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    1SS3 Search Results

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    ROHM Semiconductor 1SS355TE-17

    DIODE GEN PURP 80V 100MA UMD2
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    DigiKey 1SS355TE-17 Cut Tape 209,150 1
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    1SS355TE-17 Digi-Reel 209,150 1
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    1SS355TE-17 Reel 207,000 3,000
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    Bristol Electronics 1SS355TE-17 192,693 9
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    1SS355TE-17 2,660 34
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    1SS355TE-17 2,435 34
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    Avnet Asia 1SS355TE-17 24 Weeks 3,000
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    Avnet Silica 1SS355TE-17 15 Weeks 3,000
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    Component Electronics, Inc 1SS355TE-17 14,433
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    CoreStaff Co Ltd 1SS355TE-17 366,425
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    New Advantage Corporation 1SS355TE-17 54,000 1
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    Win Source Electronics 1SS355TE-17 6,000
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    Toshiba America Electronic Components 1SS321,LF

    DIODE SCHOTTKY 10V 50MA S-MINI
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    DigiKey 1SS321,LF Cut Tape 40,271 1
    • 1 $0.2
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    1SS321,LF Digi-Reel 40,271 1
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    1SS321,LF Reel 36,000 3,000
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    Toshiba America Electronic Components 1SS389,L3F

    DIODE SCHOTTKY 10V 100MA ESC
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    DigiKey 1SS389,L3F Cut Tape 37,590 1
    • 1 $0.14
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    1SS389,L3F Digi-Reel 37,590 1
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    1SS389,L3F Reel 32,000 8,000
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    Avnet Americas 1SS389,L3F Reel 8,000 16 Weeks 8,000
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    Verical 1SS389,L3F 917 293
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    Arrow Electronics 1SS389,L3F Cut Strips 917 16 Weeks 1
    • 1 $0.1306
    • 10 $0.0873
    • 100 $0.0402
    • 1000 $0.0239
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    Taiwan Semiconductor 1SS355-RRG

    DIODE GEN PURP 80V 150MA SOD323F
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    DigiKey 1SS355-RRG Cut Tape 19,996 1
    • 1 $0.12
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    1SS355-RRG Digi-Reel 19,996 1
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    1SS355-RRG Reel 18,000 3,000
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    Comchip Technology Corporation Ltd 1SS355-HF

    DIODE SWITCHING 90V 150MA 200MW
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    DigiKey 1SS355-HF Digi-Reel 4,768 1
    • 1 $0.2
    • 10 $0.129
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    • 1000 $0.04048
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    1SS355-HF Cut Tape 4,768 1
    • 1 $0.2
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    • 1000 $0.04048
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    1SS355-HF Reel 3,000 3,000
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    NAC 1SS355-HF 3,000
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    1SS3 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS30 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS30 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS300 Kexin Ultra High Speed Switching Application Original PDF
    1SS300 Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-2P1A) Original PDF
    1SS300 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS300 Toshiba Switching Diodes; Surface Mount Type: Y; Package: USM; XJE016 JEITA: SC-70; Number of Pins: 3; Features: high-speed switching; Internal connection: 2 in 1; Comments: Please ask for the nearest Toshiba distributor about the production works.; Reverse Voltage, max (V): (max 80) Original PDF
    1SS300 TY Semiconductor Ultra High Speed Switching Application - SOT-323 Original PDF
    1SS300 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS300 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS300 Toshiba DIODE (ULTRA HIGH SPEED SWTHCING PPLICATION) Scan PDF
    1SS300 Toshiba DIODE Scan PDF
    1SS300,LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CA 3 USM Original PDF
    1SS300TE85L Toshiba 1SS300 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS300TE85L Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-2P1A) T/R Original PDF
    1SS300TE85R Toshiba 1SS300 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS301 Kexin Ultra High Speed Switching Application Original PDF
    1SS301 Toshiba Japanese - Diodes Original PDF
    1SS301 Toshiba Silicon diode for ultra high speed switching applications Original PDF
    1SS301 TY Semiconductor Ultra High Speed Switching Application - SOT-323 Original PDF
    1SS301 Xin Semiconductor SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY Original PDF
    ...

