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    1S21E Price and Stock

    IDEC Corporation CW1S-21E21

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    IDEC Corporation CW1S-21E20

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    IDEC Corporation CW1S-21E30

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    IDEC Corporation CW1S-21E11

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    IDEC Corporation CW1S-21E01

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    Master Electronics CW1S-21E01
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    1S21E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3609

    Abstract: ic power 22E 12E MARKING power 22E power 22E IC power Ic 22e
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3609 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. + Q .2 2.9- a 3 FEATURES: • Low Noise Figure, High Gain. • N F=1.ldB, IS2 1 e |2=13dB f=lGHz +a25 MAXIMUM RATINGS 1 .5 0 — 0 .1 5 (Ta=25°C) h o CHARACTERISTIC


    OCR Scan     		PDF 2SC3609 1S21el2 500MHz 2SC3609 ic power 22E 12E MARKING power 22E power 22E IC power Ic 22e

    2SC3745

    Abstract: MARKING CL3
    Text: 2SC3745 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm UHF-C BAND LOW NOISE AMPL I F I E R APPLICATIONS. + 0.2 2.9- Q 3 FEATURES: • High Gain • Low Noise Figure NF=2.OdB Typ. • High fT fT=6.5GHz(Typ.) 4 ¿r LL |s2ie|2=12dB(Typ.) d o 0> -} 3 1 1 _.J_ 1


    OCR Scan     		PDF 2SC3745 10raA 10niA -J150 -J100 2SC3745 MARKING CL3

    CQ 817

    Abstract: cq 0765 TRANSISTOR cq 817 ic 4580 2SC4860
    Text: Ordering number: E N 4 5 8 0 2SC4860 No.4580 NPN E pitaxial P lan ar Silicon Transistor SA\YO UHF Converter, Local Oscillator Applications i F e a tu r e s • H igh cutoff frequency :fT = 6.5GHztyp. * H igh gain : I S21e l2= 11.5dB typ f= 1GHz . •Sm all Cob : N F = 0.65pF typ.


    OCR Scan     		PDF EN4580 2SC4860 CQ 817 cq 0765 TRANSISTOR cq 817 ic 4580

    HXTR-3101

    Abstract: No abstract text available
    Text: HEWLETT-PACKARDi CNPNTS SOE D B M447SÔ4 0005523 7 El w m h ewlett mi.E3 PA C K A R D T 'H -O Ì G eneral Purpose Transistors HXTR-3001 Chip Technical Data HXTR-3101, TX and TXV 2N6838 HXTR-3103, TX and TXV HSMX-3131 HSMX-3151 Features D escription • H ig h G ain


    OCR Scan     		PDF M447SÃ HXTR-3001 HXTR-3101, 2N6838 HXTR-3103, HSMX-3131 HSMX-3151 IS21E12 HXTR-3101 HXTR-3101

    transistor zo 607

    Abstract: 2SC5226 FC156 ZS22 sn 0426 FC 0137 transistor z 0607 ao41 ic 2429
    Text: Ordering number : EN 5432 FC156 No.5432 i NPN Epitaxial Planar Silicon Composite Transistor SMIYO i High-Frequency Low-Noise Amp, Differential Amp Applications F eatures • Composite type with 2 transistors contained in the CP package currently in use, improving the


    OCR Scan     		PDF FC156 2SC5226, 20with transistor zo 607 2SC5226 ZS22 sn 0426 FC 0137 transistor z 0607 ao41 ic 2429

    cq 0765

    Abstract: ic MARKING FZ 2SC4854 ZS12 ZS22 AX-9521
    Text: Ordering num ber: EN 4 5 7 9 _ 2SC4854 NPN Epitaxial Planar Silicon Transistor Low-Voltage, Low-Current High-Frequency Amp Applications F e a tu re s • Low-voltage, low-current operation : f j = 5GHz typ. VCE = IV, Ic = 1mA : I S21e I2= 7dB typ (f = 1GHz).


