Untitled
Abstract: No abstract text available
Text: ASL19D High Gain, Low Noise Amplifier Features Description 24.5 dB Gain at 2 GHz 36 dBm OIP3 at 2 GHz 19 dBm P1dB at 2 GHz 0.95 dB NF at 2 GHz Two-stage LNA ASL19D is a two-stage LNA, which has a low noise, high gain, and high linearity over a wide
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ASL19D
ASL19D
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mixer lnb
Abstract: No abstract text available
Text: MILLIMETER-WAVE SUBSYSTEMS LNB SERIES Block Up/Downconversion of Millimeter-Wave 26–40 GHz and Microwave (2–16 GHz) Bands HIGHPASS FILTER LNA MIXER ATTENUATOR IF AMP 26 – 40 GHz 2 – 16 GHz ATTENUATOR x3 10 MHz LO LO AMPLIFIER SYS SERIES Miniature Up/Downconverter
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417-116
Abstract: 2SC5509 NE663M04 NE663M04-T2-A S21E
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 15 GHz • HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH IP3: NF = 27 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz
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NE663M04
IS21EI2
OT-343
NE663M04
417-116
2SC5509
NE663M04-T2-A
S21E
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ca 9088
Abstract: 2SC5509 NE663M04 NE663M04-T2 S21E transistor c 6093
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 15 GHz • HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH IP3: NF = 27 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz
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NE663M04
IS21EI2
OT-343
NE663M04
ca 9088
2SC5509
NE663M04-T2
S21E
transistor c 6093
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Untitled
Abstract: No abstract text available
Text: Wireless LAN Front-End for 802.11a,b,g,n Single Dual-Band PC Applications Part numbers link to product information D 5 GHz Rx Diplexer LNA E 2 GHz Rx LNA A Switch SPDT or Diversity F C B Diplexer 5 GHz Tx PA G 2 GHz Tx PA C Switches Switches A AS236-321LF
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AS236-321LF
SKY13267-321LF
SKY13276-334
SKY13318-321LF
SKY13335-381LF
SKY13344-378LF
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Untitled
Abstract: No abstract text available
Text: HMC-C022 v03.0512 WIDEBAND LNA MODULE 2 - 20 GHz Features Amplifiers - Connectorized Noise Figure: 2 dB @ 8 GHz Flat Gain: 14 dB ± 0.5 dB P1dB Output Power: +18 dBm @ 8 GHz Spurious-Free Operation Regulated Supply and Bias Sequencing Typical Applications
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HMC-C022
HMC-C022
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Untitled
Abstract: No abstract text available
Text: HMC-C022 v03.0512 WIDEBAND LNA MODULE 2 - 20 GHz Features Amplifiers - ConneCtorized noise figure: 2 dB @ 8 GHz flat Gain: 14 dB ± 0.5 dB p1dB output power: +18 dBm @ 8 GHz spurious-free operation regulated supply and Bias sequencing Typical Applications
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HMC-C022
HMC-C022
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pin diagram for IC 7476
Abstract: marking 724 diode sot-363 datasheet and pin diagram of IC 7476 7476 marking 259 sot363 7476 data sheet 7476 datasheet FF200 ic 7294 R5 SOT363
Text: BGA 425 Si-MMIC-Amplifier in SIEGET 25-Technologie 4 5 Multifunctional casc. 50 block LNA / MIX 6 Unconditionally stable Gain |S21|2 = 18.5 dB at 1.8 GHz (Appl.1) gain |S 21| 2 = 22 dB at 1.8 GHz (Appl.2) 3 2 IP 3out = +7 dBm at 1.8 GHz (V D=3V,ID=9.5mA)
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25-Technologie
VPS05604
OT-363
Oct-12-1999
pin diagram for IC 7476
marking 724 diode sot-363
datasheet and pin diagram of IC 7476
7476
marking 259 sot363
7476 data sheet
7476 datasheet