    1SS3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Diode marking TY

    Abstract: IR switch smd diode marking um marking ty TY SMD diode 1SS314
    Text: Diodes SMD Type VHF TUNER BAND SWITCH APPLICATIONS 1SS314 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Features Unit: mm +0.1 1.3-0.1 Small packag Small Total capacitance: CT = 1.2pF Max. Low series resistance: rs = 0.5 +0.1 2.6-0.1 1.0max (Typ.) 0.375


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    1SS314 OD-323 Diode marking TY IR switch smd diode marking um marking ty TY SMD diode 1SS314 PDF

    1SS393

    Abstract: No abstract text available
    Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS393 Features Low forward voltage:VF 3 = 0.54 V(Typ.) Low reverse current:IR = 5 A A bsolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage S ym bol R ating U nit V RM 45 V R everse voltage


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    1SS393 1SS393 PDF

    1SS379

    Abstract: 0-110A
    Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SS379 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Small total capacitance: CT=3.0pF Typ. 1 0.55 Low reverse current: IR=0.1nA(Typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 Low forward voltage :VF=1.0V(Typ.)


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    1SS379 OT-23 100mA 1SS379 0-110A PDF

    smd diode a6

    Abstract: smd diode marking a6 DIODE A6 marking A6 A CLIPPER CIRCUIT APPLICATIONS 1SS304 smd transistor A6 A6 DIODE SMD a6 Transistor
    Text: Diodes SMD Type HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS304 Features Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use.


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    1SS304 smd diode a6 smd diode marking a6 DIODE A6 marking A6 A CLIPPER CIRCUIT APPLICATIONS 1SS304 smd transistor A6 A6 DIODE SMD a6 Transistor PDF

    Marking s3

    Abstract: smd transistor s3 1SS388
    Text: Diodes SMD Type HIGH SPEED SWITCHING APPLICATION 1SS388 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Small Package + +0.1 0.6-0.1 - Low Forward Voltage :VF 3 = 0.54V(TYP.) Low Reverse Current :IR = 5 Ìa(TYP.) +0.1 1.6-0.1 +0.05 0.1-0.02


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    1SS388 OD-523 07max 77max Marking s3 smd transistor s3 1SS388 PDF

    Untitled

    Abstract: No abstract text available
    Text: Diodes High–voltage band switching diode 1SS376 FApplications High voltage switching FExternal dimensions Units: mm FFeatures 1)ăHigh reliability. 2)ăSmall surface mounting type. (UMD2) 3)ăPeak reverse voltage guaranteed at 300V with this size. FConstruction


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    1SS376 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS362FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362FV Ultra-High-Speed Switching Applications Unit: mm z Small package 0.22±0.05 z Fast reverse recovery time: trr = 1.6 ns typ. Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current


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    1SS362FV 05mitation, PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS361FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361FV Ultra-High-Speed Switching Applications 0.22±0.05 Unit: mm Maximum peak reverse voltage Symbol Rating Unit VRM 85 V 2 3 0.13±0.05 Characteristic 1 0.5±0.05 Absolute Maximum Ratings (Ta = 25°C)


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    1SS361FV PDF

    1SS32

    Abstract: No abstract text available
    Text: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC−70 Absolute Maximum Ratings (Ta = 25°C) Characteristic


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    1SS322 SC-70 1SS32 PDF

    smd diode UM

    Abstract: smd diode marking um 1SS352 marking Um diode smd diode UM 85 smd diode UM 16
    Text: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION DIODE 1SS352 SOD-323 +0.1 1.3-0.1 Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Small Package Low forward voltage :VF 3 = 0.98 (Typ) :trr = 1.6ns (Typ) Small total capacitance :CT = 0.5 pF(Typ)


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    1SS352 OD-323 smd diode UM smd diode marking um 1SS352 marking Um diode smd diode UM 85 smd diode UM 16 PDF

    k9 diode

    Abstract: smd transistor marking 26 1SS348
    Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS348 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage: VF 3 = 0.56V(Typ). 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1


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    1SS348 OT-23 k9 diode smd transistor marking 26 1SS348 PDF