    OCR Scan     		PDF EN4579 2SC4854 cq 0765 ic MARKING FZ 2SC4854 ZS12 ZS22 AX-9521

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    transistor bf 458

    Abstract: Transistor B C 458 Q555 transistor 3247 NF NPN Silicon Power transistor TO-3
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UpA8 6T OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE: P A C K A G E OUTLINE S06 (Top View) 2 NE685 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH GAIN: IS21EI2 = 8.5 dB TYP at 2 GHz


    OCR Scan     		PDF NE685 IS21EI2 UPA806T 4e-12 18e-12 2e-12 UPA806T transistor bf 458 Transistor B C 458 Q555 transistor 3247 NF NPN Silicon Power transistor TO-3

    NPN planar RF transistor

    Abstract: No abstract text available
    Text: Tem ic BFP280T Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Jk For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features • Low power applications


    OCR Scan     		PDF BFP280T 1S21e 17-Apr-96 NPN planar RF transistor

    2SC1253

    Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733
    Text: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for


    OCR Scan     		PDF MS7414 NE74000 NE74014 NE74020 NE740 E90115 NE74014 2SC12579 2SC1253 E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733

    transistor CQ 735

    Abstract: 2SC4853 ZS21 4578a
    Text: Ordering number:EN 4578A SAMYO N0.4578A 2SC4853 NPN Epitaxial Planar Silicon Transistor Low-Voltage, Low-Current High-Frequency Amp Applications i F eatu res • Low-voltage, low-current operation : fr=5G H z typ. VCE = IV, Ic = 1mA : I S21e I2= 7dB typ (f = 1GHz).


    OCR Scan     		PDF 2SC4853 transistor CQ 735 2SC4853 ZS21 4578a

    CQ 523

    Abstract: cq 531 mc 5357 Z0 607 2SC5245 FC157 s22L transistor but 607 cq 765 NPN/CQ 523
    Text: O rd e rin g n u m b e r: EN5433 _ FC157 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications F eatu re s •Composite type with 2 transistors contained in the CP package currently in use, improving the


    OCR Scan     		PDF EN5433 FC157 FC157 2SC5245, CQ 523 cq 531 mc 5357 Z0 607 2SC5245 s22L transistor but 607 cq 765 NPN/CQ 523

    HXTR-3101

    Abstract: HXTR-3121 SAJ 210 equivalent HXTR-3185 HXTR3101 HXTR-3101TX HXTR3121 2N6838 saj 141 HSMX-3131
    Text: HEWLETT-PACKARD-. CMPNTS EOE D B M4M7SA4 0005553 7 E9 T/llft HEWLETT m L /ia P A C K A R D r - i h o i G en eral P u rp o se T ran sistors HXTR-3001 C hip Technical D ata HXTR-3101, TX and TXV 2N6838 HXTR-3103, TX and TXV HSMX-3131 HSMX-3151 F eatu res D escrip tion


    OCR Scan     		PDF HXTR-3001 HXTR-3101, 2N6838 HXTR-3103, HSMX-3131 HSMX-3151 IS21EIa HXTR-3103 1S21E12 MIL-S-19500, HXTR-3101 HXTR-3121 SAJ 210 equivalent HXTR-3185 HXTR3101 HXTR-3101TX HXTR3121 2N6838 saj 141

    F527S

    Abstract: 2sc55 marking WMM 2SC5488 2SC4853 2SC4931 2SC5277 2SC5374 2SC5489 2SC553
    Text: SAfiYO NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES lt>2 Newly developed SANYO very high-frequency tra n sis to rs can be used fo r various ap p licatio n s such as fo r communication equipment and measuring equipment. They are superior when used with low voltage drive.


