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    1P3M Price and Stock

    Vishay Semiconductors SS1P3-M3/84A

    DIODE SCHOTTKY 30V 1A DO220AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SS1P3-M3/84A Reel 30,000 3,000
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    • 10000 $0.06448
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    SS1P3-M3/84A Cut Tape 2,907 1
    • 1 $0.43
    • 10 $0.303
    • 100 $0.1531
    • 1000 $0.09269
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    Vishay Semiconductors MSS1P3-M3/89A

    DIODE SCHOTTKY 30V 1A MICROSMP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MSS1P3-M3/89A Reel 18,000 4,500
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    MSS1P3-M3/89A Cut Tape 13,218 1
    • 1 $0.39
    • 10 $0.275
    • 100 $0.1389
    • 1000 $0.08409
    • 10000 $0.07075
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    MSS1P3-M3/89A Digi-Reel 1
    • 1 $0.39
    • 10 $0.275
    • 100 $0.1389
    • 1000 $0.08409
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    RS MSS1P3-M3/89A Bulk 9,000
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    New Advantage Corporation MSS1P3-M3/89A 9,000 1
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    Vishay Semiconductors SS1P3-M3/85A

    DIODE SCHOTTKY 30V 1A DO220AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SS1P3-M3/85A Reel 10,000
    • 1 -
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    • 10000 $0.06448
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    Vishay Intertechnologies MSS1P3-M3/89A

    1A,30V,SM SCHOTTKY RECT. e3 - Product that comes on tape, but is not reeled (Alt: 99AC4166)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MSS1P3-M3/89A Ammo Pack 16 Weeks, 5 Days 1
    • 1 $0.389
    • 10 $0.254
    • 100 $0.123
    • 1000 $0.123
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    MSS1P3-M3/89A Ammo Pack 9 Weeks, 6 Days 1
    • 1 $0.11
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    MSS1P3-M3/89A Reel 8 Weeks 9,000
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    Mouser Electronics MSS1P3-M3/89A 7,560
    • 1 $0.37
    • 10 $0.231
    • 100 $0.109
    • 1000 $0.071
    • 10000 $0.056
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    Newark MSS1P3-M3/89A Cut Tape 1,300 1
    • 1 $0.016
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    MSS1P3-M3/89A Cut Tape 348 1
    • 1 $0.026
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    MSS1P3-M3/89A Reel 9,000
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    TTI MSS1P3-M3/89A Reel 9,000 4,500
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    Avnet Asia MSS1P3-M3/89A 10 Weeks 9,000
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    Chip1Stop MSS1P3-M3/89A 13,500
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    MSS1P3-M3/89A 6,345
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    • 1000 $0.0559
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    MSS1P3-M3/89A Cut Tape 4,500
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    • 1000 $0.0514
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    EBV Elektronik MSS1P3-M3/89A 9 Weeks 4,500
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    Omega Engineering MMDWU2.5C1P3MD6T1A4CE

    0 TO 2.5 PSI, <0.1% ACCURACY, CURRENT, 4 TO 20 MA 1/4", NPT FEMALE, MINI DIN 43650 C, 4 TO 60 , C (40 TO 140 , F) - Bulk (Alt: MMDWU2.5C1P3MD6T1A)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MMDWU2.5C1P3MD6T1A4CE Bulk 6 Weeks 1
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    1P3M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    INTERMETal diode

    Abstract: zener diode BN NMOS transistor 0.18 um CMOS BPSG
    Text: 0.6um 1P3M High Voltage 12V / 12V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,12V/12V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side


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    PDF 2V/12V INTERMETal diode zener diode BN NMOS transistor 0.18 um CMOS BPSG

    1P3M

    Abstract: 530 transistor
    Text: 0.6um 1P3M Logic 5V updated in Oct 01, 2004 Features ƒ Vdd Core/IO 5V / 5V ƒ Starting Material P-type (100), 9~12 Ω/□ ƒ Well Structure CMOS Twin-well ƒ Isolation Conventional LOCOS ƒ Transistor Channel Buried channel PMOS Gate oxide (Electrical) 145Å


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    NMOS transistor 0.18 um CMOS

    Abstract: 1P3M LOCOS
    Text: 0.6um 1P3M High Voltage 16V / 16V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,16V/16V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side


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    PDF 6V/16V NMOS transistor 0.18 um CMOS 1P3M LOCOS

