Contextual Info: 1SV313 TOSHIBA 1 SV3 1 3 TOSHIBA DIODE VCO FOR UHF BAND RADIO • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio • C0.5 V / c 2.5 V = 2-5 TyP- : rs = 0.35 O (Typ.) Low Series Resistance Useful for Small Size Tuner M AXIM UM RATINGS (Ta = 25°C)

Contextual Info: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm l High Capacitance Ratio : C0.5V/C2.5V = 2.5 Typ. l Low Series Resistance : rs = 0.35Ω (Typ.) l Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

1SV313

Contextual Info: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm High Capacitance Ratio : C0.5V/C2.5V = 2.5 Typ. Low Series Resistance : rs = 0.35Ω (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm High Capacitance Ratio : C0.5V/C2.5V = 2.5 Typ. Low Series Resistance : rs = 0.35Ω (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: 1SV313 TOSHIBA 1 SV3 1 3 TOSHIBA DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : Co 5 y / C2.5 y = 2.5 Typ. Low Series Resistance : rs = 0.35 ü, (Typ.) Useful for Small Size Tuner M AXIM UM RATINGS (Ta = 25°C)

Contextual Info: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm High Capacitance Ratio : C0.5V/C2.5V = 2.5 Typ. Low Series Resistance : rs = 0.35Ω (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

1SV313

Contextual Info: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm z High Capacitance Ratio : C0.5V/C2.5V = 2.5 Typ. z Low Series Resistance : rs = 0.35Ω (Typ.) z Useful for Small Size Tuner ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 1SV313 T O SH IB A TOSHIBA DIODE VCO FOR UHF BAND RADIO • • SILICON EPITAXIAL PLANAR TYPE 1 SV3 1 3 High Capacitance Ratio : C0.5V /C 2.5V = 2-5 TyP- : rs = 0.35 CI (Typ.) Low Series Resistance Useful for Small Size Tuner IV/I A V I l\ /I I IIV /I Dl \ A A“\ I TI II MM \ J« J

1SV313

Contextual Info: 20010110 1SV313 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 0.5V ～ 4 V

c05 10 diode

Contextual Info: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm High Capacitance Ratio : C0.5V/C2.5V = 2.5 Typ. Low Series Resistance : rs = 0.35Ω (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

diode marking v6

Abstract: marking v6 marking v6 diode diode v6 diode V6 on v6 diode DIODE V6 SMD Silicon Tuner V6 SMD 1SV313
Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV313 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C0.5V/C0.25V=2.1 Typ. Low Series Resistance:rs=0.35 +0.1 2.6-0.1 1.0max (Typ.) 0.375 0.475 +0.05

s00f

Abstract: 31cj
Contextual Info: kM ian-i d V d iHVHO 33S •■•Z-l bL\¿-VQS •ON ‘9MUQ ‘ON IMVd m fs is n 66/91/80 2 J O 1 vQs 3'n 1 V a 0 d aZES89 0 3 N I X 3 1 0 H 31TQ SNOISIA3tì arqj SIMliS 3HVN 31CJ 01 / 8 0 / 6 6 srr 3 N U V 1 d 1V N i n d 31 U3JVHOS Giia-aoflzian N03 1SV313U

1SV313

Contextual Info: 1SV313 TOSHIBA TOSHIBA DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 SV3 1 3 Unit in mm High Capacitance Ratio : Cq 5 y / C2 .5 y = 2.5 Typ. Low Series Resistance : rs = 0.35 ü, (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C)

1SV313

Contextual Info: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm l High Capacitance Ratio : C0.5V/C2.5V = 2.5 Typ. l Low Series Resistance : rs = 0.35Ω (Typ.) l Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: 1SV313 TO SHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE UV Í1Í VCO FOR UHF BAND RADIO • • High Capacitance Ratio : Co.5 V / C2.5 V = 2-5 Typ. : rs = 0.35 fl (Typ.) Low Series Resistance Useful for Small Size Tuner M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: kM ia n - i d Vd iHVHO 33S •■•Z-l b L\¿-VQS •ON ‘9MUQ ‘ON IMVd m fs is n 66/91/80 2 J O 1 vQ s '3n 1 V a 0 d aZES89 0 3 N I X 310H 31TQ SNOISIA3tì a rq j SI M l iS 3HVN 31CJ s r r 01 / 8 0 / 6 6 1SV313U 1H0I3H » 0 V 1 S I 6 0 V 0 £ ' Z 3 N I3 V » 3 V d

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5