Untitled
Abstract: No abstract text available
Text: Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION • Fabricated with RICMOS'“ IV Bulk 0.8 urn Process • Total Dose Hardness through 1x10e rad Si02 • Neutron Hardness through 1x1014 cnrr2 OTHER • Read/Write Cycle Times s 40 ns (-55 to 125°C)
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1x10e
1x101
36-Lead
28-Lead
HC6856
1E-10
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Untitled
Abstract: No abstract text available
Text: Honeywell 64K X 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION • Fabricated using DESC approved QML 1,2nm RICMOS process • Total Dose Hardness through 1x106 rad SiOz • Neutron Hardness through 1x1 O'* cm 2 OTHER • Access Time of 25 ns (typical)
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1x106
1x109
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HX6856
Abstract: No abstract text available
Text: b3E » Honeywell 4551Ö72 OGODTTS S71 • H 0 N 3 Military Products HON E Y I i J E L L / S S E C Preliminary 32K X 8 RADIATION-HARDENED STATIC RAM-SOI HX6856 FEATURES RADIATION OTHER Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 urn Process
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1x10s
1x101
HX6856
36-Lead
28-Lead
HX6856/1
HX6856/2
HX6856
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honeywell mram
Abstract: No abstract text available
Text: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out
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0D00fl4D
1x106
1x1014N/cm2
1x101
1x106rad
honeywell mram
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