAL74W 1N823 1PS79SB40 BAL99 1N823A 1PS79SB70 BAL99W 1N825 1PS88SB48 BAS16 1N825A 1PS89SB14 BAS16T 1N827 1PS89SB15 BAS16W


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    PDF 1N821 1PS76SB70 BAL74 1PS79SB10 BAL74W 1N823 1PS79SB40 BAL99 1N823A BAX12 equivalent 1N4532 1n823a BAT721S BAX18 equivalent plva600a 1PS301 1PS59SB10 BFS20W BF840

    zener diode code

    Abstract: zener diode mv 5 zener 55c temperature compensated zener diode 6.2V Zener Diode Standard EIA-481-1-A zener diode reference guide EIA-481-1 zener diode specifications 55c zener diode
    Text: PRODUCT announcement Temperature Compensated Zener Diode CMKTC825A SOT-363 features Sample Devices • VZ = 6.2V • ∆VZ = 44mV over Temperature range -55˚C to + 100˚C available • Ideal alternative to leaded 1N825A upon request. description The Central Semiconductor CMKTC825A is a


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    PDF CMKTC825A OT-363 1N825A CMKTC825A 325mW EIA-481-1-A zener diode code zener diode mv 5 zener 55c temperature compensated zener diode 6.2V Zener Diode Standard EIA-481-1-A zener diode reference guide EIA-481-1 zener diode specifications 55c zener diode

    48 zener diode

    Abstract: 1N825A 48 zener zener diode datasheets zener 35 zener diode data sheet zener diode mv 5 temperature compensated zener diode zener diode circuit "Zener Diode"
    Text: Temperature Compensated Zener Diode POWER 500 mW CASE DO-35 CASE ZENER TEST CURRENT MAXIMUM ZENER IMPEDANCE VOLTAGE TEMPERATURE STABILITY* VZ @ IZT IZT ZZT @ IZT ∆ VZ MAX VOLTS mA Ω mV %/oC 1N821A 6.2 7.5 10 96 0.01 1N823A 6.2 7.5 10 48 0.005 1N825A 6.2


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    PDF DO-35 1N821A 1N823A 1N825A 1N827A 1N829A 48 zener diode 1N825A 48 zener zener diode datasheets zener 35 zener diode data sheet zener diode mv 5 temperature compensated zener diode zener diode circuit "Zener Diode"

    zener 7.5 35

    Abstract: 1n825a 1N825A DIODE
    Text: Temperature Compensated Zener Diode POWER 500 mW CASE DO-35 CASE ZENER TEST CURRENT MAXIMUM ZENER IMPEDANCE VOLTAGE TEMPERATURE STABILITY* VZ @ IZT IZT ZZT @ IZT ∆ VZ MAX VOLTS mA Ω mV %/oC 1N821A 6.2 7.5 10 96 0.01 1N823A 6.2 7.5 10 48 0.005 1N825A 6.2


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    PDF 1N821A 1N823A 1N825A 1N827A 1N829A DO-35 zener 7.5 35 1N825A DIODE

    Zener Diode 3v 400mW

    Abstract: 1n821 "cross-reference" 1N825 apd 1N821-1N829 1n4575a "cross-reference"
    Text: AMERICAN POWER DEVICES S3E D 073713S QDDDDn 1 / - t{~ a -7 T C Z E N E R DIODES 250mW, TC Type DO-7 Case Voltage Maximumt mperature Dynamic Impedance TeS tability Z7T@ '7T n mV 15 96 10 96 15 48 48 10 19 15 10 19 15 9 10 9 15 5 10 5 Zener Voltage Test MIn. Max. Current


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    PDF 073713S 250mW, I713S DQQD114 Zener Diode 3v 400mW 1n821 "cross-reference" 1N825 apd 1N821-1N829 1n4575a "cross-reference"

    1N827A

    Abstract: 1N829A 1N821 1N829 DIODE 1N827 1N825 1N825A 1N821A 1N823 1N823A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D050 1N821 to 1N829 1N821A to 1N829A Voltage reference diodes Product specification Supersedes data of March 1991 1996 Mar 20 Philips Semiconductors Product specification 1N821 to 1N829 1N821A to 1N829A Voltage reference diodes


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    PDF M3D050 1N821 1N829 1N821A 1N829A DO-34) 1N827A 1N829A 1N829 DIODE 1N827 1N825 1N825A 1N823 1N823A

    Untitled

    Abstract: No abstract text available
    Text: AMERICAN POWER DEVICES S3E D 073713S QDDDDn 1 / - t{~ a -7 T C Z E N E R DIODES 250mW, TC Type DO-7 Case Voltage Maximumt mperature Dynamic Impedance TeS tability Z7T@ '7T n mV 15 96 10 96 15 48 48 10 19 15 10 19 15 9 10 9 15 5 10 5 Zener Voltage Test MIn. Max. Current


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    PDF 073713S 250mW, DO-35 3713S

