w21 transistor
Abstract: 2C3251AHV 2C3X AICB
Text: MOTOROU Order this dooument by 2C3251AHV/D SEMICONDUCTOR TECHNICAL DATA o 2C3251AHV Chip . PNP Silicon Small-Signal Transistor III ,~4 , ~ti m - I Rating E o ELECTRICAL CHARACTE~@~,@UA = 25°C unlessOthetise noted.) Chamdu*$:# symbol I Mln Max I Unit OFF CHARACTERISll&$j?;!
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2C3251AHV/D
2C3251AHV
1500C)
1PHW4101
w21 transistor
2C3X
AICB
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MOTOROLA 2n2920
Abstract: 2N2920 2N2920JAN
Text: MOTOROU Order this document by 2N2920JANID SEMICONDUCTOR TECHNICAL DATA @ 2N2920JAN, JTX, JTXV, JANS Processed per MIL4-I ,111, t ,11111 411 .,.:,>$’ \.>.l , c*\~ ~!.?,:$,! a- 9500/355 ual N,PNSilicon Small+ ignal Transistors .!. 3 Unit Vdc Vdo VEBO Emitter+ase Vohge
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2N2920JANID
2N2920JAN,
S50SS.
1PHW4101
2N292W~
MOTOROLA 2n2920
2N2920
2N2920JAN
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2N3506
Abstract: 2N3507 2N3506JTX 2N3506 MOTOROLA 2N3507JTX 2NW06 15-ADO
Text: MOTOROU Orderthis dooument bv2N850WWD SEMICONDUCTOR TECHNICAL DATA 2N3506JTX, JTXV 2N3507JTX, JTXV Processed per MIL+-~9500/349 NPN Silicon Small+ ignal Transistors . . designed for genera~urpose switchingapplications. .,. ,. CASE 7W TM05AD r- mntinued)
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bv2N850WWD
2N3506JTX,
2N3507JTX,
TM05AD
2NW06
2NW07
300Vdc)
2N3506
1PHW41011-2
2NS50MWD
2N3506
2N3507
2N3506JTX
2N3506 MOTOROLA
2N3507JTX
15-ADO
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2C3019HV
Abstract: 5Bp transistor Transistor 5bp
Text: MOTOROU Order ~le document by2C3019HV/D SEMICONDUCTOR TECHNICAL DATA e 2C3019HV Chip NPN Silicon Small*ignaI Transistor .deeigned for dc to VHF ampfifier applications and general+urpose switching. . V BR CEO = 80 Vdc . hFE = 100 Min @ 150 mAdc . VCE(sat) = 0.2 Vdc Ma @ 150 mAdc
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by2C3019HV/D
2C3019HV
2CW19HVID
1PHW4101
5Bp transistor
Transistor 5bp
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w21 transistor
Abstract: 2N3764 2N3764JTX MIL-19500 MOTOROLA LON motorola MN transistor Motorola transistor 358
Text: . MoToRom Order this document by 2N3764~WD SEMICONDUCTOR TECHNICAL DATA ● 2N3764JTX, JTXV, JANS Processed per MIL+-19500/396 PNP Silicon Smal14ignal Transistor .designed for genera~urpose switching applications. ● Emtisr+ase Vohge * Colleotor Current — Cotinuous
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2N3764
2N3764JTX,
Smal14ignal
TW06AB
1PHW4101
2N37WTWD
w21 transistor
2N3764JTX
MIL-19500
MOTOROLA LON
motorola MN transistor
Motorola transistor 358
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Q2N44
Abstract: 06AF 2N44 motorola MN transistor 2N4416AJTX
Text: MOTOROU Order this document by2N416AJTWD SEMICONDUCTOR TECHNICAL DATA o 2N4416AJTX, JTXV Processed per MlL-l 9500/428 N+hannel, Small+ignal Field Effect Transistor CASE 2W3, T=06AF .:’.~{.3” ELECTRICAL CHARACTERISTICS WA= #~@& *\A .*.<* Characterlstlc ., “$}$,w
