HC6364 Search Results
HC6364 Price and Stock
Honeywell Sensing and Control HC6364XSHAT |
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HC6364XSHAT | 49 |
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Seiko Epson Corporation 5962H3829445Q9CSTANDARD SRAM, 8KX8, 120NS, CMOS (Also Known As: HC6364/2XQHBC) |
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5962H3829445Q9C | 7 |
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Honeywell Sensing and Control HC6364/2XCH-TIC,SRAM,8KX8,CMOS, RAD HARD,FP,36PIN,CERAMIC |
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HC6364/2XCH-T | 5 |
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Honeywell International Inc 5962H3829445Q9CSTANDARD SRAM, 8KX8, 120NS, CMOS (Also Known As: HC6364/2XQHBC) |
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5962H3829445Q9C | 3 |
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Honeywell Sensing and Control HC6364XCH-T |
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HC6364XCH-T | 1 |
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HC6364 Datasheets Context Search
Catalog Datasheet |
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HC6364
Abstract: IH00 Honeywell sram 8Kx8
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OCR Scan |
HC6464 1x101 1x109 HC6364 IH00 Honeywell sram 8Kx8 | |
HC6364Contextual Info: Honeywell 8K X 8 RADIATION-HARDENED STATIC RAM HC6364 FEATURES RADIATION OTHER • Fabricated using DESC Approved QML 1.2 urn RICMOS Process • Listed on SMD #5962-38294. Available as M IL-l-38535 QML Class Q and Class V • Total Dose Hardness through |
OCR Scan |
1x10e 1x109 1x101 IL-l-38535 HC6364 | |
Contextual Info: Honeywell HC6364 Military Products 8K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 urn Process • Total Dose Hardness through 1x106 rad S i02 • Neutron Hardness through 1x1014cm '2 • Access Time of 25 nsec (typical) |
OCR Scan |
HC6364 1x106 1x1014cm | |
HC6364Contextual Info: b3E D MSS1Ô7E ÜGQD^a T Mb Honeywell IH0N3 8K x 8 RADIATION-HARDENED STATIC RAM HC6364 FEATURES OTHER RADIATION Fabricated using DESC Approved QML 1.2 nm RICMOS1“ Process • Listed on SMD #5962-38294. Available as MIL-l-38535 QML Class Q and Class V Total Dose Hardness through |
OCR Scan |
HC6364 MIL-l-38535 1x10s 1x101 1x109 1x10eto 36-LEAD 28-LEAD HC6364/1 HC6364 | |
Contextual Info: S5E J> m 4 5 5 1 0 7 3 0 0 0 0 0 3 0 4 22 • Honeywell H0N3 - HONEYlüELL/S S E C Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6828 FEATURES RADIATION OTHER • Fabricated with RICMOS Silicon on Insulator |
OCR Scan |
HX6828 1x106 1x101 | |
DQ4-21Contextual Info: b3E D • 45S1Û7E ODDDTB? HONEYI i l ELL/ S Military Products Honeywell 477 ■ H 0 N 3 S E C Advance Information 8K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6364 FEATURES OTHER RADIATION Fabricated with RICMOS" Silicon on Insulator SOI 1.2 urn Process |
OCR Scan |
1x10s HX6364 DQ4-21 | |
ed18810
Abstract: 5962-3829453MTa QML-38535 5962-3829410MYX 5962-R085-93 IDT7164L70L32B 5962-3829412MXA GDIP1-T28 5C640 UT6717685
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OCR Scan |
5962-R085-93 S8015 0EU86 MN14-3c12 GD3LG21 ed18810 5962-3829453MTa QML-38535 5962-3829410MYX 5962-R085-93 IDT7164L70L32B 5962-3829412MXA GDIP1-T28 5C640 UT6717685 | |
HM1E
Abstract: 5962-3829435 IDT7164L70L32B mk48h64 5962-3829407MXX 62l64-45 HC6364 5962-8552505X QML-38535 IDT7164S55DB
