marking M5N
Abstract: MA3XD15 M5-N
Text: Diodes SMD Type Schottky Barrier Diodes MA3XD15 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Mini type 3-pin package Low VF or Low IR type: VF < 0.45 V, IR < 100 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A +0.05 0.1-0.01 0-0.1
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MA3XD15
OT-23
marking M5N
MA3XD15
M5-N
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FMMD6050
Abstract: FMMD7000 partmarking 5 C DSA003690
Text: SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE FMMD6050 ISSUE 2 - OCTOBER 1995 DIODE PIN CONNECTION PARTMARKING DETAIL 5A 2 1 3 ! SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Breakdown Voltage Voltage IR=100µ A V(BR) 70 V Peak Forward Current
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FMMD6050
100mA
FMMD7000
FMMD6050
partmarking 5 C
DSA003690
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PT7620
Abstract: neophotonics SFP NeoPhotonics IC 2 5/PT7620-41-2W G957 G958 IEC825 PT7620-61-2w InGaAs array 1550nm
Text: www.neophotonics.com VER C/ 111908 PT7620-61-2W + OC-48 IR-2 / STM S-16.2 SFP Transceiver 1. Features 1.1. Transceiver unit with independent 1550nm DFB Laser diode transmitter InGaAs PIN photodiode receiver 1.2. Compliant with SFP MSA and SFF-8472 with duplex LC receptacle
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PT7620-61-2W(
OC-48
1550nm
SFF-8472
100Mb/s
67Gb/s
PT7620-61-2W
PT7620-61-2W+
PT7620
neophotonics
SFP NeoPhotonics
IC 2 5/PT7620-41-2W
G957
G958
IEC825
PT7620-61-2w
InGaAs array 1550nm
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MA27D270G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA27D270G Silicon epitaxial planar type For super high speed switching • Package ■ Features • Code SSSMini2-F3 • Pin Name 1: Anode 2: Cathode • Small reverse current IR
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2002/95/EC)
MA27D270G
MA27D270G
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PT7320
Abstract: PT7320-42-1W PT7320-41-1W PT7320-41 neophotonics SFP NeoPhotonics G958 IEC825 1w laser driver MQW Laser diode SFP
Text: www.neophotonics.com VER A/ 102307 PT7320-41 2 -1W OC-12 SR/IR-1 / STM S-4.1 SFP Transceiver 1 Features 1.1 Transceiver unit with independent 1310nm MQW FP Laser diode transmitter InGaAs PIN photodiode receiver 1.2 Compliant with SFP MSA and SFF-8472 with duplex LC receptacle
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PT7320-41
OC-12
1310nm
SFF-8472
100Mb/s
700Mb/s
PT7320-41-1W
PT7320
PT7320-42-1W
PT7320-41-1W
neophotonics
SFP NeoPhotonics
G958
IEC825
1w laser driver
MQW Laser diode SFP
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Untitled
Abstract: No abstract text available
Text: PGR 203 01 Optical Receiver Submodule for 2.5 Gbps DATA FIBER PIN PREAMP Key Features • • • • • • Applications • SDH STM-16 SH • SONET OC-48 IR • Digital receivers to 2.5 Gbps • Analog receivers to 1.7 GHz 56 Pin connection 1. GND 2. Vpin +5V
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STM-16
OC-48
1522-PGR
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DA2J101
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DA2J101 Silicon epitaxial planar type For high speed switching circuits • Features Package Packaging Code SMini2-F5-B Pin Name 1: Cathode 2: Anode Small reverse current IR
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DA2J101
DA2J101
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Untitled
Abstract: No abstract text available
Text: 155 Mbps Singlemode SFF LC Transceiver IR and LR C-13-155-F-SLCXA Features • Duplex LC Singlemode Transceiver • Small Form Factor Multi-sourced 2 x 5 Pin Package • Intermediate and Long reach SONET OC-3/ SDH STM-1 Compliant • Single +3.3 V Power Supply
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C-13-155-F-SLCXA
MIL-STD-883,
UL94V0
TA-NWT-000983
LUMNDS106-0502
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SBE001
Abstract: SB20015M SS2003M SS3003CH ec2d02b SB007-W03C SB10015M SBS004M ss200 SS10015M
Text: Schottky Barrier Diodes Shortform Table Surfacemount Type Package Series CONTENTS •Packages ■Quick selection guide ■Recommendation circuit diagram ■Lineup according to packages ・ECSP1006-2 ・ECSP1008-2 ・ECSP1608-4 ・SSFP ・SCH6 ・SMCP ・MCP
