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    1SS32 Price and Stock

    Toshiba America Electronic Components 1SS321,LF

    DIODE SCHOTTKY 10V 50MA S-MINI
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    DigiKey 1SS321,LF Digi-Reel 40,151 1
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    1SS321,LF Cut Tape 40,151 1
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    1SS321,LF Reel 36,000 3,000
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    Avnet Americas 1SS321,LF Reel 16 Weeks 3,000
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    Mouser Electronics 1SS321,LF 7,702
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    TTI 1SS321,LF Reel 3,000
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    Toshiba America Electronic Components 1SS322(TE85L,F)

    DIODE SCHOTTKY 40V 100MA USM
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    DigiKey 1SS322(TE85L,F) Digi-Reel 5,941 1
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    1SS322(TE85L,F) Cut Tape 5,941 1
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    1SS322(TE85L,F) Reel 3,000 3,000
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    Mouser Electronics 1SS322(TE85L,F) 11,233
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    Verical 1SS322(TE85L,F) 3,572 410
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    1SS322(TE85L,F) 1,705 309
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    Quest Components 1SS322(TE85L,F) 2,707
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    1SS322(TE85L,F) 2,707
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    1SS322(TE85L,F) 1,364
    • 1 $0.655
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    1SS322(TE85L,F) 1,364
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    TTI 1SS322(TE85L,F) Reel 3,000
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    Chip One Stop 1SS322(TE85L,F) Cut Tape 3,572
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    EBV Elektronik 1SS322(TE85L,F) 25 Weeks 3,000
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    TT electronics / BI Technologies P271-SS32BR50K

    PANEL POTENTIOMETER
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    DigiKey P271-SS32BR50K Tray 630
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    Sager P271-SS32BR50K 210
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    TT electronics / BI Technologies P271-SS32BR200112

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    DigiKey P271-SS32BR200112 Tray 630
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    Sager P271-SS32BR200112 210
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    TT electronics / BI Technologies P271-SS32AR500K292

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    DigiKey P271-SS32AR500K292 Tray 630
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    Sager P271-SS32AR500K292 210
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    Find more 1SS32 price and stock on Findchips.com

    1SS32 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS321 Kexin Low Voltage High Speed Switching Original PDF
    1SS321 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS321 TY Semiconductor Low Voltage High Speed Switching - SOT-23 Original PDF
    1SS321 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS321 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS321 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan PDF
    1SS321 Toshiba DIODE Scan PDF
    1SS321,LF Toshiba America Electronic Components SMALL SIGNAL SCHOTTKY BARRIER DI Original PDF
    1SS321TE85L Toshiba 1SS321 - DIODE 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS321TE85L2 Toshiba 1SS321 - DIODE 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS321TE85LF Toshiba 1SS321TE85LF - Diode Small Signal Schottky 12V 0.05A 3-Pin S-Mini T/R Original PDF
    1SS321TE85R Toshiba 1SS321 - DIODE 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS321TE85R2 Toshiba 1SS321 - DIODE 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS322 Kexin Low Voltage High Speed Switching Original PDF
    1SS322 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS322 Toshiba Japanese - Diodes Original PDF
    1SS322 TY Semiconductor Low Voltage High Speed Switching - SOT-323 Original PDF
    1SS322 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS322 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS322 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan PDF

    1SS32 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1SS32

    Abstract: No abstract text available
    Text: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC−70 Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		1SS322 SC-70 1SS32 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC−70 Maximum Ratings (Ta = 25°C) Characteristic


    Original     		1SS322 100mA PDF

    1SS321

    Abstract: No abstract text available
    Text: 1SS321 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS321 ○ 低電圧高速スイッチング用 単位: mm : SC-59 : VF 2 = 0.42V (標準) : IR = 500nA (最大) z 外形が小さい。 z 順電圧が小さい。


    Original     		1SS321 SC-59 500nA 236MOD 1SS321 PDF

    1SS321

    Abstract: No abstract text available
    Text: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low-Voltage High-Speed Switching z Low forward voltage: VF = 0.42 V typ. z Low reverse current: IR = 500 nA (max) z Small package: SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		1SS321 SC-59 O-236MOD 1SS321 PDF

    diode MARKING A9

    Abstract: transistor marking A9 smd diode a9 smd transistor a9 smd A9 marking a9 smd diode UM A9 transistor SMD g125t SMD MARKING
    Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS322 Features Low forward voltage:VF 3 = 0.54 V(Typ) Low reverse current:trr = 5 A (Typ) A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol R a tin g U n it V RM 45 V R e v e rs e v o lta g e


    Original     		1SS322 diode MARKING A9 transistor marking A9 smd diode a9 smd transistor a9 smd A9 marking a9 smd diode UM A9 transistor SMD g125t SMD MARKING PDF

    1SS322

    Abstract: No abstract text available
    Text: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC−70 Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		1SS322 SC-70 1SS322 PDF

    1SS321

    Abstract: No abstract text available
    Text: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF = 0.42V typ. z Low reverse current : IR = 500nA (max) z Small package : SC-59 (SOT-23MOD) Absolute Maximum Ratings (Ta = 25°C)


    Original     		1SS321 500nA SC-59 OT-23MOD) OT-23MOD 1SS321 PDF

    1SS321

    Abstract: No abstract text available
    Text: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF = 0.42V typ. l Low reverse current : IR = 500nA (max) l Small package : SC-59 (SOT-23MOD) Maximum Ratings (Ta = 25°C) Characteristic