    Vg 5V

    Abstract: No abstract text available
    Text: 0.5um 1P3M Embedded Flat ROM 5V updated in Oct 01, 2004 Features ƒ Vdd Core/IO 5V/5V ƒ Starting material P-type (100), 9~12 Ω/□ ƒ Well Structure CMOS Twin-well ƒ Isolation Conventional LOCOS, Bird's Beak = 0.1 um/side ƒ Transistor Channel Buried channel PMOS


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    PDF 50um2 60um2 Vg 5V

    Untitled

    Abstract: No abstract text available
    Text: 0.6um 1P3M High Voltage 20V / 5V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V, 20V/5V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Twin-well (Nwell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side


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    Untitled

    Abstract: No abstract text available
    Text: 0.6um 1P3M Embedded Flat ROM 5V updated in Oct 01, 2004 Features ƒ Vdd Core/IO 5V / 5V ƒ Starting Material P-type (100), 9~12 Ω/□ ƒ Well Structure CMOS Twin-well ƒ Isolation Conventional LOCOS ƒ Transistor Channel Buried channel PMOS Gate oxide (Electrical)


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    LOCOS

    Abstract: DSASW0024855 1P3M
    Text: 0.5um 1P3M Logic 5V updated in 2005.03.16 Features ƒ Vdd Core/IO 5V/5V ƒ Starting material P-type (100), 9~12 Ω/□ ƒ Well Structure CMOS Twin-well ƒ Isolation Conventional LOCOS, Bird's Beak = 0.1 um/side ƒ Transistor Channel Buried channel PMOS Gate oxide (Electrical)


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    PDF Descrip-260 50um2 LOCOS DSASW0024855 1P3M

    Untitled

    Abstract: No abstract text available
    Text:       0.8um 1P3M High Voltage 40V / 40V      Features !     !         !     ! "#$  " $ %& "' *  +$  $


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    1P3M

    Abstract: No abstract text available
    Text:       0.5um 1P3M Logic 3.3V      Features ! 8 % #  ?-?8?-?8 ! !         !" " ! #$% % %& % '   )*$( +,- $)


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    Untitled

    Abstract: No abstract text available
    Text:       0. 5um 1P3M Embedded Flat ROM 5V      Features ! 8 % #  >8>8 !      !    !" " ! #$% % %& % '   )*$( +,- $)


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    Untitled

    Abstract: No abstract text available
    Text:       0.6um 1P3M High Voltage 12V / 12V      Features !     !         ! !" "        ! "   


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    a2030

    Abstract: 3CH100 Q030 PI3L110 PI3L301D PI3L301DA 3CH400
    Text: Date: Subject: March 15, 2006 Update Hynix CMOS 0.5 m 1P3M Wafer Fab Reliability Report - PI3L301D A total of 134 units successfully completed Dynamic High Temperature Operating Life (DHTOL) test with no failures for the PI3L301D device type. The units were tested for 3000 hours at a temperature of 150°C. This


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    PDF PI3L301D PI3L301D PI3L110, 3L500, 3L510 PI3USB10, 3USB20, 3USB40 PI3DBV10, 3DBV14, a2030 3CH100 Q030 PI3L110 PI3L301DA 3CH400

    Untitled

    Abstract: No abstract text available
    Text:       0.6um 1P3M High Voltage 16V / 16V      Features !     !        !         ! "!#   


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    1P3M

    Abstract: resistance
    Text:       0.5um 1P3M Logic 5V      Features ! 8 % #  ?8?8 !      !    !" " ! #$% % %& % '   )*$( +,- $) !


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    PI74AUC16244

    Abstract: PI74AUC16245 PI74SSTVF16857 PI74SSTVF16859 PI74SSTVF32852
    Text: Date: August 5, 2005 Subject: Pericom Reliability Qualification – CSM-S Fab 2’s CMOS, 0.25 µm, 2.5V, 1P3M Process Chartered Semiconductor Manufacturing – Singapore Fab 2’s CMOS, 0.25-µm, 2.5 volt, Single Poly/Triple Metal 1P3M process has been qualified to Pericom’s standard die level process


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    PDF PI74SSTVF16857 PI74SSTVF16857 Q03003 PI74SSTVF16859, PI74SSTVF32852, PI74AUC16244, PI74AUC16245. PI74AUC16244 PI74AUC16245 PI74SSTVF16859 PI74SSTVF32852

    transistor 778

    Abstract: No abstract text available
    Text:       0. 6um 1P3M Embedded Flat ROM 5V      Features !  ! " ,2,2 !     !     !    !" ! 


