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California Eastern Laboratories (CEL) UPA800T-T1 RF TRANS 2 NPN 10V 8GHZ 6SO
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DigiKey	UPA800T-T1	Cut Tape	6		1	1 $0.72 10 $0.72 100 $0.72 1000 $0.72 10000 $0.72	Buy Now
	UPA800T-T1	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.55075	Buy Now
California Eastern Laboratories (CEL) UPA800T-A RF TRANS 2 NPN 10V 8GHZ SOT363
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DigiKey	UPA800T-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) UPA800T-T1-A RF TRANS 2 NPN 10V 8GHZ SOT363
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DigiKey	UPA800T-T1-A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) UPA800T
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Quest Components	UPA800T		1			1 $6 10 $6 100 $6 1000 $6 10000 $6	Buy Now

UPA800T Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
UPA800T	Unknown	SMD, High Frequency Amplifier, 20V 35mA 110mW, Silicon NPN Transistor (integrated circuit)	Original	PDF
UPA800T	NEC	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD	Original	PDF
UPA800T-A	California Eastern Laboratories	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN HF 8GHZ SOT363	Original	PDF
UPA800TF	NEC	NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
UPA800TF	NEC	6-pin small MM high frequency double transistor array	Original	PDF
uPA800TKB-T1	NEC	High-frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Mini Mold	Original	PDF
UPA800T-T1	California Eastern Laboratories	RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN HF FT=8GHZ SOT-363	Original	PDF
UPA800T-T1	NEC	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD	Original	PDF
uPA800T-T1	NEC	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI	Original	PDF
UPA800T-T1-A	California Eastern Laboratories	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN HF FT=8GHZ SOT363	Original	PDF
UPA800T-T1-A	California Eastern Laboratories	NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
UPA800T-T1B	NEC	6-pin small MM high frequency double transistor array	Original	PDF

UPA800T Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor 8730 Abstract: UPA800T NPN Transistor 8440 NE680 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: \|S21E\|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT	Original	UPA800T NE680 UPA800T 24-Hour transistor 8730 NPN Transistor 8440 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240	PDF
NF NPN Silicon Power transistor TO-3 Abstract: UPA800T bjt microwave 15 GHz npn bjt microwave GHz transistor mje 350 NE680 S21E UPA800T-T1 97 transistor Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: \|S21E\|2 = 7.5 dB TYP at 2 GHz	Original	UPA800T NE680 UPA800T 24-Hour NF NPN Silicon Power transistor TO-3 bjt microwave 15 GHz npn bjt microwave GHz transistor mje 350 S21E UPA800T-T1 97 transistor	PDF
transistor 1249 Abstract: UPA800T 1788 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA800T UPA800T NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1, Q2 Parameters Q1, Q2 IS BF 3.84e-16 MJC 0.5 124.9 XCJC NF 1.04 CJS VAF 11.87 VJS 0.75 IKF 0.027 MJS ISE 1e-14 FC 0.5 10e-12 NE 2.17 TF BR	Original	UPA800T UPA800T 84e-16 1e-14 01e-4 358e-12 21e-12 10e-12 635e-9 24-Hour transistor 1249 1788	PDF
transistor k 4110 Abstract: mje 3007 UPA800T 3019 Transistor BJT 5240 Text: SILICON TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • UPA800T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz	Original	NE680 UPA800T UPA800T 24-Hour transistor k 4110 mje 3007 3019 Transistor BJT 5240	PDF
California Eastern Laboratories OR NEC Abstract: S21E UPA800TF NE680 SILICON HIGH POWER bipolar npn TRANSISTOR Bipolar Junction Transistor npn Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA800TF OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: SOT-363 package measures just 2.0 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE PACKAGE OUTLINE TS06	Original	UPA800TF OT-363 UPA800TF NE680 UPA800TF-T1, 24-Hour California Eastern Laboratories OR NEC S21E SILICON HIGH POWER bipolar npn TRANSISTOR Bipolar Junction Transistor npn	PDF
TRANSISTOR C 6090 npn Abstract: ic 7407 PT 3195 rf power transistor UPA800T nec K 3570 NEC 5623 UPA800T-T1-A LB 11910 NE680 Mje 1533 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: \|S21E\|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT	Original	UPA800T NE680 UPA800T TRANSISTOR C 6090 npn ic 7407 PT 3195 rf power transistor nec K 3570 NEC 5623 UPA800T-T1-A LB 11910 Mje 1533	PDF
UPA801T Abstract: UPA800T UPA802T upa801 UPA814T UPA806T UPA807T UPA808T UPA809T UPA810T Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. S06 2.1±0.1 1.25±0.1 2.0±0.2 RL 0.65 1 1.3 0.65 2 3 6 0.2 +0.1 -0 5 4 DOT ON BACK SIDE 0.9 ± 0.1 0.7 0 ~0.1 PART MARKING NUMBER UPA800T	Original	UPA800T UPA809T UPA801T UPA810T UPA802T UPA811T UPA806T UPA812T UPA807T UPA814T UPA801T UPA800T UPA802T upa801 UPA814T UPA806T UPA807T UPA808T UPA809T UPA810T	PDF
cascode transistor array VCO Abstract: UPA807T RF transistors with s-parameters UPA802T cascode transistor array AN1028 S21E UPA806T UPA808T transistor RF S-parameters Text: California Eastern Laboratories APPLICATION NOTE AN1028 Testing Dual-Chip Transistor Arrays for VCO/Buffer Amp Combinations and Two-Stage Amplifier Applications I. Introduction Designers of handheld wireless products share common goals: higher performance, smaller size, and lower costs. Usually	Original	AN1028 UPA808T cascode transistor array VCO UPA807T RF transistors with s-parameters UPA802T cascode transistor array AN1028 S21E UPA806T transistor RF S-parameters	PDF
FET marking code g5d Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic	PDF
nec mosfet marked v75 Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77	PDF
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original		PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
SMD M05 sot23 Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly	Original	2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404	PDF
ne3511s02 s2p Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan	Original	07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N	PDF