    Original     		1SS321 500nA SC-59 OT-23MOD) 1SS321 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF = 0.42V typ. l Low reverse current : IR = 500nA (max) l Small package : SC-59 (SOT-23MOD) Maximum Ratings (Ta = 25°C) Characteristic


    Original     		1SS321 500nA SC-59 OT-23MOD) 23MOD PDF

    f1 smd marking

    Abstract: 1SS321 smd marking sc sot-23 sot 1301 F9 SOT23
    Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS321 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 VF = 0.42 V Typ Low reverse current: IR =500 nA(Max) 1 0.55 Low forward voltage: +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05


    Original     		1SS321 OT-23 SC-59 OT-23MOD) f1 smd marking 1SS321 smd marking sc sot-23 sot 1301 F9 SOT23 PDF

    1SS321

    Abstract: No abstract text available
    Text: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF = 0.42V typ. Low reverse current : IR = 500nA (max) Small package : SC-59 (SOT-23MOD) Maximum Ratings (Ta = 25°C) Characteristic


    Original     		1SS321 500nA SC-59 OT-23MOD) OT-23MOD 961001EAA2' 1SS321 PDF

    1SS322

    Abstract: No abstract text available
    Text: 1SS322 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS322 ○ 低電圧高速スイッチング用 単位: mm : SC-70 : VF 3 = 0.54V (標準) : IR = 5 A (最大) z 外形が小さい。 z 順電圧が小さい。 z 逆電流が小さい。


    Original     		1SS322 SC-70 100mA 1SS322 PDF

    1SS321

    Abstract: No abstract text available
    Text: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF = 0.42V typ. Low reverse current : IR = 500nA (max) Small package : SC-59 (SOT-23MOD) Maximum Ratings (Ta = 25°C) Characteristic


    Original     		1SS321 500nA SC-59 OT-23MOD) 1SS321 PDF

    1SS322

    Abstract: No abstract text available
    Text: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC−70 Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		1SS322 SC-70 1SS322 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS321 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 VF = 0.42 V Typ Low reverse current: IR =500 nA(Max) 1 0.55 Low forward voltage: +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1


    Original     		1SS321 OT-23 SC-59 OT-23MOD) PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS322 Features Low forward voltage:VF 3 = 0.54 V(Typ) Low reverse current:trr = 5 A (Typ) A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol R a tin g U n it V RM 45 V R e v e rs e v o lta g e VR 40 V M a xim u m (p e a k ) fo rw a rd c u rre n t


    Original     		1SS322 PDF

    MARKING toshiba

    Abstract: 1SS322 TOSHIBA DIODE
    Text: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC−70 Maximum Ratings (Ta = 25°C) Characteristic Symbol


    Original     		1SS322 SC-70 MARKING toshiba 1SS322 TOSHIBA DIODE PDF

    1SS321

    Abstract: No abstract text available
    Text: 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. Low Forward Voltage Unit in mm VF=0.42V Typ. Low Reverse Current lR=500nA(Max.) Small Package SOT-23MOD MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Maximum(Peak Reverse Voltage


    OCR Scan     		1SS321 500nA OT-23MOD 1SS321 PDF

    S3 DIODE schottky

    Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
    Text: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching


    OCR Scan     		1SS300 1SS301 1SS302 1SS322 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU S3 DIODE schottky S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS322 TO SHIBA TO SHIBA DIODE 1 SS322 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-70 • • • 1.25 ± 0.1


    OCR Scan     		1SS322 SS322 SC-70 PDF

    diode ltn

    Abstract: No abstract text available
    Text: TOSHIBA 1SS321 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE <; <; 1 WÊÊF • 9ÊÊF 3 1 1 W ÊT ■ Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING. -i 0.5 2.5 -0.3 + 0-25 Low Forward Voltage : 0.42V Typ. Low Reverse Current : lR = 500nA (Max.) Small Package


    OCR Scan     		1SS321 500nA OT-23MOD) 961001EAA2' diode ltn PDF

    1SS321

    Abstract: No abstract text available
    Text: TOSHIBA 1SS321 TO SHIBA DIODE 1 SS321 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Low Forward Voltage : Vp = 0.42V Typ. Low Reverse Current • ÏR = 500nA (Max.) : SC-59 (SOT-23MOD) Small Package M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		1SS321 500iiA SC-59 OT-23MOD) 961001EAA2' 1SS321 PDF

    1SS322

    Abstract: No abstract text available
    Text: 1SS322 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. Unit in mm 2.1 ± 0.1 . Low Forward Voltage : V f ~ 0 •54V Typ. . Low Reverse Current : lR=5/iA(Max.) . Small Package : SC-70 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL


    OCR Scan     		1SS322 SC-70 100mA 11BVKRSE 1SS322 PDF

    SS321

    Abstract: No abstract text available
    Text: 1SS321 T O SH IB A TO SHIBA DIODE 1 SS321 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Unit in mm Low Forward Voltage : Vp = 0.42V Typ. Low Reverse Current : lR = 500nA (Max.) Small Package : SC-59 (SOT-23MOD) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		1SS321 SS321 500nA SC-59 OT-23MOD) T0-236M0D SC-59 SS321 PDF