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Infineon Technologies AG BAS21E6327HTSA1 DIODE GEN PURP 200V 250MA SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BAS21E6327HTSA1	Cut Tape	28,659		1	1 $0.15 10 $0.084 100 $0.0683 1000 $0.05349 10000 $0.05349	Buy Now
	BAS21E6327HTSA1	Digi-Reel	28,659		1	1 $0.15 10 $0.084 100 $0.0683 1000 $0.05349 10000 $0.05349	Buy Now
	BAS21E6327HTSA1	Reel	27,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.02961	Buy Now
Avnet Americas	BAS21E6327HTSA1	Reel	24,000	4 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.0239	Buy Now
Mouser Electronics	BAS21E6327HTSA1		34,921			1 $0.15 10 $0.074 100 $0.055 1000 $0.049 10000 $0.027	Buy Now
Newark	BAS21E6327HTSA1	Cut Tape	47,964		1	1 $0.125 10 $0.07 100 $0.046 1000 $0.041 10000 $0.041	Buy Now
Rochester Electronics	BAS21E6327HTSA1		4,398		1	1 $0.0286 10 $0.0286 100 $0.0269 1000 $0.0243 10000 $0.0243	Buy Now

TME	BAS21E6327HTSA1		2,886		1	1 $0.2413 10 $0.1412 100 $0.0765 1000 $0.0495 10000 $0.0403	Buy Now
Ameya Holding Limited	BAS21E6327HTSA1		3,008			1 - 10 - 100 - 1000 - 10000 -	Get Quote
ComSIT USA	BAS21E6327HTSA1		920			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip 1 Exchange	BAS21E6327HTSA1		185,820			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	BAS21E6327HTSA1		1,149,000	5 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	BAS21E6327HTSA1		918,000		1	1 - 10 - 100 - 1000 - 10000 $0.1048	Buy Now
Vyrian	BAS21E6327HTSA1		127,949			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	BAS21E6327HTSA1		36,680			1 - 10 - 100 - 1000 $0.0812 10000 $0.0542	Buy Now
Advanced Thermal Solutions Inc ATS-21E-95-C2-R0 HEATSINK 40X40X30MM R-TAB T766
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ATS-21E-95-C2-R0	Tray	25		1	1 $7.09 10 $6.278 100 $5.5557 1000 $4.92796 10000 $4.92796	Buy Now
Sager	ATS-21E-95-C2-R0				25	1 - 10 - 100 $5.99 1000 $5.65 10000 $5.65	Buy Now
Advanced Thermal Solutions Inc ATS-21E-25-C2-R0 HEATSINK 60X60X25MM XCUT T766
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ATS-21E-25-C2-R0	Tray	25		1	1 $8.99 10 $7.957 100 $7.0405 1000 $6.24464 10000 $6.24464	Buy Now
Advanced Thermal Solutions Inc ATS-21E-50-C2-R0 HEATSINK 30X30X15MM L-TAB T766
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ATS-21E-50-C2-R0	Tray	25		1	1 $5.43 10 $4.802 100 $4.2494 1000 $3.76947 10000 $3.76947	Buy Now
Advanced Thermal Solutions Inc ATS-21E-51-C2-R0 HEATSINK 30X30X20MM L-TAB T766
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ATS-21E-51-C2-R0	Tray	25		1	1 $5.57 10 $4.933 100 $4.3651 1000 $3.87209 10000 $3.87209	Buy Now