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5962-R085-93 0EU86 MN14-3c12 HM1E 5962-3829435 IDT7164L70L32B mk48h64 5962-3829407MXX 62l64-45 HC6364 5962-8552505X QML-38535 IDT7164S55DB | |
Contextual Info: Honeywell HS6464 Military Products Preliminary 64K x 1 RADIATION-HARDENED STATIC RAM - SOI FEATURES R A D IA T IO N O THER • Fabricated with Silicon on Insulator S O I 1.2 |xm Process • Im proved Characteristics over H C 6 3 6 4 - 8K x8 S R A M • 1 7 % Access T im e Im provem ent over H C 6 4 6 4 (1 2 5 °C ) |
OCR Scan |
HS6464 10upsets/cell-day | |
QP7C185A-55DMB
Abstract: QP7C185A IDT7164L70L32B QP7C185A-70DMB qml-38535 MT5C6408C-20 5962-3829435 EDI8810L 0EU86 22 35L CAPacitor
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5962-R085-93 0EU86 QP7C185A-55DMB QP7C185A IDT7164L70L32B QP7C185A-70DMB qml-38535 MT5C6408C-20 5962-3829435 EDI8810L 0EU86 22 35L CAPacitor | |
Contextual Info: b3E D MSS1Ö72 ÜDDlQQb SS2 « H O N S Honeywell Military Products 8K x 8 RADIATION-HARDENED STATIC ROM - SOI HX6664 FEATURES O THER RADIATION Fabricated with RICM OS Silicon on Insulator SOI 1.2 (o.m Process - Latchup Free Total Dose Hardness through |
OCR Scan |
HX6664 1x107 1x101 | |
Contextual Info: /V' HONEYùJELL/ S S E C 3ÔE D M551Ô75 0Q00S54 M I HÔN3 Military Products Advance Information HX6364 8K x 8 RADIATION-HARDENED STATIC RAM - SOI FEATURES RADIATIO N OTHER • Fabricated with RICMOS Silicon on Insulator SOI 1.2 ¡am Process • Access Tim e < 45 nsec (-55 to 125°C) |
OCR Scan |
0Q00S54 1x107 1x101 10upsets/cell-day 1x1013rad | |
1x10
Abstract: MN55441 HC6364
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OCR Scan |
1x107 1x101 10Upsets/Cell-Day 1x1013rad 1x10 MN55441 HC6364 | |
Contextual Info: Honeywell HC6856 Military Products Preliminary 256K-BIT RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Bulk 0.8 im Process • Total Dose Hardness through 1x106 rad(Si02 • Optional Architecture - 32K x 8 - 256Kx 1 |
OCR Scan |
HC6856 256K-BIT 1x106 256Kx 1x1014cm 1x109 1x101 | |
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TTL 7464Contextual Info: b3E D Honeywell 4S51Ô72 DDD10DÖ 3ES BI H0N3 HONEYUELL/S S E C NON-VOLATILE RAM Advance Information 64K x 1 NON-VOLATILE RAM-MAGNETORESISTIVE HC7464 FEATURES • Non-volatile and NDRO Non-destructive read out • 1 |is Read Cycle Time • Unlimited read/write (>1E15 cycles) |
OCR Scan |
DDD10DÃ HC7464 TTL 7464 | |
socket g34 pinout
Abstract: smd marking WMM
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OCR Scan |
HC6664 1x10s 1x1014N/cm2 1x109 MIL-l-38535 36-LE 28-LEAD HC6364/1 socket g34 pinout smd marking WMM | |
8kx8 ROM
Abstract: rom radiation HX6664
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OCR Scan |
1x107 1x1013rad HX6664 8kx8 ROM rom radiation HX6664 | |
smd TRANSISTOR code marking 8K
Abstract: pepi c TRANSISTOR SMD MARKING CODE QO SMD MARKING code 4N
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OCR Scan |
1x106 1x1014N/cm2 1x109 1x101 36-Pin 28-Pin MIL-l-38535 36-LEAD 28-LEAD HC6364/1 smd TRANSISTOR code marking 8K pepi c TRANSISTOR SMD MARKING CODE QO SMD MARKING code 4N | |
5962L0053605VYC
Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
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MIL-HDBK-103AJ MIL-HDBK-103AH MIL-HDBK-103AJ 5962L0053605VYC 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA |