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    1SMB2EZ12 Search Results

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    1SMB2EZ12 Price and Stock

    PanJit Group 1SMB2EZ12_R1_00001

    DIODE ZENER 12V 2W DO214AA
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    DigiKey 1SMB2EZ12_R1_00001 Cut Tape 361 1
    • 1 $0.43
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    1SMB2EZ12_R1_00001 Digi-Reel 361 1
    • 1 $0.43
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    1SMB2EZ12_R1_00001 Reel 800
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    PanJit Semiconductor 1SMB2EZ12_R1_00001

    Zener Diodes 2000mW,ZENER,SMB,12V
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    Mouser Electronics 1SMB2EZ12_R1_00001 792
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    NAC 1SMB2EZ12_R1_00001 Reel 800
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    PanJit Semiconductor 1SMB2EZ12_R2_00001

    Zener Diodes 2000mW ZENER 12V
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    Mouser Electronics 1SMB2EZ12_R2_00001
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    NAC 1SMB2EZ12_R2_00001 3,000
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    Avnet Silica 1SMB2EZ12_R2_00001 18 Weeks 3,000
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    PanJit Semiconductor 1SMB2EZ12-R1-00001

    Zener Diodes ZENER DO-214 2W 12V
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    TTI 1SMB2EZ12-R1-00001 Reel 800
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    PanJit Semiconductor 1SMB2EZ12_R1

    DUAL SURFACE MOUNT ZENER DIODES - 13IN. REEL. Package Type: SOT-23
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    NAC 1SMB2EZ12_R1 Reel 3,000
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    1SMB2EZ12 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SMB2EZ12 PanJit Semiconductors SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) Original PDF
    1SMB2EZ12 Transys Electronics SURFACE MOUNT SILICON ZENER DIODE Scan PDF
    1SMB2EZ120 PanJit Semiconductors SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) Original PDF
    1SMB2EZ120 Transys Electronics SURFACE MOUNT SILICON ZENER DIODE Scan PDF

    1SMB2EZ12 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 1SMB2EZ11~1SMB2EZ39 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES 2.0 Watts VOLTAGE POWER 11 to 39 Volts SMB/DO-214AA Unit: inch mm FEATURES • Low profile package .155(3.94) .130(3.30) • Built-in strain relief • Glass passivated iunction


    Original     		1SMB2EZ11 1SMB2EZ39 SMB/DO-214AA DO-214AA, PDF

    1SMB2EZ11

    Abstract: 1SMB2EZ12 1SMB2EZ13 1SMB2EZ14 1SMB2EZ15 1SMB2EZ200
    Text: 1SMB2EZ11 THRU 1SMB2EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts FEATURES l Low profile package l Built-in strain relief l l Glass passivated junction Low inductance l l Excellent clamping capability Typical ID less than 1 £gA above 11V


    Original     		1SMB2EZ11 1SMB2EZ200 DO-214AA DO-214AA, MIL-STD-750, EIA-481) 1SMB2EZ12 1SMB2EZ13 1SMB2EZ14 1SMB2EZ15 1SMB2EZ200 PDF

    EZ120

    Abstract: EZ140 EZ110 1SMB2EZ33 w100 zener 1SMB2EZ11 1SMB2EZ12 1SMB2EZ13 1SMB2EZ14 1SMB2EZ200
    Text: TRANSYS ELECTRONICS LIMITED 1SMB2EZ11 THRU 1SMB2EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 2.0 W atts FEATURES DO-214AA Low prof e package Built-in strain re ef Glass passivated junction ,ü77fl-gC .« s a illi Low inductance


    OCR Scan     		1SMB2EZ11 1SMB2EZ200 0J/10 DO-214AA, MIL-STD-750, EIA-481) EZ120 EZ140 EZ110 1SMB2EZ33 w100 zener 1SMB2EZ12 1SMB2EZ13 1SMB2EZ14 1SMB2EZ200 PDF

    TSP160C

    Abstract: ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C
    Text: TABLE OF CONTENT THYRISTOR SURGE PROTECTION DEVICE • 50Amp 10/1000 µs Thyristor Surge Protection Device . Page 02 • 80Amp 10/1000 µs Thyristor Surge Protection Device . Page 04


    Original     		50Amp 80Amp 100Amp 375x360x390/390x240x420 375x360x390 O-252 TSP160C ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C PDF

    Thermal Resistance to ambient SMB Case

    Abstract: zener diode 47-10 1SMB2EZ10 1SMB2EZ100 1SMB2EZ11 1SMB2EZ12 1SMB2EZ13 diode SMB case
    Text: 1SMB2EZ6.8~1SMB2EZ100 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 100 Volts POWER 2.0 Watts SMB/DO-214AA Unit: inch mm FEATURES • Low profile package .155(3.94) .130(3.30) • Built-in strain relief • Plastic package has Underwriters Laboratory Flammability


    Original     		1SMB2EZ100 SMB/DO-214AA DO-214AA, MIL-STD-750, Thermal Resistance to ambient SMB Case zener diode 47-10 1SMB2EZ10 1SMB2EZ100 1SMB2EZ11 1SMB2EZ12 1SMB2EZ13 diode SMB case PDF

    1SMB2EZ13

    Abstract: 1SMB2EZ51 1SMB2EZ10 1SMB2EZ11 1SMB2EZ12 E1A-481
    Text: 1SMB2EZ6.8~1SMB2EZ51 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 2.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V


    Original     		1SMB2EZ51 2002/95/EC DO-214AA, MIL-STD-750, E1A-481) 1SMB2EZ13 1SMB2EZ51 1SMB2EZ10 1SMB2EZ11 1SMB2EZ12 E1A-481 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SMB2EZ6.8~1SMB2EZ51 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 2.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V


    Original     		1SMB2EZ51 DO-214AA, MIL-STD-750, E1A-481) PDF