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    1SS413 Price and Stock

    Toshiba America Electronic Components 1SS413,L3M

    DIODE SCHOTTKY 20V 50MA FSC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS413,L3M Digi-Reel 79,470 1
    • 1 $0.2
    • 10 $0.125
    • 100 $0.2
    • 1000 $0.04598
    • 10000 $0.03954
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    1SS413,L3M Cut Tape 79,470 1
    • 1 $0.2
    • 10 $0.125
    • 100 $0.2
    • 1000 $0.04598
    • 10000 $0.03954
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    1SS413,L3M Reel 60,000 10,000
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    • 10000 $0.03333
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    Mouser Electronics 1SS413,L3M 24,071
    • 1 $0.2
    • 10 $0.125
    • 100 $0.052
    • 1000 $0.042
    • 10000 $0.033
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    Toshiba America Electronic Components 1SS413CT,L3F

    DIODE SCHOTTKY 20V 50MA SOD882
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS413CT,L3F Cut Tape 38,680 1
    • 1 $0.16
    • 10 $0.109
    • 100 $0.16
    • 1000 $0.0492
    • 10000 $0.04165
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    1SS413CT,L3F Digi-Reel 38,680 1
    • 1 $0.16
    • 10 $0.109
    • 100 $0.16
    • 1000 $0.0492
    • 10000 $0.04165
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    1SS413CT,L3F Reel 30,000 10,000
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    • 10000 $0.03535
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    Avnet Americas 1SS413CT,L3F Reel 12 Weeks 10,000
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    • 10000 $0.03366
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    Mouser Electronics 1SS413CT,L3F 48,353
    • 1 $0.16
    • 10 $0.109
    • 100 $0.056
    • 1000 $0.045
    • 10000 $0.035
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    Toshiba America Electronic Components 1SS413L3M

    SCHOTTKY BARRIER DIODE HIGH-SPEED SWITCHING / LOW LEAKAGE CURRENT FSC (SOD-923) IO: 0.05A, VR: 20V - Tape and Reel (Alt: 1SS413,L3M)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 1SS413L3M Reel 12 Weeks 10,000
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    • 10000 $0.0306
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    Toshiba America Electronic Components 1SS413,L3M(T

    Schottky Diode, 25V, 0.05A, Sod-923 Rohs Compliant: Yes |Toshiba 1SS413,L3M(T
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark 1SS413,L3M(T Cut Tape 39,795 5
    • 1 $0.215
    • 10 $0.166
    • 100 $0.07
    • 1000 $0.042
    • 10000 $0.042
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    Chip One Stop 1SS413,L3M(T Cut Tape 8,230
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    • 100 $0.0499
    • 1000 $0.0403
    • 10000 $0.0382
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    1SS413,L3M(T Cut Tape 5,070
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    • 100 $0.0499
    • 1000 $0.0403
    • 10000 $0.0382
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    EBV Elektronik 1SS413,L3M(T 15 Weeks 10,000
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    Toshiba America Electronic Components 1SS413CT,L3F(T

    Schottky Diode, 25V, 0.05A, Sod-882 Rohs Compliant: Yes |Toshiba 1SS413CT, L3F(T
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark 1SS413CT,L3F(T Cut Tape 5
    • 1 $0.233
    • 10 $0.18
    • 100 $0.075
    • 1000 $0.045
    • 10000 $0.045
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    Chip One Stop 1SS413CT,L3F(T Cut Tape 9,110
    • 1 -
    • 10 $0.0837
    • 100 $0.0771
    • 1000 $0.0723
    • 10000 $0.071
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    EBV Elektronik 1SS413CT,L3F(T 17 Weeks 10,000
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    1SS413 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS413 Toshiba Diode Silicon Epitaxial Schottky Barrier Type Original PDF
    1SS413,L3M Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20V 50MA FSC Original PDF
    1SS413CT,L3F Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20V 50MA SOD882 Original PDF
    1SS413(TL3,T) Toshiba Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 50MA FSC Original PDF

    1SS413 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS413CT Schottky Barrier Diode Silicon Epitaxial 1SS413CT 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage : VF(3) = 0.50 V (typ.) (2) Low reverse current : IR = 0.5 µA (max) (3) Small total capacitance : Ct = 3.9 pF (typ.) 3. Packaging and Internal Circuit


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    1SS413CT PDF

    1SS413

    Abstract: 11-L1 1-1L1A
    Text: 1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 Unit: mm High Speed Switching Application 0.6±0.05 : IR= 0.5 A max : CT = 3.9pF (typ.) 0.07 M A Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 25 V Reverse voltage