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    1P3M

    Abstract: No abstract text available
    Text:       0.6um 1P3M Logic 5V      Features !   *1*1 !        !     !    !    !"#$% 


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    1P3M

    Abstract: No abstract text available
    Text: 0.5um 1P3M Logic 3.3V updated in Oct 01, 2004 Features ƒ Vdd Core/IO 3.3V / 3.3V ƒ ƒ Starting material Well Structure P-type (100), 9~12 Ω/□ CMOS Twin-well ƒ Isolation Conventional LOCOS, Bird's Beak = 0.1 um/side ƒ Transistor Channel Buried channel PMOS


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    PDF 50um2 1P3M

    vertical pnp bjt

    Abstract: 1000 hz cmos Image Sensors CMOS Process Family XO035 1P3M X-Fab 18VERTICAL BSIM3v3.2 VTB photo diodes
    Text: 0.35 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XO035 Modular CMOS Technology For Fast Optical Applications XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. Module Overview CORE MOS It is especially suited for applications needing


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    PDF XO035 XO035 405nm 650nm vertical pnp bjt 1000 hz cmos Image Sensors CMOS Process Family 1P3M X-Fab 18VERTICAL BSIM3v3.2 VTB photo diodes

    CMOS

    Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model
    Text: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular


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    PDF FC025 FC025 25-micron CMOS AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model

    228 AN

    Abstract: 1P2M CARSEM PI74SSTV16857 TSSOP56
    Text: Date: May 10, 2004 - Update Subject: CSMS Fab 2 CMOS 0.35mm Wafer Fab Reliability Report - PI74SSTV16857 This product is manufactured for Pericom by CSM-S, Fab 2 facility in Singapore, using a 0.35-micron, CMOS, 1P2M, 3.3-volt process that has been qualified for several years. It generically covers CSMS’s


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    PDF PI74SSTV16857 35-micron, TSSOP56, 228 AN 1P2M CARSEM PI74SSTV16857 TSSOP56

    HYNIX lot date code

    Abstract: 363P 686u 747p 415P 1P2M PI5V330 PI5V331 PI5C3125 PI5C3126
    Text: 3545 North First St. • San Jose, CA 95134 • USA PRODUCT/PROCESS CHANGE NOTICE PCN PCN Number: 04-07 Date Issued: April 8, 2004 Product(s) Affected: PI5C3257, PI5C33X257, and PI5V330 Manufacturing Location Affected: Hynix Semiconductor, Korea Date Effective: July 8, 2004


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    PDF PI5C3257, PI5C33X257, PI5V330 200-mm HYNIX lot date code 363P 686u 747p 415P 1P2M PI5V330 PI5V331 PI5C3125 PI5C3126

    733P

    Abstract: HP4156 A55B 1P3M A648 AAB0545XG PI3L301D PI3V512 A22B1 HP11667A
    Text: 3545 North First Street • San Jose, CA 95134 • USA PRODUCT/PROCESS CHANGE NOTICE PCN PCN Number: 05-22 Date Issued: December 21, 2005 Product(s) Affected: PI3V512 (all package types) Manufacturing Location Affected: N/A Date Effective: March 21, 2006 – standard 90 day waiting period


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    PDF PI3V512 200MHz 733P HP4156 A55B 1P3M A648 AAB0545XG PI3L301D PI3V512 A22B1 HP11667A

    hall sensor 333

    Abstract: 45 V dc motor drive circuit IP3M05 1P3M amplifiers circuit diagram IP3M06 IP3M13
    Text: W I W M IE B 3-Phase DC Brushless Motor Control/Drive Circuits POWER , . SEM ICO NDUCTO RS LTD STANDARD • Internal current sensing • Short circuit protection • Thermal shutdown • Single pin loop filter • Minimum external components • Reference inputs to 6 MHZ


    OCR Scan
    PDF IP3M05, IP3M06, 1P3M13 IP3M05 IP3M06 IP3M13 JP3M13 hall sensor 333 45 V dc motor drive circuit IP3M05 1P3M amplifiers circuit diagram IP3M06 IP3M13