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    R/1RL640A

    Abstract: No abstract text available
    Text: IRL640A A d van ced Power MOSFET FEATURES BV,DSS = 200 V • ■ ■ ■ ■ ■ ■ Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 uA Max. @ VOS= 200V


    OCR Scan     		PDF IRL640A O-220 1RL640A R/1RL640A

    1RL640

    Abstract: No abstract text available
    Text: N-CHANNEL LOGIC LEVEL MOSFET IRL640/IRL641 FEATURES • • • • • • • • Lower R d s ON Excellent voltage stability Fact switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRL640/IRL641 O-22Q 1RL640 IRL641