IRC630
Abstract: No abstract text available
Text: International S Rectifier PD -9.565B IRC630 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 200V R DS on = 0 . 4 0 0 lD = 9 .0 A
|
OCR Scan
|
PDF
|
IRC630
0-40O
IRC630
|
IRCZ34 equivalent
Abstract: 1RCZ44 IRCZ34 C024
Text: International IO R Rectifier HEX Part Size Number HEXFET Power MOSFETs Cp>v N fF fN A '- C 'S /- . www.irf.com r S iw H r 'C - Vos Recommended Source Bonding Wire ^DS on Die Outline Figure mils mm Equivalent Device Type IRCZ24 HEXSense® Die N-Channel :
|
OCR Scan
|
PDF
|
1RCC330
IRCZ24
IRCZ34
IRC530
1RC630
1RC630
IRCZ34 equivalent
1RCZ44
C024
|
IRCZ34
Abstract: No abstract text available
Text: HEXFEl Power MOSFETs International IQR Rectifier >D V BR DSS Part Number Drain-to-Source R DS(on) Continuous Breakdown On-State Drain Current Voltage Resistance 25°C (V) (A) R h Max. Thermal Max. Power Resistance Dissipation (°C/W) (WO Nominal Sense
|
OCR Scan
|
PDF
|
O-220
IRCZ24
IRCZ34
IRCZ44
IRC530
IRC540
1RC630
IRC640
IRC634
IRC644
|