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    1RF9Z34N

    Abstract: IRF9Z34N 1RF9Z34 RF1010
    Text: PD - 9.1485A International IG R Rectifier IRF9Z34N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Plating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V dss = -55V ^ D S o n = 0 . 1 0 Q


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