    Diodes smd marking f5 reverse voltage

    Abstract: MA1060 marking f5 SOT-23 F5 Diodes smd f5 1ss370 smd marking f5 1SS370
    Text: Diodes SMD Type Silicon Epitaxial Planar Type 1SS370 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 :VF 3 = 0.9 V(Typ) :trr = 60ns (MAX.) :CT = 1.5 pF(Typ) 1 0.55 Small total capacitance +0.1 1.3-0.1 Fast reverse recovery time +0.1 2.4-0.1 Low forward voltage


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    1SS370 OT-23 Diodes smd marking f5 reverse voltage MA1060 marking f5 SOT-23 F5 Diodes smd f5 1ss370 smd marking f5 1SS370 PDF

    1SS377

    Abstract: marking O9
    Text: Diodes SMD Type HIGH SPEED SWITCHING DOIDE 1SS377 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VR =0.23V Typ . @IF = 5mA 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


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    1SS377 OT-23 Te200* 1SS377 marking O9 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature


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    1SS315 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS384 TO SHIBA DIODE 1 SS384 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 j 1.25± O.lj • Small Package • Composed of 2 independent diodes. • Low Forward Voltage : Vp 2 = 0.23V (TYP.) o o


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    1SS384 SS384 PDF

    SS302

    Abstract: No abstract text available
    Text: 1SS302 TO SHIBA TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS302 Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 2.1 ± 0.1 : SC-70 : Vp 3 = 0.90V (Typ.)


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    1SS302 SS302 SC-70 SS302 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5-0.3 • Low Forward Voltage : V p 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I o = 0.5A (Max.)


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    1SS344 961001EAA2' PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS336 T O SH IB A 1SS336 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0 .5 2 .5 - 0 . 3 : SC-59 : Vp 3 = 0.84V (Typ.) : trr = 7ns (Typ.) : Or = 7pF (Typ.) + 0 .2 5 1 .5 - 0 . 1 5 , 0 .9 5 Small Package


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    1SS336 SC-59 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS388 TO SHIBA TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION • • • SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS388 Small Package Low Forward Voltage Low Reverse Current Unit in mm : VF 3 = 0.54V (Typ.) : Ir = 5//A (Typ.) M A X IM U M RATINGS (Ta = 25°C)


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    1SS388 PDF

    1SS321

    Abstract: No abstract text available
    Text: 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. Low Forward Voltage Unit in mm VF=0.42V Typ. Low Reverse Current lR=500nA(Max.) Small Package SOT-23MOD MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Maximum(Peak Reverse Voltage


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    1SS321 500nA OT-23MOD 1SS321 PDF

    1SS300

    Abstract: No abstract text available
    Text: 1SS300 SILICON EPITAXIAL PLANAR T Y P E ULTRA HIGH SPEED SWITCHING APPLICATION. Small Package Unit in mm 21 ±0.1 SC-70 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 1.25 ± 0.1 VF=0.92V Typ. t r r = l . 6ns(T yp.) Ct = 2 . 2 p F ( T y p . )


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    1SS300 SC-70 100mA 1SS300 PDF

    1SS348

    Abstract: CT marking
    Text: 1SS348 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING Unit in mra . Low Forward Voltage : V f =0.56V Typ. . Low Reverse Current : lR=5/JA(Max.) . Small Package MAXIMUM RATINGS : SC-59 (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT


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    1SS348 SC-59 100mA 1SS348 CT marking PDF

    "UHF DETECTOR"

    Abstract: No abstract text available
    Text: Ordering number:EN4690 _ 1SS375 No.4690 Schottky B arrier Diode SANYO i VHF, UHF detector and Mixer Applications F e a tu re s •Series connection of 2 elem ents in a very sm all-sized package facilitates high-density m ounting and perm its lSS375-applied equipm ent to be made sm aller.


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    EN4690 1SS375 lSS375-applied "UHF DETECTOR" PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS368 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS368 ULTRA HIGH SPEED SWITCHING APPLICATION • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Vf 3 - 0.98V (TYP.) trr= 1.6ns (TYP.) CT = 0.5pF (TYP.)


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    1SS368 PDF