FF200
ic 7294
R5 SOT363
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Untitled
Abstract: No abstract text available
Text: HMC-C002 v05.0512 WIDEBAND LNA MODULE 2 - 20 GHz Features Amplifiers - ConneCtorized noise figure: 2 dB @ 8 GHz flat Gain: 13 dB ± 0.5 dB p1dB output power: +18 dBm @ 8 GHz 50 ohm matched input/output regulated supply and Bias sequencing Typical Applications
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HMC-C002
HMC-C002
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Untitled
Abstract: No abstract text available
Text: HMC-C002 v05.0512 WIDEBAND LNA MODULE 2 - 20 GHz Features Amplifiers - Connectorized Noise Figure: 2 dB @ 8 GHz Flat Gain: 13 dB ± 0.5 dB P1dB Output Power: +18 dBm @ 8 GHz 50 Ohm Matched Input/Output Regulated Supply and Bias Sequencing Typical Applications
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HMC-C002
HMC-C002
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Untitled
Abstract: No abstract text available
Text: HMC-C022 v01.0906 WIDEBAND LNA MODULE, 2 - 20 GHz 1 Features AMPLIFIERS Noise Figure: 2 dB @ 8 GHz Flat Gain: 14 dB ± 0.5 dB P1dB Output Power: +18 dBm @ 8 GHz Spurious-Free Operation Regulated Supply and Bias Sequencing Typical Applications Hermetically Sealed Module
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HMC-C022
HMC-C022
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c022
Abstract: RF LNA 10 GHz HMC-C022
Text: HMC-C022 v02.1007 WIDEBAND LNA MODULE, 2 - 20 GHz 9 Features CONNECTORIZED MODULES - AMPLIFIERS Noise Figure: 2 dB @ 8 GHz Flat Gain: 14 dB ± 0.5 dB P1dB Output Power: +18 dBm @ 8 GHz Spurious-Free Operation Regulated Supply and Bias Sequencing Typical Applications
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HMC-C022
HMC-C022
c022
RF LNA 10 GHz
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Untitled
Abstract: No abstract text available
Text: HMC-C022 v00.1005 WIDEBAND LNA MODULE, 2 - 20 GHz 16 Features AMPLIFIERS - CONNECTORIZED MODULES Noise Figure: 2 dB @ 8 GHz Flat Gain: 14 dB ± 0.5 dB P1dB Output Power: +18 dBm @ 8 GHz Spurious-Free Operation Regulated Supply and Bias Sequencing Typical Applications
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HMC-C022
HMC-C022
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RF LNA 10 GHz
Abstract: HMC-C022 LNA at 15 GHZ
Text: HMC-C022 v00.1005 WIDEBAND LNA MODULE, 2 - 20 GHz 9 Features AMPLIFIERS - CONNECTORIZED MODULES Noise Figure: 2 dB @ 8 GHz Flat Gain: 14 dB ± 0.5 dB P1dB Output Power: +18 dBm @ 8 GHz Spurious-Free Operation Regulated Supply and Bias Sequencing Typical Applications
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HMC-C022
HMC-C022
RF LNA 10 GHz
LNA at 15 GHZ
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2SC5507
Abstract: NE661M04 NE661M04-T2 S21E 842 ic 2912
Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz •
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NE661M04
IS21EI2
OT-343
NE661M04
NE661M04-T2
24-Hour
2SC5507
NE661M04-T2
S21E
842 ic
2912
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pin diagram for IC 7476
Abstract: datasheet and pin diagram of IC 7476 IC 7476 datasheet ic 7476 pin diagram 7476 data sheet sot 23-5 marking code CO2 IC 7476 transistor bf 425 VPS05605 7476
Text: BGA 425 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Preliminary data • Multifunctional casc. 50 Ω block LNA / MIX 4 • Unconditionally stable • Gain |S21|2 = 18.5 dB at 1.8 GHz (appl.1) gain |S 21| 2 = 22 dB at 1.8 GHz (appl.2) 2 IP 3out = +7 dBm at 1.8 GHz (V D=3V,ID=9.5mA)
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25-Technologie
VPS05605
EHA07371
Jul-14-1998
pin diagram for IC 7476
datasheet and pin diagram of IC 7476