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S21E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MT3S150P TOSHIBA Transistor GaAs NPN Epitaxial Mesa Type MT3S150P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low Noise Figure: NF=0.95dB @f=1 GHz • High Gain: \|S21e\|2=11.5dB (@f=1 GHz) Marking ＭＰ Absolute Maximum Ratings (Ta = 25°C)	Original	MT3S150P SC-62	PDF
MT3S111TU Abstract: No abstract text available Text: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: \|S21e\|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05	Original	MT3S111TU MT3S111TU	PDF
marking mh Abstract: 2SC3606 Text: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC3606 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF = 1.1dB, \|S21e\|2 = 11dB f = 1 GHz 1 0.55 Low noise figure, high gain. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1	Original	2SC3606 OT-23 marking mh 2SC3606	PDF
MT3S113 Abstract: transistor 2F to-236 4360A Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:\|S21e\|2=11.8dB(Typ.) (@ f=1GHz) Marking	Original	MT3S113 O-236 SC-59 MT3S113 transistor 2F to-236 4360A	PDF
UPA831TF Abstract: NE681 NE68130 NE856 NE85630 S21E UPA831TF-T1 UPA834TF 7371 802 transistor on 4409 Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS LOW NOISE: Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA 2.1 ± 0.1 1.25 ± 0.1 HIGH GAIN: Q1: \|S21E\|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA •	Original	NE856, NE681) UPA831TF UPA831TF UPA831TF-T1 NE85630 NE68130 UPA834TF 24-Hour NE681 NE68130 NE856 NE85630 S21E UPA831TF-T1 7371 802 transistor on 4409	PDF
transistor Bf 444 Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: \|S21E\|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA	Original	UPA801T NE856 100mA UPA801T 24-Hour transistor Bf 444 LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN S21E UPA801T-T1	PDF
Silicon Bipolar Transistor Abstract: MP4T56800 MP4T568 Medium Power Bipolar Transistors S21E S22E c 1685 transistor Text: Medium Power, 12 Volt, High fT NPN Silicon Bipolar Transistor MP4T56800 V2.00 Features •High Output Power, 23 dBm P1dB @ 1 GHz •High Gain-Bandwidth Product, 4 GHz fT •High Power Gain, \| S21E \|2 = 12 dB @ 1 GHz GTU max. = 11 dB @ 2 GHz Description The MP4T568 is a medium power, high fT silicon NPN	Original	MP4T56800 MP4T568 MP4T56800, Silicon Bipolar Transistor MP4T56800 Medium Power Bipolar Transistors S21E S22E c 1685 transistor	PDF
2SC5065 Abstract: 150-1 MARKING toshiba 133 Text: 2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.1dB, \|S21e\|2 = 12dB f = 1 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating	Original	2SC5065 2SC5065 150-1 MARKING toshiba 133	PDF
ic 741 free Abstract: 2SA1977 NE68133 NE97733 NE97733-T1 S21E iC 828 Transistor Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB at 1 GHz 33 SOT 23 STYLE	Original	NE97733 NE68133 NE97733 2SA1977 NE97733-T1 24-Hour ic 741 free 2SA1977 NE68133 NE97733-T1 S21E iC 828 Transistor	PDF
transistor 8730 Abstract: UPA800T NPN Transistor 8440 NE680 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: \|S21E\|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT	Original	UPA800T NE680 UPA800T 24-Hour transistor 8730 NPN Transistor 8440 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240	PDF
NJ 25 50 N Abstract: No abstract text available Text: SILICON NPN EPITAXIAL PLANAR T Y P E 2SC4322 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm +0.5 2.5-0.3 . Low Noise Figure, High Gain. . NF=1.8dB, I S21e \|2=7.5dB f=2GHz M A X I M U M RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage	OCR Scan	2SC4322 UHJ1U1O\00? 2SC4315 NJ 25 50 N	PDF
2SC4864 Abstract: sanyo lc 15011 ZS22 ic 3586 Text: Ordering number : EN 4 5 8 3 SAÊYO i No.4583 _ 2SC4864 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications Features • Low noise : NF = l.ldB typ f=lGHz •High gain: I S21e I 2= lldB typ (f= 1GHz)	OCR Scan	2SC4864 sanyo lc 15011 ZS22 ic 3586	PDF
CQ 817 Abstract: cq 0765 TRANSISTOR cq 817 ic 4580 2SC4860 Text: Ordering number: E N 4 5 8 0 2SC4860 No.4580 NPN E pitaxial P lan ar Silicon Transistor SA\YO UHF Converter, Local Oscillator Applications i F e a tu r e s • H igh cutoff frequency :fT = 6.5GHztyp. * H igh gain : I S21e l2= 11.5dB typ f= 1GHz . •Sm all Cob : N F = 0.65pF typ.	OCR Scan	EN4580 2SC4860 CQ 817 cq 0765 TRANSISTOR cq 817 ic 4580	PDF
Untitled Abstract: No abstract text available Text: MT4S300T 東芝トランジスタシリコンゲルマニウムＮＰＮエピタキシャルプレーナ型 MT4S300T 単位: mm ○ UHF～SHF 帯低雑音増幅用 1.2±0.05 0.9±0.05 • 高利得です。:\|S21e\|2=18dB 標準 (@f=2GHz) • 高静電破壊耐量:2kV 以上(HBM 法)	Original	MT4S300T	PDF

