1rfz30
Abstract: 1RFU220 irfu110 IRFU121 irfu310 IRFU020 IRFU111 IRFU120 IRFU210 IRFU212
Text: - 266 - f ft A £ m € tt € Id Pd V Vd s Vg s or * /CH * /CH t Vdg K V IRFZ30 IRFZ32 1RFZ34 IR IR IR IR IR IR fR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR * + UPchiNc IRFU02O IRFUQ22 IRFUI10 IRFU111 IRFU120 IRFU121 ( RFU210
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IRFU020
T0-251AA
1RFU022
O-251AA
RFU310
1RFU32Ã
1RFU411
IRFU420
IRFU901Ã
IRFU9012
1rfz30
1RFU220
irfu110
IRFU121
irfu310
IRFU111
IRFU120
IRFU210
IRFU212
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1rfz44
Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
Text: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)
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IRFZ20
O-220
IRFZ22
IRFZ30
IRFZ32
5TO-220
IRL510
1rfz44
MFE9200
1rfz30
IRFZ12
1RFZ22
VN10LP
irfu9212
irfu9220
irfu9222
irfu9022
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1RFZ34
Abstract: STM TO-220 marking IRFZ34 IRFZ34 international
Text: International ioR Rectifier HEXFET Power MOSFET • • • • • 4Û5S452 0Q1577Ö STM « I N R PD-9.509B IRFZ34 bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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5S452
0Q1577Ö
IRFZ34
O-220
S5452
1RFZ34
STM TO-220 marking
IRFZ34
IRFZ34 international
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IRF34N
Abstract: 1RFZ34N 1RFZ34 dioda rectifier IRFZ34N V145M 100MS IRF1010 VIQR9246 dioda 12B
Text: PD-9.1278A • I If c W I 1 1 U V I V 1 i d l llORlRectifier PRELIMINARY _ IRFZ34 N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling V dss
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IRFZ34N
O-220
a9246
IRF34N
1RFZ34N
1RFZ34
dioda rectifier
V145M
100MS
IRF1010
VIQR9246
dioda 12B
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1RFZ46N
Abstract: 1RFZ34N 1rf5305 1RFZ34 1rfbf20l
Text: HEXFEl Power MOSFETs International IöR Rectifier *D >0 V BR DSS Port Number Droin-to-Source Breakdown Voltage (V) Continuous R R DS(on) Continuous PD Drain Current On-State Drain Current Max. Thermal Max. Power 100" Resistance Resistance Dissipation
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1RFZ34NL
1RFZ46NL
1RFBF20L
1RF5305L
O-262
O-220AB
O-220
1RFZ46N
1RFZ34N
1rf5305
1RFZ34
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1rfz24n
Abstract: 1RFZ34N 1RFBE30 IRF3205 IR 1rfz44 1RFZ44F 1RFZ24 IRF3205 1RFZ34 IR 37 0023
Text: HEXFEl Power MOSFETs International IQ R Rectifier Part Number v BR 0SS Drain-to-Source Breakdown VoNage (V) ^DS(on) On-State Resistance in •d ■d Continuous R PD Continuous Drain Current Max. Thermal Max. Power Drain Current 100e Resistance Dissipation
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1RFZ24N
1RFZ34N
IRF3205
1RFZ44F,
-220AB
9I47-7
904X2
IRF2807
IRF520N
IRF530N
1RFBE30
IRF3205 IR
1rfz44
1RFZ44F
1RFZ24
1RFZ34
IR 37 0023
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1RFZ34
Abstract: SMD IRFZ34 AN-994 IRFZ34 IRFZ34S SMD-220
Text: International ^¡Rectifier PD-9.509B IRFZ34 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V d s s ~ 60V ^DS(on = 0 - 0 5 0 0 ID = 30A Description DATA
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IRFZ34
O-22Q
O-220
1RFZ34
SMD IRFZ34
AN-994
IRFZ34S
SMD-220
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1RFZ34A
Abstract: IRFZ344 1RFZ34 IRFZ34A
Text: IRFZ34A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BV0SS = 60 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 1 7 5 t Operating Temperature Lower Leakage Current : 10 m A M ax. @
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IRFZ34A
1RFZ34A
1RFZ34A
IRFZ344
1RFZ34
IRFZ34A
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