    1N821A

    Abstract: 1N823A 1N825A 1N827A 1N829A NTE 1N827A
    Text: 1N821A thru 1N829A Zener Diode, Temperature Compensating, 5.9V to 6.5V Features: D DO−7 Package Absolute Maximum Ratings: TA = +25°C unless otherwise specified Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +100°C


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    PDF 1N821A 1N829A 200mA) 500mW 1N823A 1N825A 1N827A 1N823A 1N825A 1N827A 1N829A NTE 1N827A

    NTE 1N827A

    Abstract: 5.9v zener 1N821A
    Text: 1N821A thru 1N829A Zener Diode, Temperature Compensating, 5.9V to 6.5V Features: D DO−7 Package Absolute Maximum Ratings: TA = +25°C unless otherwise specified Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +100°C


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    PDF 1N821A 1N829A 200mA) 500mW 1N823A 1N825A 1N827A 1N829A 526-1N821A NTE 1N827A 5.9v zener

    55C 15 ZENER DIODE

    Abstract: zener 7.5 B 50 temperature compensated zener diode 55c zener diode zener 7.5 B 48 zener diode mv 5 1N821A 1N823A 1N825A zener diode 7.5 b
    Text: DATA SHEET 1N821A THRU 1N829A TEMPERATURE COMPENSATED ZENER DIODE JEDEC DO-35 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N821A Series types are temperature compensated Zener Diodes designed for applications where long-term stability is required. MAXIMUM RATINGS TA=50°C unless otherwise noted


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    PDF 1N821A 1N829A DO-35 1N821A 1N823A 1N825A 1N827A 1N829 55C 15 ZENER DIODE zener 7.5 B 50 temperature compensated zener diode 55c zener diode zener 7.5 B 48 zener diode mv 5 1N823A 1N825A zener diode 7.5 b

    marking sot 5 pin

    Abstract: zener diode pin configuration marking code pa sot-26 marking MA sot-363 marking pa sot-363 c935 pa sot-363 sot363 6.2V Zener Diode on semiconductor marking code sot
    Text: PRODUCT announcement Temperature Compensated Zener Diodes CMKTC825A CMKTC825E CMXTC935A SOT-26 Sample Devices available upon request. SOT-363 features • VZ = 9.0V • VZ = 6.2V • ΔVZ = 95mV* • ΔVZ = 44mV* CMKTC825A 20mV* (CMKTC825E) • Ideal alternative to


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    PDF CMKTC825A CMKTC825E CMXTC935A OT-26 OT-363 CMKTC825A) CMKTC825E) 1N935A CMKTC825A 1N823A marking sot 5 pin zener diode pin configuration marking code pa sot-26 marking MA sot-363 marking pa sot-363 c935 pa sot-363 sot363 6.2V Zener Diode on semiconductor marking code sot

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N821 1N829A DO-35 CASE TEMPERATURE COMPENSATED ZENER REFERENCE DIODE 6.2 & 6.55 Volt MAXIMUM RATINGS 1N821 1N829A Operating and storage temperature -65° to +175°C DC power dissipation 500mW @ 25°C Derating solder temperatures


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    PDF 1N821 1N829A DO-35 500mW 1N823 1N823A 1N824â MIL-PRF-19500,

    Untitled

    Abstract: No abstract text available
    Text: • 1N821-1,1N823-1,1N825-1,1N827-1 AND 1N829-1 AVAILABLE INJAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/159 1N821 thru 1N829A and 1N821-1 thru 1N829-1 • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION


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    PDF 1N821-1 1N823-1 1N825-1 1N827-1 1N829-1 MIL-PRF-19500/159 1N821 1N829A 1N829-1

    1N823A

    Abstract: 1N825A 1N821A 1N827A 1N829A 1N825A DIODE DIODE LG3
    Text: r 61C Ci:~ &L SEMICONDUCTOR bî V l ' V i U t j ^ U UT-äiJ gQSïiSl^fëSilffiSÊ !? ®@L?g3. eOBBSPEOB „ de _ na^ta 00269 □oao2t.cï □ | 1N823Ä 1N825A 1N827A . 1N829A e Bïfti’gil g®Bllte@5B18ilietSB' c©s°p. central sem iconductor Corp. TEMPERATURE COMPENSATED


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    PDF 1N821A 1N823A 1N825A 1N827A 1N829A 1N829A 1N825A DIODE DIODE LG3

    B1 7 zener

    Abstract: 1N825A 1N821A 1N823A 1N827A 1N829A T-75 DIODE ZENER A34
    Text: ‘C” r : T r * l r gQSBlSI^fëSilffiSÊ !? ®@5i3. eSBBSPEaB W Æ m m m m M & im 61C sem ic o n du cto r T î de ••" in a ^ t ^ □ o q o 2 l. cï 00269 □ | ' •" T ~ - o? 1Ng2 iA 1N823A 1N825A 1N827A . 1N829A ®@pß9. e Bîfti’gii ^QBaltegjBlgilietSB' C©S°p.