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    1SS413 1SS413 11-L1 1-1L1A PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS413 Schottky Barrier Diode Silicon Epitaxial 1SS413 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode fSC SOD-923 1: Cathode 2: Anode fSC Start of commercial production 1 2002-11 2014-04-03 Rev.2.0 1SS413 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )


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    1SS413 OD-923) PDF

    DIODE Sp marking code

    Abstract: marking code sp 1ss413 marking code 2 SOD523
    Text: 1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For high speed switching application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 1 SP Top View Marking Code: "SP" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value


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    1SS413 OD-523 OD-523 DIODE Sp marking code marking code sp 1ss413 marking code 2 SOD523 PDF

    DIODE Sp marking code

    Abstract: 1SS413 marking code sp
    Text: 1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application PINNING Features • Low forward voltage : VF 3 =0.50V(typ.). • Low reverse current : IR=0.5µA (max.). • Small total capacitance : CT=3.9pF (typ.). DESCRIPTION PIN 1 Cathode


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    1SS413 OD-523 OD-523 DIODE Sp marking code 1SS413 marking code sp PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS413 Schottky Barrier Diode Silicon Epitaxial 1SS413 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode SOD-923 1: Cathode 2: Anode fSC Start of commercial production 1 2002-11 2014-07-09 Rev.3.0 1SS413 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 )


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    1SS413 OD-923 PDF

    1ss413

    Abstract: SOD-523 marking Q
    Text: 1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Q Top View Marking Code: "Q" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value


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    1SS413 OD-523 OD-523 1ss413 SOD-523 marking Q PDF

    1SS413

    Abstract: 030619EAA
    Text: 1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 Unit: mm High Speed Switching Application 0.6±0.05 : IR= 0.5µA max : CT = 3.9pF (typ.) 0.07 M A Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse Voltage Symbol Rating


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    1SS413 1SS413 030619EAA PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS413 Schottky Barrier Diode Silicon Epitaxial 1SS413 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode fSC SOD-923 1: Cathode 2: Anode fSC 1 2014-02-05 Rev.1.0 1SS413 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )


    Original
    1SS413 OD-923) PDF

    1SS413

    Abstract: P1001
    Text: 1SS413 東芝ダイオード エピタキシャルショットキバリア形 1SS413 ○ 高速スイッチング用 : VF 3 = 0.50 V (標準) • 逆電流が小さい。 : IR = 0.5 A (最大) • 端子間容量が小さい。 : CT = 3.9 pF (標準) 0.6±0.05


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    1SS413 20x20mm 1SS413 P1001 PDF

    1SS413

    Abstract: No abstract text available
    Text: 1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 Unit: mm High Speed Switching Application 0.6±0.05 : IR= 0.5 A max : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic 0.07 M A 1.0±0.05 Low reverse current Small total capacitance


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    1SS413 1SS413 PDF

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


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    SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


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    BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


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    TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24 PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


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    SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    DF2S3.6SC

    Abstract: TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU 1SS421 TC7SZ02F TC7SZ08FU 1SS417 TC7SZ00AFS
    Text: 【正誤表】 下記内容に誤記載がありましたので正誤表を添付させていただきます。 •資料名: 汎用小信号面実装対応素子 (トランジスタ、 ダイオード、 セルパック) ■資料番号: BCJ0052E


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    BCJ0052E RN1310 RN2310 RN1303 RN2303 RN1302 RN2302 RN1304 RN2307 DF2S3.6SC TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU 1SS421 TC7SZ02F TC7SZ08FU 1SS417 TC7SZ00AFS PDF

    LT 543 common cathode

    Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current


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    2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor PDF

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 (トランジスタダイオード、セルパック) SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


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    TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558 PDF

    CMZB220

    Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
    Text: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード


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    SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B PDF

    CMG03

    Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A


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    SCE0004I TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 CMG03 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01 PDF

    2fu smd transistor

    Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


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    TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B PDF

    DF2S3.6SC

    Abstract: CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS
    Text: 東芝半導体製品総覧表 2010 年 1 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


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    SCJ0004O TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 DF2S3.6SC CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS PDF

    smd diode Lz zener

    Abstract: CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2011/9 SCE0004L Rectifiers General-Purpose Rectifiers Average Forward Current A


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    SCE0004L TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 smd diode Lz zener CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B PDF

    mg75n2ys40

    Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
    Text: 小信号ダイオード SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


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    050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A PDF