ir sensor circuit diagram using LM358 Abstract: uPD5555G b102k B222K pyroelectric amplifier circuit pyroelectric infrared sensor light sensor LM358 IR sensor LM358 2903M IMD-B101-01 Text: Please read CAUTION and Notice in this catalog for safety. This catalog has only typical specifications. Therefore you are requested to approve our product specification or to transact the approval sheet for product specification, before your ordering. S21E3.pdf 03.2.17	Original	S21E3 S21E-3 ir sensor circuit diagram using LM358 uPD5555G b102k B222K pyroelectric amplifier circuit pyroelectric infrared sensor light sensor LM358 IR sensor LM358 2903M IMD-B101-01	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A 2SC5095 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC509 5 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = 1.8dB, \|S21el2 = 7.5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SC5095 2SC509 S21el2	PDF
Untitled Abstract: No abstract text available Text: TO SH IB A 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 U nit in mm U H F -C BAND LOW NOISE AMPLIFIER APPLICATIONS • • • Low Noise Figure NF = 2.5dB, \|S2ie l2= 14.5dB f = 500MHz NF = 3.0dB, \|S21el2= 9-0dB (f=lG H z) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC3098 500MHz) S21el2= S21el2	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2 S C 5 1 11 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 11 FOR VCO APPLICATION M A X IM U M RATINGS ÍTa = 2 5 ° 0 U n i t in m m „ i.6 ±o.2 . ”3 fO H Ä> c ts 3 o «! \|S21el TRANSITION FREQUENCY dB fT (GHz) DC CURRENT GAIN	OCR Scan	2SC5111 S21el	PDF
KTC3600U Abstract: 416 J50 Text: SEMICONDUCTOR KTC3600U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.1dB, \|S21e\| =13dB f=1GHz . G J A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage	Original	KTC3600U -j250 -j150 -j100 KTC3600U 416 J50	PDF
KTC3770V Abstract: transistor j50 marking s22 Text: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, \|S21e\|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage	Original	KTC3770V -j250 -j150 -j100 KTC3770V transistor j50 marking s22	PDF
A773* Transistor Abstract: A773 Transistor Text: DATA SHEET SILICON TRANSISTOR µPA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD PACKAGE DRAWINGS (Unit: mm) FEATURES • Low Current, High Gain \|S21e\|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz	Original	PA807T PA807T-T1 A773* Transistor A773 Transistor	PDF
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type Product specification 2SC3429 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Noise Figure 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF=1.5dB,\|S21e\|2=16dB f=500MHz +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1	Original	2SC3429 OT-23 500MHz) 500MHz	PDF
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type Product specification 2SC3606 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF = 1.1dB, \|S21e\|2 = 11dB f = 1 GHz 1 0.55 Low noise figure, high gain. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1	Original	2SC3606 OT-23	PDF
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type Product specification 2SC3098 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NF=2.5dB,\|S21e\|2=14.5dB f=500MHz 0.55 Low Noise Figure +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter	Original	2SC3098 OT-23 500MHz) 500MHz	PDF

S21E Search Results

S21E Price and Stock

Infineon Technologies AG BAS21E6327HTSA1

Advanced Thermal Solutions Inc ATS-21E-95-C2-R0

Advanced Thermal Solutions Inc ATS-21E-25-C2-R0

Advanced Thermal Solutions Inc ATS-21E-50-C2-R0

Advanced Thermal Solutions Inc ATS-21E-51-C2-R0

S21E Datasheets Context Search

Untitled

MT3S111TU

marking mh

MT3S113

UPA831TF

transistor Bf 444

Silicon Bipolar Transistor

2SC5065

ic 741 free

transistor 8730

NJ 25 50 N

2SC4864

CQ 817

Untitled

ir sensor circuit diagram using LM358

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KTC3600U

KTC3770V

A773* Transistor

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