IC 7476 datasheet
ic 7476 pin diagram
7476 data sheet
sot 23-5 marking code CO2
IC 7476
transistor bf 425
VPS05605
7476
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HMC-C002
Abstract: No abstract text available
Text: HMC-C002 v03.1007 WIDEBAND LNA MODULE, 2 - 20 GHz 9 Features CONNECTORIZED MODULES - AMPLIFIERS Noise Figure: 2 dB @ 8 GHz Flat Gain: 13 dB ± 0.5 dB P1dB Output Power: +18 dBm @ 8 GHz 50 Ohm Matched Input/Output Regulated Supply and Bias Sequencing Typical Applications
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HMC-C002
HMC-C002
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HMC-C001
Abstract: No abstract text available
Text: HMC-C001 v00.0904 WIDEBAND LNA MODULE, 2 - 20 GHz AMPLIFIERS - CONNECTORIZED MODULES 9 Features Noise Figure: 2 dB @ 10 GHz Flat Gain: 15 dB ± 0.5 dB P1dB Output Power: +14 dBm @ 10 GHz 50 Ohm Matched Input/Output Regulated Supply + 9V to +15V @ 65mA Typical Applications
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HMC-C001
HMC-C001
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C5023
Abstract: ZQ50A
Text: 1 wrm HEW LETT 1 LEM PA C K A R D 23 GHz LNA 2 1 .2 -2 6 .5 GHz Technical Data HMMC-5023 Features • Frequency Range: 21.2-23.6 GHz and 24.5-26.5 GHz Specified 21-30 GHz Performance • Low Noise Temperature: 226 K (2.5 dB N.F.) Typical • High Gain: 24 dB Typical
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HMMC-5023
HMMC-5023
5965-5448E
C5023
ZQ50A
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HMMC-5023
Abstract: 74x244
Text: What H E W L E T T * mLliMPACKARD 23 GHz LNA 21.2-26.5 GHz Technical Data HMMC-5023 Features • Frequency Range: 2 1 .2 -2 3 .6GHz and 2 4 .5 -2 6 .5 GHz Specified 2 1 -3 0 GHz Performance • Low N oise Temperature: 226 K (2.5 dB N.F.) Typical • High Gain: 24 dB Typical
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HMMC-5023
2980x620
74x24
HMMC-5023
74x244
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Ablebond 71
Abstract: Ablebond 190
Text: • 2 2 1 HEWLETT' ëSE M PACKARD 23 GHz LNA 21.2-26.5 GHz Technical Data HMMC-5023 Features • Frequency Rajige: 21.2-23.6 GHz and 24.5-26.5 GHz Specified 21-30 GHz Performance • Low Noise Temperature: 226 K (2.5 dB N.F.) Typical • High Gain: 24 dB Typical
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HMMC-5023
HMMC-5023
Ablebond 71
Ablebond 190
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9088 cb
Abstract: 4576 0637
Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES_ • HIGH GAIN BANDW IDTH: f t = 17 GHz • HIGH POWER GAIN: IS2 1 EI2 = 11 dB TYP at 2 GHz . LOW NOISE FIGURE: NF = 1 2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz
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OT-343
NE663M04
HS025
E663M
NE663M04
lS21l
24-Hour
9088 cb
4576 0637
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Untitled
Abstract: No abstract text available
Text: S IE M E N S Si-MMIC-Amplifier BGA425 in SIEGET 25-Technology Preliminary Data # # # # # # # Multifunctional Case. 50 D. Block LNA/MIX Unconditionally stable Gain |s21f =18.5 dB at 1.8 GHz (appl.1) Gain |s 21|2 = 2 2 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (VD=3V,lD=9.5mA)
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BGA425
25-Technology
OT363
Q62702-G0058
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES HIGH GAIN BANDW IDTH: f t = 17 GHz HIGH POWER GAIN: IS2 1 EI2 = 11 dB TYP at 2 GHz LOW NOISE FIGURE: NF = 1 2 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz NEW LOW PROFILE M04 PACKAGE:
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OT-343
NE663M04
NE663M04
E663M
NE663M
NE663M04-T2
24-Hour
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