    OCR Scan     		PDF Cas-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> F527S 2sc55 marking WMM 2SC5488 2SC4853 2SC4931 2SC5277 2SC5374 2SC5489 2SC553

    1521e

    Abstract: C4931 2SA1763 2SC4867 2SC4918 c493 2SA1883 2SC4400 2SC4452 2SC4931
    Text: SAfiYO S M C P S u p e r Mini C h i p P a c k T r a n s i s t o r s e r i e s The newly developed Sanyo SMCP package can make the sets more compact and slimmer because of a super mini package. We have various products for such applications as shown below. In addition, we can provide you with reel-style packing


    OCR Scan     		PDF 2SA1965 2SC4919 2SC4851 MT990324TR D024bl2 1521e C4931 2SA1763 2SC4867 2SC4918 c493 2SA1883 2SC4400 2SC4452 2SC4931

    fr 0204

    Abstract: 2SC5347 ZS21 ZS22 TA-0689
    Text: O rdering num ber: EN 5512A 2SC5347 N0.5512A NPN Epitaxial Planar Silicon Transistor SAMYO i High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications F eatu res • High frequency medium output amplification: fr=4.7GHz typ f= 1GHz .


    OCR Scan     		PDF 2SC5347 250mm2 IS11I IS22I fr 0204 2SC5347 ZS21 ZS22 TA-0689

    2SC1253

    Abstract: 2SC1251 NEC k 2134 transistor NE74000 NE74014 NE74020 NE90115 CTO-39 2143E 1321E12
    Text: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D 7 z ll- â S ' NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR DESCRIPTION AND APPLICATIONS FEATURES The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent in­


    OCR Scan     		PDF MS7414 NE74000 NE74014 NE74020 NE740 2SC1253 2SC1251 NEC k 2134 transistor NE74020 NE90115 CTO-39 2143E 1321E12

    5541a

    Abstract: 2SC537 Transistor 4733 TA-0824 EN5541 2SC5375 IC 7484
    Text: Ordering number: EN5541À 2SC5375 NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, High-Frequency Amp Applications F eatu re s •High gain : I S21e I 2= lOdB typ f= 1GHz . • High cutoff frequency : fr = 5.2GHz typ. A bsolute M axim um E atin g s at Ta = 25°C


    OCR Scan     		PDF EN5541Ã 2SC5375 10VfIE 5541a 2SC537 Transistor 4733 TA-0824 EN5541 2SC5375 IC 7484

    2SC2407

    Abstract: nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592
    Text: N E C/ 1SE CALIFORNIA L4H7414 D 0001310 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES NE416 SERIES DESCRIPTION AND APPLICATIONS The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The series provides economical solutions to a wide range of ampli­


    OCR Scan     		PDF L4H7414 NE416 T-33-Ã 2SC2407 nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592

    transistor d 13009

    Abstract: IC 566 vco transistor j 13009 IC 8085 pin
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package Outline TS06 Q 1:N F= 1.2 dB TYP a tf = 1 GHz, VCE = 3 V, Ic = 7 mA 2.1 ±0.1 j'•*— 1.25 ± 0.1 -*■


    OCR Scan     		PDF UPA832TF 1S21EI2 NE856, NE685) UPA832TF NE85630 NE68530 UPA835TF UPA832TF-T1 transistor d 13009 IC 566 vco transistor j 13009 IC 8085 pin

    telephone IC panasonic

    Abstract: No abstract text available
    Text: Panasonic Transistor 2SC5473 Tentative Silicon NPN epitaxial planer type For low -voltage low -noise high-frequency oscillation • U nit: mm Features • High transition frequency fT. • High gain of 8.9dB and low noise of 1.8dB at 3V. • Optimum for RF am plification of a portable telephone and


    OCR Scan     		PDF 2SC5473 1S21e telephone IC panasonic

    2SC2407 equivalent

    Abstract: 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600
    Text: N E C/ 1SE CALIFORNIA L4H7414 D 0001.310 L> T -3 H T T NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE: 1 dB at 70 MHz The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The


    OCR Scan     		PDF L4H7414 NE416 for23 2SC2407 equivalent 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600

    marking 83

    Abstract: BFP183T
    Text: Temic BFP183T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features


    OCR Scan     		PDF BFP183T 17-Apr-96 marking 83 BFP183T

    marking RH

    Abstract: No abstract text available
    Text: Tem ic BFR183T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor £ Electrostatic sensitive device. Observe precautions for handling. M Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 inA. Features


    OCR Scan     		PDF BFR183T 1S21e 17-Apr-96 marking RH