nec b1007 Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,	Original	NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G	PDF
BGT24MTR11 Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586 Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters	Original	24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586	PDF
UPA802T Abstract: BD304 NE02132 Text: Low Noise Bipolar Transistors ' •TV#’ VCE V S x n l* Ic TYP (mA) (dB) * VIP Hn te TYP MAX (WAJ Package Pfcg. Faxon Dwnand ücloaning Dee No. DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 3 .5 7.5 8.0 120 35 (SOT-363) S06 D MEVO UPA801T 2.0 3 7 1.2 -	OCR Scan	UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T OT-363) BD304 NE02132	PDF
UPA800T Abstract: NPN silicon high frequency transistor NF NPN Silicon Power transistor TO-3 Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 (Top View) 2 N E680 Die in a 2 mm x 1.25 m m package LOW NOISE FIGURE: 2.1 ± 0.1 NF = 1.9 dB T Y P at 2 G Hz	OCR Scan	UPA800T UPA800T 24-Hour NPN silicon high frequency transistor NF NPN Silicon Power transistor TO-3	PDF
ls 7413 n Abstract: V 8623 transistor UPA800T HA 4016 13.562 mje 3007 BJT 5240 nec k 3115 NEC k 3115 transistor Text: UPA800T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 (Top View) 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: • HIGH GAIN: • EXCELLENT LOW VOLTAGE, LOW CURRENT	OCR Scan	NE680 UPA800T UPA800T 24-Hour ls 7413 n V 8623 transistor HA 4016 13.562 mje 3007 BJT 5240 nec k 3115 NEC k 3115 transistor	PDF
3187 transistor Abstract: UPA800T Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA800T PRELIMINARY FEATURES • OUTLINE DIMENSIONS U nits in m m SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: \|S 21 E\|2 = 7.5 dB TYP at 2 GHz	OCR Scan	UPA800T NE680 UPA800T 3187 transistor	PDF
transistor NEC D 587 Abstract: de 535 Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA800T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 800T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAW INGS	OCR Scan	UPA800T 2SC4228) uPA800T transistor NEC D 587 de 535	PDF
UPA827TF Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363 Text: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T	OCR Scan	UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA827TF UPA833TF UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363	PDF
upa dual transistor Abstract: No abstract text available Text: NPN SILICON HIGH FREQUENCY TRANSISTOR U P A q00T PRELIMINARY FEATURES OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz HIGH GAIN: \|S21 E\|2 = 7.5 dB TYP at 2 GHz	OCR Scan	NE680 UPA800T UPA800T-T1, bM27525 00b5771 upa dual transistor	PDF
transistor mje 350 Abstract: UPA800T 40164 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPMQQj OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: N F = 1.9 dB TYP at 2 GHz • HIGH GAIN: IS2 1EI2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT	OCR Scan	NE680 UPA800T 84e-16 1e-14 358e-12 162e-12 7e-12 635e-9 UPA800T transistor mje 350 40164	PDF

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UPA800T Search Results

UPA800T Price and Stock

California Eastern Laboratories (CEL) UPA800T-T1

California Eastern Laboratories (CEL) UPA800T-A

California Eastern Laboratories (CEL) UPA800T-T1-A

California Eastern Laboratories (CEL) UPA800T

UPA800T Datasheets (12)

UPA800T Datasheets Context Search

transistor 8730

NF NPN Silicon Power transistor TO-3

transistor 1249

transistor k 4110

California Eastern Laboratories OR NEC

TRANSISTOR C 6090 npn

UPA801T

cascode transistor array VCO

FET marking code g5d

nec mosfet marked v75

2SK2500

schematic diagram atx Power supply 500w

SMD M05 sot23

ne3511s02 s2p

nec b1007

BGT24MTR11

UPA802T

UPA800T

ls 7413 n

3187 transistor

transistor NEC D 587

UPA827TF

upa dual transistor

transistor mje 350