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ECSP1006-2
ECSP1008-2
ECSP1608-4
SB30W03T
SB40W03T
SB10W05T
SB25W05T
SBE001
SB20015M
SS2003M
SS3003CH
ec2d02b
SB007-W03C
SB10015M
SBS004M
ss200
SS10015M
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SB01
Abstract: SB05 SB20 SB30 SB40 SB02W03S S09A S02 sanyo
Text: Schottky Barrier Diodes Shortform Table Lead Type Package Series CONTENTS •Packages ■Quick selection guide ■Recommendation circuit diagram ■Lineup according to packages ・TP ・SPA ・NP ・MP ・NMP ・TO-126 ・FLP 2 3 4 5 6 7 7 8 9 10 Mar.2008
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O-126
O-126ML
SB30-03Z
SB20-05Z
SB30W03Z
SB01
SB05
SB20
SB30
SB40
SB02W03S
S09A
S02 sanyo
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VISHAY SOT23 DATE CODE
Abstract: Diode marking L25
Text: GL05T to GL24T www.vishay.com Vishay Semiconductors Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces FEATURES • IEC 61000-4-5 lightning see IPPM below 3 • ESD-protection acc. IEC 61000-4-2 ± 8 kV contact discharge ± 15 kV air discharge
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GL05T
GL24T
OT-23
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VISHAY SOT23 DATE CODE
Diode marking L25
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Untitled
Abstract: No abstract text available
Text: VESD05A8B-HNH Vishay Semiconductors 8-Line ESD-Protection Diode Array in LLP1713-9L Features • • • • • • Ultra compact LLP1713-9L package Low package profile < 0.6 mm 8-line ESD-protection Low leakage current IR < 0.5 µA Low load capacitance CD = 20 pF
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VESD05A8B-HNH
LLP1713-9L
LLP1713-9L
2002/95/EC
2002/96/EC
VESD05A8B-HNH-GS08
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: VESD05A8A-HNH Vishay Semiconductors 8-Line ESD-Protection Diode Array in LLP1713-9L Features • • • • • • Ultra compact LLP1713-9L package Low package profile < 0.6 mm 8-line ESD-protection Low leakage current IR < 1 µA Low load capacitance CD = 30 pF
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VESD05A8A-HNH
LLP1713-9L
LLP1713-9L
2002/95/EC
2002/96/EC
VESD05A8A-HNH-GS08
18-Jul-08
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SM05-02HTG
Abstract: No abstract text available
Text: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SM05 through SM36 SM Series 400W TVS Diode Array RoHS Pb GREEN Description The SM series can absorb repetitive ESD strikes above the maximum level specified in the IEC61000-4-2 international
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IEC61000-4-2
8/20us
IEC61000-4-5)
IEC61000-4-2,
IEC61000-4-4,
5/50ns)
IEC61000-4-5,
AEC-Q101
180mm
SM05-02HTG
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LLP1713-9L
Abstract: VESD05A8B-HNH-GS08 MARKING E4 "Pin Diode"
Text: VESD05A8B-HNH Vishay Semiconductors 8-Line ESD-Protection Diode Array in LLP1713-9L Features • • • • • • Ultra compact LLP1713-9L package Low package profile < 0.6 mm 8-line ESD-protection Low leakage current IR < 0.5 µA Low load capacitance CD = 20 pF
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VESD05A8B-HNH
LLP1713-9L
LLP1713-9L
2002/95/EC
2002/96/EC
11-Mar-11
VESD05A8B-HNH-GS08
MARKING E4 "Pin Diode"
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VESD05A8A-HNH-GS08
Abstract: VESD05A8A-HNH marking u4 diode LLP1713 LLP1713-9L marking code diode u4
Text: VESD05A8A-HNH Vishay Semiconductors 8-line ESD Protection Diode Array in LLP1713-9L Features • • • • • • Ultra compact LLP1713-9L package Low package profile < 0.6 mm e3 8-Line ESD protection Low leakage current IR < 1 µA Low load capacitance CD = 30 pF
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VESD05A8A-HNH
LLP1713-9L
LLP1713-9L
2002/95/EC
2002/96/EC
08-Apr-05
VESD05A8A-HNH-GS08
VESD05A8A-HNH
marking u4 diode
LLP1713
marking code diode u4
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Untitled
Abstract: No abstract text available
Text: IR M3401/3402/3405 SIEMENS INFRARED DATA TRANSCEIVER Prelim inary IR M 3401/3402 Pin Functions Pin no. Function Pin no. Function Pin no. Function 1 LED Anode 4 Receive 7 N/C 2 LED Cathode 5 SD/MS 8 GND 3 Transm it 6 VCC IRM3405 Pin Functions IRM3401 Pin no.