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by2N416AJTWD
2N4416AJTX,
1PHW4101
2N4416AJWD
Q2N44
06AF
2N44
motorola MN transistor
2N4416AJTX
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2N3634 MOTOROLA
Abstract: m21 transistor 2N3634 2N3637 transistor m21 MIL-19500 2N3634JTX 2N3635 2N3635JTX 2N3636
Text: MOTOROU Orderth18 document by2N3WWD SEMICONDUCTOR TECHNICAL DATA o 2N3634JTX, 2N3635JTX, 2N3636JTX, 2N3637JTX, JTXV JTXV, JANS JTXV, JANS JTXV, JANS Processed per MIL+-19500/357 PNP Silicon SmallSignal o General-Purpose Transistor Ic Collector Current,Maimurn
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Orderth18
2N3634JTX,
2N3635JTX,
2N3636JTX,
2N3637JTX,
CHARACTERlST19
2N3634,
2N3635
2N3636,
2N3637
2N3634 MOTOROLA
m21 transistor
2N3634
2N3637
transistor m21
MIL-19500
2N3634JTX
2N3635
2N3635JTX
2N3636
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L1201
Abstract: 2N2060J 2N2060JTX small signal transistor
Text: , MOTOROW Order thie document by 2N2080JWD SEMICONDUCTOR TECHNICAL DATA ● *{iv \ :,+ \ ‘! .,? .>W, : \ .,i. ,: . ~ ,:, , , IIUlp 2N2060JTX, JANS Processed per MIL4-195001270 J ’11. ~1. .8:6 : qo ~ Dual NPN Silicon Smal14ignal Transistor .dasignedfor genera~urpose amptifierap~oations.
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2N2080JWD
2N2060JTX,
MIL4-195001270
Smal14ignal
1PHW4101
2N20MJTND
L1201
2N2060J
2N2060JTX
small signal transistor
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tiac
Abstract: 2N301 2N3013JTX
Text: MOTOROU Order this document by 2N3013J~D SEMICONDUCTOR TECHNICAL DATA o 2N3013JTX Processed per MlL4-19500/287 NPN Silicon Smal14ignal Transistor .designed for genera+urpose switching applications. ,.i;:” .:*,%, ,1,>< ,\:.!\tf, , ., ,. Y MAXIMUM RATINGS
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2N3013J
2N3013JTX
MlL4-19500/287
Smal14ignal
CASE2243,
206AA
2D91Z
1PHW4101
2N301
tiac
2N3013JTX
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2N3467
Abstract: 2N3467J 2N3467JTX PHW4101
Text: MOTOROU Orderthls document by 2N3467J~ SEMICONDUCTOR TECHNICAL DATA 2N3467JTX, JTW Processed per MlL4-f9500/348 PNP Silicon Small+ignal Transistors .designed for genera~urpose _ng applications. $“’? ;, ‘:,!.~’. MAXIMUM Rsting I Symbol I 2N3467 Colleotor-Emtier Vohge
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2N3467J~
2N3467JTX,
MlL4-f9500/348
2N3467
MK145BP,
PHW4101
2NM67JTXD
2N3467
2N3467J
2N3467JTX
PHW4101
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2N3440 MOTOROLA
Abstract: 2n3439 motorola MOTOROLA 2N3440 2N3439 LF036 Y14W 5bp 2n 2N3439JAN 2N3440 2N3440JTX
Text: MOTOROU Orderthls document by 2N3439JANID SEMICONDUCTOR TECHNICAL DATA o 2N3439JAN, JTX, JTXV 2N3440JTX, JTXV Processed per MIL4-I 9500/368 NPN Silicon Small+ignal Transistors .designed for tighvoltage amplifier applications. MAXIMUM RATINGS Rsttng Symbol
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2N3439JANID
2N3439JAN,
2N3440JTX,
1PHW4101
2N3439JAN/D
2N3440 MOTOROLA
2n3439 motorola
MOTOROLA 2N3440
2N3439
LF036
Y14W
5bp 2n
2N3439JAN
2N3440
2N3440JTX
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