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    PDF 1N821A 1N823A 1N825A 1N827A 1N829A 1N827A B1 7 zener 1N829A T-75 DIODE ZENER A34

    temperature-compensated zener

    Abstract: ITT ZENER 1N825 ZENER 1N4772 1N4770A 1N4770 1N4773A 1N4771A 1N3497 1N821
    Text: FENWAL E L E C T R O N I C S / APD AB 63D DEÌ3Sm Sh3 00916 -f a V □□ □ o n t a " I" TCZENER DIODES T 250mW, TC Type DO-7 Case Zener Voltage Min. Max. vz V Vz V 1N825A 1N827 1N827A 1N829 1N829A 5.9 5.9 6.5 6.5 -5 5 -5 5 -5 5 -5 5 -5 5 °C t o +100 t o +100


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    PDF 250mW, 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 temperature-compensated zener ITT ZENER 1N825 ZENER 1N4772 1N4770A 1N4770 1N4773A 1N4771A 1N3497

    Untitled

    Abstract: No abstract text available
    Text: r C i : : ~ &L 61C SEMICONDUCTOR bî V l ' V i U t j ^ U UT-äiJ gQSïiSl^fëSilffiSÊ !? ®@L?g3. eOBBSPEOB g®BMie@6ieai9e€ p ®@Pß9. e©Bïfti’gil „ de _ n a ^ t a □ o a o 2 t . cï | T - ff- o'? 1Ng2 i A 1N823Ä 1N825A 1N827A . 1N829A TEMPERATURE COMPENSATED


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    PDF 1N823Ã 1N825A 1N827A 1N829A 1N821A CBR25Ser/es CBR30 0000SE3 O-105 O-106

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product speeificttton 1N821 to 1N829 1N821A to 1N829A Voltage reference diodes FEATU RES DESCRIPTION • Temperature compensated Voltage reference diode in a hermetically-sealed SOD68 DO-34 glass • Reference voltage range: 5.89 to 6.51 V (typ. 6.20 V)


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    PDF 1N821 1N829 1N821A 1N829A DO-34)

    1N821

    Abstract: N821A mbq534 1N821A N821 S0068 1N823 1N823A 1N825 1N829
    Text: Product specification Philips Semiconductors 1N821 to 1N829 1N821A ,0 1N829A Voltage reference diodes FEATURES DESCRIPTION • Temperature compensated Voltage reference diode in a hermetically-sealed SOD68 DO-34 glass • Reference voltage range: 5.89 to 6.51 V (typ. 6.20 V)


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    PDF 1N821 1N829 1N821A N82gA DO-34) MAM216 G1G125? N821A mbq534 1N821A N821 S0068 1N823 1N823A 1N825 1N829

    1N827A

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors 1N821 to 1N829 1N821A to 1N829A Voltage reference diodes FEATURES DESCRIPTION • Temperature compensated Voltage reference diode in a hermetically-sealed SOD68 DO-34 glass package. • Reference voltage range:


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    PDF 1N821 1N829 1N821A 1N829A DO-34) MAM216 1N827A

    DO-34

    Abstract: BA231 BAV45A BAT81 1N825A
    Text: Small Signal Leaded Devices Detection Diode Diode Capacitance Type BA231 Pkg VR V If (mA) cd (pF) DO-35 50 200 1.2 @ VR (V) and VF (mV) f (MHz) 'F {(xA) 360-420 1 (w 10 Low Leakage Diodes •f (V) (mA) TO-18 DO-34 20 125 50 225 5pA 1nA •r @ u. BAV45,A


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    PDF BA231 DO-35 BAV45 BAS45 DO-34 BA480 BA481 BAT81 BAT82 BAT83 DO-34 BA231 BAV45A 1N825A

    BAV45A

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 2SE «D • bbSaTBl aaiblfi'l S ■ 'f'03-'0ct Small Signal Devices LOW LEAKAGE DIODES TYPE PKG BAV45A BAS45 TO-18 DO-34 Vr V 20 125 ¥ |r 50 225 5pA 1nA (m A l (S VF (V ) 1.00 0.80 Vr m 5 125 @ r If (m A> I 10 ■ 5 c <f - " 600


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    PDF BAV45A BAS45 DO-34 BAT81 BAT82 BAT83 BAT85 BAT86 BYV10-20 BYV10-30 BAV45A

    BAV45A

    Abstract: do-34 DO-34 ZENER 1N827A 1N829 BAV45 Zener Diodes 6.2 V BYV10-30 BAS45 BAT81
    Text: N AMER PHILIPS/DISCRETE 2SE «D • bbSSTSl OGltilô'i S ■ T ' 0 3 - ' 0 £f Small Signal Devices 11 LOW LEAKAGE DIODES TYPE PKG BAV45A BAS45 TO-18 DO-34 Vr V (m Ai ¥ IR 20 125 50 225 5pA 1nA Vp (V) 1.00 0.80 Vft @ m f 5 125 @ r Ip (rnAK I 1°5 • ■


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    PDF febS3131 T-03-09 BAV45A BAS45 DO-34 BAT81 200nA BAT82 DO-34 ZENER 1N827A 1N829 BAV45 Zener Diodes 6.2 V BYV10-30