HC6364
Abstract: IH00 Honeywell sram 8Kx8
Text: HONEYWELL/S S E C 15E D | MSS1Ô72 0000433 3 | Honeywell HC6464 Military Products T - 4 d-2 5 -0 5 ' 64K x 1 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 jim Process • Similar Characteristics to HC6364 - 8Kx8 SRAM
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HC6464
1x101
1x109
HC6364
IH00
Honeywell sram 8Kx8
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pepi cr
Abstract: No abstract text available
Text: 55E D • MS51fl?2 OOGOflOa 277 ■ H0N3 Honeywell HONEYWELL/S S E C Military Products «"p q , -23 - o S 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION OTHER • Fabricated using DESC approved QML 1.2|xm RICMOS process • Access Time of 25 ns (typical
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MS51fl
1x106
1x101
1x109
PIN23
pepi cr
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Untitled
Abstract: No abstract text available
Text: Honeywell 64K X 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION • Fabricated using DESC approved QML 1,2nm RICMOS process • Total Dose Hardness through 1x106 rad SiOz • Neutron Hardness through 1x1 O'* cm 2 OTHER • Access Time of 25 ns (typical)
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1x106
1x109
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Untitled
Abstract: No abstract text available
Text: bBE D • MSS1Ô7S O O O O ^ HONEYÜI ELL/ S 24T « S E C Honeywell honb - 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION • Fabricated using DESC approved QML 1.2nm RICMOS process • Total Dose Hardness through 1x10s rad Si02
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HC6464
24-Pin
1x10s
1x101
PIN23
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1x10
Abstract: MN55441 HC6364
Text: Kcmeywell HONEYÙJELL/S S E C 3ÖE D 4551Ô72 DOüGSSb ñ B 3 H 0 N 3 - Military Products Advance Information HX6464 64K x 1 RADIATION-HARDENED STATIC RAM - SOI -OS FEATURES RADIATION OTHER Fabricated with RICMOS Silicon on Insulator
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1x107
1x101
10Upsets/Cell-Day
1x1013rad
1x10
MN55441
HC6364
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