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    1N5824

    Abstract: 1n5823 1N5825 1N5827
    Text: D f T | L ,3 b 7 H 5 5 6367255 0 0 3 flim MOTOROLA 1 SC DIODES/OPTO 34C 38141 D T -6 3 -Ò 5 SILICON R ECT IFIER D ICE (continued) IC5825 DIE NO. LINE SOURCE — DRL756 This die provides performance equal to or better than that of the following device types:


    OCR Scan     		PDF DRL756 1N5823 1N5824 1N5825 1NS826 1N5827 1N582B IC5825 119x119m

    SSF164

    Abstract: No abstract text available
    Text: Schottkv Rectifiers Part Number ! i SSF1625 MS1625 SSF1635 SSF1635 USD1635ACT USD735 SCH USD735C USD935 MS1E35 SSF1640 USD740 USD740C USD940 SSF1645 SSF1645 USD164SACT USD745 USD745C USD945 MS1645 SSF1680 MS1680 SSF1690 MS1690 MS16100 USD6503 FST202S FST2030


    OCR Scan     		PDF SSF1625 MS1625 SSF1635 USD1635ACT USD735 USD735C USD935 MS1E35 SSF1640 SSF164

    ST T4 0570

    Abstract: 2N4233A 2N4231A transistor 2N6312 Sm T4 0570
    Text: 2N4233A Œ i / I O S r 5.0 AMPERE SIUCON POWER TRANSISTOR MEDIUM-POWER SILICON TRANSISTOR 80 V O L T S 75 W A T T S .designed for general-purpose power amplifier and switching applications. • Low Collector-Emitter Saturation Voltage VCE sat = 0.7 Vdc (Max) @ lc = 1.5 Ade


    OCR Scan     		PDF 2N4233A 2N4231A 2N6312 2N6314 1NS826 MSD6100 ST T4 0570 2N4233A transistor 2N6312 Sm T4 0570