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M3401/3402/3405
IRM3405
IRM3401
IRM3405
A23b32b
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DTC123JK
Abstract: DTA123JK DTC144EK FMA10A Diode T148 T1483 two 2sc2412k 80V UMC4 DTA143XK UMA10
Text: T Ô E Ô 'm Digital Transistors 0DD73Ô3 43b IR H H Two transistors with built-in resistors digital transistors are packed into UM5 and FMT type Being wired internally they require minimum space. UM5 * FMT (5 pin type including 2 circuits] •Built-in 2 resistors
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0DD73Ã
DTA124EKX2
DTA144EKX2
DTA123JK
DTA143Xas
DTC123JK
DTC144EK
FMA10A
Diode T148
T1483
two 2sc2412k 80V
UMC4
DTA143XK
UMA10
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ADC-00401
Abstract: ADC-00402 ADC85 ADC87 ILC Data Device
Text: 000 A D C -00401 AND A D C -00402 ILC DATA DEVICE CORPORATION 12 BIT 2 //SEC HYBRID A/D CONVERTER Low cost, high speed,standard pin out » ir a .«tessà^ s-i FEATURES • 2 tiSEC CONVERSION TIME • DESCRIPTION APPLICATIONS The A D C -00401 is a 12 b it 2 m icro
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ADC-00401
ADC-00402
ADC87
ADC85
MIL-STD-202E,
C-4/86
ADC-00402
ILC Data Device
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Untitled
Abstract: No abstract text available
Text: mk C ir c u it D e s c r ip t io n Pin Descriptions Pin Name I/O CVBS/B 2 Composite video with blanking and sync, or Blue. CVBS/G 4 Composite video with blanking and sync, or Green. C/R o 6 Modulated chrominance, or Red. y/cvBs 8 Luminance with blanking, sync, and, optionally, Macrovision pulses,
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Bt856/7
lb455R
68-Pin
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Untitled
Abstract: No abstract text available
Text: Diodes # AM A5Z Series S Mini 2 Pin Type (D3 Ir max. Vr (M ) (V) MA5Z200 1 160 MA5Z220 1 176 MA5Z240 1 192 MA52270 1 MA5Z300 MA5Z330 Type No. ★Under development Zener Diodes V z Sz typ. (m V /t) min. (V) typ. (V) max. (V) 0.1 190 200 220 0.1 210 220 240
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MA5Z200
MA5Z220
MA5Z240
MA52270
MA5Z300
MA5Z330
4S713*
MA714
MA718Ã
MA6S718
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D83 ZENER
Abstract: zener d83 ma5z270 ma741 D83 004 MA776 MA6Z100WA MA6Z DIL 330 ma5z220
Text: Diodes # AM A5Z Series S Mini 2 Pin Type (D3 MA5Z200 Ir max. (M ) 1 160 MA5Z220 1 176 MA5Z240 1 192 MA52270 1 216 MA5Z300 1 MA5Z330 1 Type No. Zener Diodes V z min. typ. (V) (V) Sz typ. (m V /t) Vr max. (V) lz lz (mA) (mA) 0.31 0.1 0.1 190 200 220 0.31
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MA5Z200
MA5Z220
MA5Z240
MA52270
MA5Z300
MA5Z330
MA6Z100WA
MA6Z100WK
MA700/A
MA704/A
D83 ZENER
zener d83
ma5z270
ma741
D83 004
MA776
MA6Z100WA
MA6Z
DIL 330
ma5z220
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APD0520-000
Abstract: No abstract text available
Text: GaAsRFICs and Modules Silicon PIN Diodes I Region Oim Nom. Voltage Rating IR -1 0 nA V) Min. C j V R - 50 V Rs @ 10 mA 1 MHz (pF) Max. Max. Tl (ns) Typ. (ß) Chip Part Number 50 0.05 2 30 ♦ APD0505-000 5 50 0.1 1.5 60 ♦ APD0510-000 5 50 0.2 1 80 ♦ APD0520-000
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APD0505-000
APD0510-000
APD0520-000
APD0805-000
APD0810-000
APD0820-000
APD1505-000
APD1510-000
APD1520-000
APD2220-000
APD0520-000
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Untitled
Abstract: No abstract text available
Text: DATA SHEET OCMOS FET P S 7 2 2 1 - 2 A 8 PIN SOP OCMOS EFT 2-ch OCMOS FET DESCRIPTION T h e P S 7 2 2 1 -2 A is solid state relays con tain ing G aA s LE D s on th e em ittin g side (in pu t side) and M O S FETs on th e ou tput side. T h e y are su ita b le for analog sig na l control be cau se of th e ir low offset and high linearity.
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